Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first base layer, a second base layer, a first terminal positioned between the first base layer and the second base layer, a second terminal, and a third terminal. The first base layer, the second base layer, and the first terminal are positioned between the second terminal and the third terminal. For example, the first terminal may be positioned in a vertical direction between the first and second base layers.

Abstract: Embodiments of the disclosure provide a bipolar transistor structure on a semiconductor fin. The semiconductor fin may be on a substrate and may have a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. The semiconductor fin includes a first portion and a second portion adjacent the first portion along the length of the semiconductor fin. The second portion is coupled to a base contact. A dopant concentration of the first portion is less than a dopant concentration of the second portion. An emitter/collector (E/C) material is adjacent the first portion along the width of the semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

Abstract: A gate cut isolation including an air gap and an IC including the same are disclosed. A method of forming the gate cut isolation may include forming an opening in a dummy gate that extends over a plurality of spaced active regions, the opening positioned between and spaced from a pair of active regions. The opening is filled with a fill material, and the dummy gate is removed. A metal gate is formed in a space vacated by the dummy gate on each side of the fill material, and the fill material is removed to form a preliminary gate cut opening. A liner is deposited in the preliminary gate cut opening, creating a gate cut isolation opening, which is then sealed by depositing a sealing layer. The sealing layer closes an upper end of the gate cut isolation opening and forms the gate cut isolation including an air gap.

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer having a top surface and a side surface, a second terminal having a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The structure further includes a contact positioned to overlap with the top surface and the side surface of the first raised semiconductor layer.

Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a collector having a first semiconductor layer, an emitter having a second semiconductor layer, an intrinsic base including nanosheet channel layers positioned with a spaced arrangement in a layer stack, and a base contact laterally positioned between the first and second semiconductor layers. Each nanosheet channel layer extends laterally from the first semiconductor layer to the second semiconductor layer. Sections of the base contact are respectively positioned in spaces between the nanosheet channel layers. The structure further includes first spacers laterally positioned between the sections of the base contact and the first semiconductor layer, and second spacers laterally positioned between the sections of the base contact and the second semiconductor layer.

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor with a base layer of varying horizontal thickness, and related methods to form the same. A lateral bipolar transistor may include an emitter/collector (E/C) layer on a semiconductor layer. A first base layer is on the semiconductor layer and horizontally adjacent the E/C layer. The first base layer has a lower portion having a first horizontal width from the E/C layer. The first base layer also has an upper portion on the lower portion, with a second horizontal width from the E/C layer greater than the first horizontal width. A second base layer is on the first base layer and adjacent a spacer. The upper portion of the first base layer separates a lower surface of the second base layer from the E/C layer.

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

Abstract: The disclosure provides a lateral bipolar transistor structure with a base layer over a semiconductor buffer, and related methods. A lateral bipolar transistor structure may include an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A semiconductor buffer is adjacent the insulator. A base layer is on the semiconductor buffer and adjacent the E/C layer, the base layer including a lower surface below the E/C layer and an upper surface above the E/C layer. The base layer has a second doping type opposite the first doping type.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.

Abstract: In a disclosed semiconductor structure, a lateral bipolar junction transistor (BJT) has a base positioned laterally between a collector and an emitter. The base includes a semiconductor fin with a first portion that extends from a substrate through an isolation layer, a second portion on the first portion, and a third portion on the second portion. The collector and emitter are on the isolation layer and positioned laterally immediately adjacent to opposing sidewalls of the second portion of the semiconductor fin. In some embodiments, the BJT is a standard BJT where the semiconductor fin (i.e., the base), the collector, and the emitter are made of the same semiconductor material. In other embodiments, the BJT is a heterojunction bipolar transistor (HBT) where a section of the semiconductor fin (i.e., the base) is made of a different semiconductor material for improved performance. Also disclosed is a method of forming the structure.

Abstract: Systems and processes for operating a digital assistant are provided. An example process for performing a task includes, at an electronic device having one or more processors and memory, receiving a spoken input including a request, receiving an image input including a plurality of objects, selecting a reference resolution module of a plurality of reference resolution modules based on the request and the image input, determining, with the selected reference resolution module, whether the request references a first object of the plurality of objects based on at least the spoken input, and in accordance with a determination that the request references the first object of the plurality of objects, determining a response to the request including information about the first object.

