Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a first insulating film on the substrate, a lower metal layer in the first insulating film, and a second insulating film on the first insulating film. The lower metal layer may be in the second insulating film, the second insulating film may include a lower surface facing the substrate and an upper surface that is opposite the lower surface, and the upper surface of the second insulating film may be upwardly convex. The semiconductor devices may further include a barrier dielectric film including a recess on the second insulating film, and a via metal layer that is in the recess of the barrier dielectric film and electrically connected with the lower metal layer.

Abstract: Disclosed is a network port cover module and a network port locking device having the cover module. The network port cover module includes a plurality of modules inserted into and coupled to a network port of a network device, the plurality of modules being configured to be locked and coupled together or separated from each other, and configured to be locked and coupled to or unlocked and separated from the network port according to a locked and coupled state or an unlocked and separated state of the plurality of modules.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a substrate; a first insulating interlayer on the substrate; a first wiring in the first insulating interlayer on the substrate; an insulation pattern on a portion of the first insulating interlayer adjacent to the first wiring, the insulation pattern having a vertical sidewall and including a low dielectric material; an etch stop structure on the first wiring and the insulation pattern; a second insulating interlayer on the etch stop structure; and a via extending through the second insulating interlayer and the etch stop structure to contact an upper surface of the first wiring.

Abstract: A power amplifying radiator is disclosed that includes an electric field receiver or radiofrequency (RF) energy coupling and impedance matching element, a capacitive coupler, a cavity combiner including a coaxial-cavity section providing electromagnetic communication with the capacitive coupler, and a phased-array antenna/one or more phased-array antennas. The RF energy coupling and impedance matching element is in electromagnetic communication with the one or more phased-array antennas via the cavity combiner. The cavity combiner includes a center conductor configured and disposed to project from the coaxial-cavity section such that the cavity combiner defines a co-axial cross-sectional configuration. The power amplifying radiator may be included within a high power microwave system.

Abstract: Provided is an image processing apparatus including: a communicator configured to request image content from outside and receive a plurality of segments included in the image content; a signal processor configured to decode the plurality of segments to convert the plurality of segments to an image signal and a speech signal; and a controller configured to calculate a network bandwidth required for the communicator to receive a first segment having a first bit rate among the plurality of segments, and re-request a first segment having a second bit rate on the basis of the calculated network bandwidth.

Abstract: An electronic device is provided. The electronic device includes a first communication circuit, a second communication circuit, a processor configured to be electrically connected with the first communication circuit and the second communication circuit, and a memory configured to be electrically connected with the processor. The memory includes instructions, when executed by the processor, cause the processor to obtain location information of the electronic device, transmit a first message for requesting to change a state of the electronic device to a network, receive a first response message to the transmitted first message from the network, transmit a second message for requesting a parameter for an operation cycle of the second communication circuit to the network, receive a second response message to the second message from the network, and change the operation cycle of the second communication circuit to a value corresponding to a current state of the electronic device.

Abstract: Semiconductor devices including a capacitor in which electrostatic capacity is improved by a simplified process and/or methods for fabricating the same are provided. The semiconductor device including an insulating structure defining a first trench on a substrate, a first conductive layer in the insulating structure, a first portion of an upper surface of the first conductive layer exposed by the first trench, a capacitor structure including a first electrode pattern on the first conductive layer, a dielectric pattern on the first electrode pattern, and a second electrode pattern on the dielectric pattern, the first electrode pattern extending along sidewalls and a bottom surface of the first trench and an upper surface of the insulating structure, and a first wiring pattern on the capacitor structure may be provided.

Abstract: The present disclosure relates to a strip-like electrode for use in a cylindrical jelly roll which includes a strip-like electrode assembly wound cylindrically to form a hollow cavity at the core portion thereof, and a lithium secondary battery including the same. The strip-like electrode includes: a strip-like electrode current collector; a first electrode active material layer formed on at least one surface of the strip-like electrode current collector; and a second electrode active material layer formed on the first electrode active material layer, wherein the second electrode active material layer is formed to have a length smaller than the length of the first electrode active material layer so that a part of one longitudinal surface of the first electrode active material layer can be exposed to the outside.

Abstract: The present invention provides a method of preparing an electrode slurry for lithium secondary batteries in which the physical properties of the electrode slurry are improved to minimize a drag line by performing the primary mixing process at high viscosity, a method of manufacturing an electrode of which a defect rate of the electrode is reduced and with which battery stability is improved by using the method of preparing an electrode slurry for secondary batteries, an electrode manufactured using the method, and a secondary battery including the electrode.

