Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with an emitter/collector (E/C) contact to a doped semiconductor well and related methods. A bipolar transistor structure according to the disclosure may include a doped semiconductor well over a semiconductor substrate. An insulative region is on the doped semiconductor well. A base layer is on the insulative region, and an emitter/collector (E/C) layer on the insulative region and adjacent a first sidewall of the base layer. An E/C contact to the doped semiconductor well includes a lower portion adjacent the insulative region and an upper portion adjacent and electrically coupled to the E/C layer.

Abstract: An ultrasonic liquid electronic cigarette atomizer and an ultrasonic liquid electronic cigarette are disclosed. The ultrasonic liquid electronic cigarette atomizer comprises an atomization core, a suction nozzle and an air outlet tube. A bottom end of the air outlet tube is communicated with an atomization chamber of the atomization core. A top end of the air outlet tube is communicated with the suction nozzle. The top end of the air outlet tube is communicated with a bottom end of the suction nozzle through a liquid blocking chamber, and the diameter of a top end of the liquid blocking chamber is greater than the diameter of the bottom end of the suction nozzle. The atomizer further comprises a connecting seat between the liquid blocking chamber and the suction nozzle.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to single fin structures and methods of manufacture. The structure includes: an active single fin structure; a plurality of dummy fin structures on opposing sides of the active single fin structure; source and drain regions formed on the active single fin structure and the dummy fin structures; recessed shallow trench isolation (STI) regions between the dummy fin structures and the active single fin structure and below a surface of the dummy fin structures; and contacts formed on the source and drain regions of the active single fin structure with a spacing of at least two dummy fin structures on opposing sides of the contacts.

Abstract: Embodiments of the disclosure provide a bipolar transistor structure including a semiconductor fin on a substrate. The semiconductor fin has a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. A first emitter/collector (E/C) material is adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin. The first E/C material has a second doping type opposite the first doping type. A second E/C material is adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin. The second E/C material has the second doping type. A width of the first E/C material is different from a width of the second E/C material.

Abstract: A set of load responses of an asset for a sample of traffic loading events caused by objects of unknown weight is measured. At least one statistical parameter is determined from the set of load responses. A corresponding statistical parameter of known object weights loading the asset is determined. An object weight is assigned to a load response of the set of load responses based on correlation of the extracted statistical parameter to the corresponding statistical parameter.

Abstract: An ultrasonic electronic cigarette atomizer are disclosed. The atomizer includes an ultrasonic atomization sheet (1), an atomization cotton (3), a liquid chamber (2), an air inlet tube (6), an air outlet channel (7), and a suction nozzle (8). The atomization cotton (3) is communicated with the liquid chamber (2) and is in contact with an atomization surface of the ultrasonic atomization sheet (1). An inlet of the air inlet tube (6) is communicated with the outside. The air inlet tube (6), an atomization region of the ultrasonic atomization sheet (1), the air outlet channel (7), and the suction nozzle (8) are communicated in sequence. An outlet of the air inlet tube (6) is opposite to the atomization region of the ultrasonic atomization sheet (1).

Abstract: A structure is provided, the structure comprising a substrate and a first silicon germanium fin over the substrate. A first silicon germanium layer may be arranged in the substrate, whereby the first silicon germanium layer may be coupled to the first silicon germanium fin. A second silicon germanium layer may be arranged in the substrate, whereby the second silicon germanium layer may be coupled to the first silicon germanium fin.

Abstract: Disclosed are a semiconductor structure and method of forming the structure. The structure includes a field effect transistor (FET) with a channel region between source/drain regions that extend through a semiconductor layer and into an insulator layer, that include a first portion in the insulator layer, and a second portion on the first portion in the semiconductor layer and, optionally, extending above the semiconductor layer. The first portion is relatively wide, includes a shallow section below the second portion, and a deep section adjacent to the channel region and overlayed by the semiconductor layer. The uniquely shaped first portion boosts saturation current to be boosted to allow the height of the second portion to be reduced to minimize overlap capacitance. Optionally, each source/drain region includes multiple semiconductor materials including a stress-inducing semiconductor material grown laterally from the semiconductor layer to improve charge carrier mobility in the channel region.