Abstract: A system includes a sensor network comprising at least two optical fibers coupled to a pavement. Each optical fiber includes one or more optical sensors installed a predetermined distance from one or more adjacent optical fibers. The one or more optical sensors are configured to produce a wavelength shift signal. A processor is configured to determine one or both of one or more attributes of one or more objects travelling on the pavement and a traffic condition of the pavement based on the wavelength shift signal. A transmitter is configured to transmit the one or more attributes to a predetermined location.

Abstract: One or more spacers for installing an optical cable are disposed in a trench that extends along an axis. The optical cable includes one or more optical sensors. Each spacer includes a base configured to rest in a bottom of the trench. A first arm extends from the base. The first arm is adjacent to a first wall of the trench. An opposing second arm extends from the base. The second arm is adjacent to an opposing second wall of the trench. The optical cable is configured to extend along the axis.

Abstract: A germ-repellent paper product contains a paper substrate and a germ-repellent overprint varnish. The germ-repellent overprint varnish contains a varnish and a germ-repellent agent. The germ-repellent overprint varnish is coated onto the paper substrate to form a germ-repellent paper product. A method for manufacturing such a germ-repellent paper product is also provided.

Abstract: A monitoring system includes an array of optical sensors disposed within a transformer tank. Each optical sensor is configured to have an optical output that changes in response to a temperature within the transformer tank. An analyzer is coupled to the array of optical sensors. The analyzer is configured to determine a sensed temperature distribution based on the sensed temperature. The sensed temperature distribution is compared to an expected distribution. Exterior contamination of the transformer tank is detected based on the comparison.

Abstract: The present disclosure discloses an operation management method for a network device without address information, which includes: recognizing an address of a front-end terminal; constructing a standard UDP/TCP data packet according to the address and session state information; and sending the standard UDP/TCP data packet. In another aspect, a network device without address information is claimed, which includes: a recognizing module configured to recognize an address of a front-end terminal; a data packet generating module configured to construct a standard UDP/TCP data packet according to the address and session state information; and a sending module configured to send the standard UDP/TCP data packet. The method and device described above can reduce the workload of network renovation while minimizing renovation costs, thereby maximizing cost effectiveness. Thus, any technical breakthrough in this direction is regarded as the direction of development.

Abstract: An ultrasonic atomization type electronic cigarette includes an ultrasonic atomizer having an ultrasonic atomization sheet, an electronic cigarette housing, an upper cover assembly, and a locking structure. The angle ? between the ultrasonic atomization sheet and the central axis of the electronic cigarette is 5° to 85°, preferably 15° to 55°. The housing is provided with an air inlet groove. A first support in the housing includes a receiving cavity for receiving the ultrasonic atomizer. The upper cover assembly may be used for opening the receiving cavity, and the locking structure may be used for locking the upper cover assembly. A liquid guide structure in the atomizer may include a liquid guide body in which a side of a first liquid guide layer is sandwiched between a side of a second liquid guide layer and an ultrasonic atomization surface.

Abstract: An ultrasonic electronic cigarette atomizing core and atomizer is provided, the atomizing core including an atomizing core sleeve, and tobacco tar guide cotton and an atomizing piece in the atomizing core sleeve.

Abstract: Extrinsic calibration of a Light Detection and Ranging (LiDAR) sensor and a camera can comprise constructing a first plurality of reconstructed calibration targets in a three-dimensional space based on physical calibration targets detected from input from the LiDAR and a second plurality of reconstructed calibration targets in the three-dimensional space based on physical calibration targets detected from input from the camera. Reconstructed calibration targets in the first and second plurality of reconstructed calibration targets can be matched and a six-degree of freedom rigid body transformation of the LiDAR and camera can be computed based on the matched reconstructed calibration targets. A projection of the LiDAR to the camera can be computed based on the computed six-degree of freedom rigid body transformation.

Abstract: A burn-in chamber is provided, configured to provide the required temperature for a device under test (DUT), including a side wall, a guiding plate, an air flow plate, a partition assembly, and a fan. The air flow plate has a ventilation structure, and the guiding plate is located between the side wall and the air flow plate. The partition assembly is disposed on both sides of the air flow plate. The partition assembly and the air flow plate together form an accommodating space for accommodating the DUT. The partition assembly forms a return channel with respect to the other side of the accommodating space with the side wall. When the fan is active, air from the accommodating space passes through the air flow plate and is guided to the return channel via the guiding plate, and air is returned to the accommodating space through the return channel.