Abstract: The invention provides a vapor chamber element (1000), wherein the vapor chamber element (1000) comprises a first plate (110) and a second plate (120) with a chamber (100) in between, wherein the chamber (100) has a first height (H1), wherein the vapor chamber element (1000) further comprises bridging elements (150) bridging at least part of the first height (H1), wherein the vapor chamber element (1000) comprises a plurality of sections (130) configured along a first axis (A), wherein the plurality of sections 130) comprises (i) a bending section (131) having a first volume fraction V1 of bridging elements (150), and (ii) a basic section (133) having a second volume fraction V2 of bridging elements (150), wherein 2?V1/V2.

Abstract: The invention provides a vapor chamber element (1000) comprising a first part (1100), a second part (1200), and a third part (1300), wherein the second part (1200) and third part (1300) are associated to the first part (1100), wherein the second part (1200) and third part (1300) are configured spatially separated with a first distance (d1) along a first length (L1), defining an opening (200) between the second part (1200) and the third part (1300); wherein the vapor chamber element (1000) comprises one or more vapor chambers (100) at least partially comprised by the second part (1200) and third part (1300); wherein the vapor chamber element (1000) further comprises one or more heat fin elements (2000), wherein the one or more heat fin elements (2000) comprise one or more heat fins (2100), wherein the one or more heat fin elements (2000) bridge the first distance (d1) and close a part of the opening (200).

Abstract: A light generating device (100) comprising a plurality of solid state light sources (10) and a housing (120) comprising side wall elements (20). The light sources (10) are enclosed by the side wall elements (20), and the light generating device (100) generates >=90% of light source light (11) within a triangular prism having a top angle (?)<=180°. The side wall elements (20): —each have a first side (21) directed inwards facing the light sources (10) and a second side (22) which is directed outwards and is reflective for visible light;—are configured at both sides of a housing plane (110), under an angle (?1) between 0-45° relative to the housing plane (110);—have a projection with height H1 on the housing plane (110)—define a largest width (W1) of the light housing 120), wherein H1/W1>1.

Abstract: A compressor for an aircraft engine. A rotor includes blades rotatable about an axis. Blade tips extend between leading and trailing edges. A shroud surrounds the rotor, with an inner surface surrounding the tips. Grooves are defined in the shroud inner surface adjacent the tips. The grooves extend circumferentially about the shroud and radially from inlet openings to closed end surfaces. Groove sidewalls extend circumferentially about the axis. The grooves are axially spaced-apart, the most upstream inlet opening having an upstream end disposed upstream of the leading edges of the blades. The grooves have a swept angle from the inner surface, with a center of the inlet openings is axially offset of a center of the closed-end surfaces. The grooves span an overall axial distance corresponding to 30% or more of the blades’ chord length. The grooves have circumferential interruptions defined by baffles, and extend non-continuously around a shroud circumference.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a collector contact and methods of manufacture. The structure includes: a lateral bipolar transistor which includes an emitter, a base and a collector; an emitter contact to the emitter; a base contact to the base; and a collector contact to the collector and extending to an underlying substrate underneath the collector.

Abstract: Disclosed are an inclined ultrasonic atomizing sheet structure, an atomizer and an electronic cigarette. The inclined ultrasonic atomizing sheet structure comprises atomization cotton and an ultrasonic atomizing sheet. The ultrasonic atomizing sheet is obliquely arranged relative to the horizontal plane, and two ends of the atomization cotton are used for connecting to tobacco tar in a tobacco tar cavity via tobacco tar guide cotton, or the two ends of the atomization cotton are directly arranged in the tobacco tar cavity. A lower surface of the atomization cotton is in contact with an atomization surface of the ultrasonic atomizing sheet. The ultrasonic atomizing sheet structure can prevent the ultrasonic atomizing sheet from being soaked in the tobacco tar and thus prevent the situation that smoke cannot be produced by atomization.

Abstract: The invention provides a photoreactor assembly (1) comprising a reactor (30), wherein the reactor (30) is configured for hosting a fluid (100) to be treated with light source radiation (11) selected from one or more of UV radiation, visible radiation, and IR radiation, wherein the reactor (30) comprises a reactor wall (35) which is transmissive for the light source radiation (11), wherein the photoreactor assembly (1) further comprises: a light source arrangement (1010) comprising a plurality of light sources (10) configured to generate the light source radiation (11), wherein the reactor wall (35) is configured in a radiation receiving relationship with the plurality of light sources (10); one or more fluid transport channels (7) configured in functional contact with one or more of (i) the reactor (30) and (ii) one or more of the plurality of light sources (10); a cooling system (90) configured to transport a cooling fluid (91) through the one or more fluid transport channels (7).

Abstract: The invention provides a reactor assembly (1) comprising a reactor (30), wherein the reactor (30) is configured for hosting a fluid (100) to be treated with light source radiation (11) selected from one or more of UV radiation, visible radiation, and IR radiation, wherein the reactor (30) comprises a reactor wall (35) which is transmissive for the light source radiation (11), wherein: (i) the reactor (30) is a tubular reactor (130), and wherein the reactor wall (35) defines the tubular reactor (130); (ii) the tubular reactor (130) is configured in a tubular arrangement (1130); and (iii) the reactor assembly (1) further comprises a reactor support element (40), wherein (a) the reactor support element (40) encloses at least part of the tubular arrangement (1130) or wherein (b) the tubular arrangement (1130) encloses at least part of the reactor support element (40); wherein part of the tubular arrangement (1130) is configured in contact with the reactor support element (40), and wherein another part of the tubu

Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer, a second terminal having a second raised semiconductor layer, and a base layer positioned laterally between the first raised semiconductor layer and the second raised semiconductor layer. The structure further includes a spacer positioned laterally positioned between the first raised semiconductor layer and the base layer. The spacer includes a dielectric material and an airgap surrounded by the dielectric material.

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a substrate having a well, a first terminal including a first raised semiconductor layer, a second terminal including a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The base layer has an overlapping arrangement with the well. The structure further includes a dielectric layer positioned in a vertical direction between the first terminal and the substrate, the second terminal and the substrate, and the base layer and the substrate.

Abstract: An electronic cigarette, comprising a housing and a suction nozzle, the housing provided with a support. The electronic cigarette further comprises a top cover capable of covering an opening of the housing, the suction nozzle is disposed at the top of the top cover, one end of the top cover is connected to the support through a rotating shaft, a clamping rib is disposed at the bottom of the top cover, and a locking mechanism connected to the clamping rib by locking and an elastic mechanism for opening the top cover when the locking mechanism is separated from the clamping rib are also disposed in the housing; the locking mechanism comprises a key handle, a transmission and a first spring, and one end of the key handle is connected to the transmission.

Abstract: Disclosed is a semiconductor structure including a device, such as a lateral heterojunction bipolar transistor (HBT), made up of a combination of at least three different semiconductor materials with different bandgap sizes for improved performance. In the device, a base layer of the base region can be positioned laterally between a collector layer of a collector region and an emitter layer of an emitter region and can be physically separated therefrom by buffer layers. The base layer can be made of a narrow bandgap semiconductor material, the collector layer and, optionally, the emitter layer can be made of a wide bandgap semiconductor material, and the buffer layers can be made of a semiconductor material with a bandgap between that of the narrow bandgap semiconductor material and the wide bandgap semiconductor material. Also disclosed herein is a method of forming the structure.