Abstract: The present invention relates to a method, system and non-transitory computer-readable recording medium for assisting listening study. According to one aspect of the invention, there is provided a method for assisting listening study, comprising the steps of: determining a plurality of weak study sentences that a user who is provided with assessment study sentences by speech fails to understand, with reference to feedback from the user; determining at least some of pronunciations or pronunciation combinations commonly included in the plurality of weak study sentences as weak pronunciations or pronunciation combinations that the user fails to understand; and determining a compensatory study course to be provided to the user, with reference to the determined weak pronunciations or pronunciation combinations.

Abstract: A method of updating a grammar model used during speech recognition includes obtaining a corpus including at least one word, obtaining the at least one word from the corpus, splitting the at least one obtained word into at least one segment, generating a hint for recombining the at least one segment into the at least one word, and updating the grammar model by using at least one segment comprising the hint.

Abstract: Disclosed is a receptacle connector that can be freely positioned and that has excellent space utilization. A receptacle connector having an antenna function according to an aspect of the present invention is a receptacle connector for electrically connecting a plug connector and a circuit board and comprises a metal housing, a contact assembly, and a ceramic shell. The metal housing has an open front surface and an interior formed in a hollow shape. The contact assembly is provided with a plurality of contacts installed inside the metal housing to relay electrical signals. The ceramic shell is coupled in a shape surrounding the housing. The top surface of the ceramic shell has an antenna pattern formed thereon.

Abstract: The present invention provides a method of preparing a slurry for a secondary battery positive electrode which includes forming a first mixture in a paste state by adding a lithium iron phosphate-based positive electrode active material, a conductive agent, a binder, and a solvent, and preparing a slurry for a positive electrode by mixing while further adding a solvent to the first mixture in the paste state.

Abstract: A semiconductor may include a first inter metal dielectric (IMD) layer, a first blocking layer on the first IMD layer, a metal wiring and a second blocking layer. The first inter metal dielectric (IMD) layer may be formed on a substrate, the first IMD layer may include a low-k material having a dielectric constant lower than a dielectric constant of silicon oxide. The first blocking layer may be formed on the first IMD layer. The first blocking layer may include an oxide having a dielectric constant higher than the dielectric constant of the first IMD layer. The metal wiring may be through the first IMD layer and the first blocking layer. The second blocking layer may be formed on the metal wiring and the first blocking layer. The second blocking layer may include a nitride. The first and second blocking layers may reduce or prevent from the out gassing, so that a semiconductor device may have good characteristics.

Abstract: The present invention relates to a positive electrode active material pre-dispersion composition which includes a lithium iron phosphate-based positive electrode active material, a dispersant, and a solvent, wherein the dispersant includes a hydrogenated nitrile butadiene rubber (HNBR), a slurry composition for a secondary battery positive electrode which is prepared by using the positive electrode active material pre-dispersion composition, a positive electrode for a secondary battery, and a lithium secondary battery including the positive electrode.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a lower wiring, a first interlayer insulating film disposed on the substrate and including a first region and a second region over the first region, an etch stop film on the first interlayer insulating film, a second interlayer insulating film on the etch stop film, a first upper wiring in the second interlayer insulating film, the etch stop film, and the second region of the first interlayer insulating film and the first upper wiring is spaced apart from the lower wiring and a via in the first region of the first interlayer insulating film, and the via connects the lower wiring and the first upper wiring, wherein the first upper wiring includes a first portion in the second interlayer insulating film, and a second portion in the etch stop film and the second region of the first interlayer insulating film, and a sidewall of the second portion of the first upper wiring includes a stepwise shape.

Abstract: Disclosed is a network port cover module and a network port locking device having the cover module. The network port cover module includes a plurality of modules inserted into and coupled to a network port of a network device, the plurality of modules being configured to be locked and coupled together or separated from each other, and configured to be locked and coupled to or unlocked and separated from the network port according to a locked and coupled state or an unlocked and separated state of the plurality of modules.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.

Abstract: A semiconductor device including a substrate having a first surface and a second surface facing the first surface, the substrate having a via hole, the via hole extending from the first surface of the substrate toward the second surface of the substrate, a through via in the via hole, a semiconductor component on the first surface of the substrate, and an internal buffer structure spaced apart from the via hole and between the via hole and the semiconductor component, the internal buffer structure extending from the first surface of the substrate toward an inside of the substrate, a top end of the internal buffer structure being at a level higher than a top end of the through via may be provided.

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a first insulating film on the substrate, a lower metal layer in the first insulating film, and a second insulating film on the first insulating film. The lower metal layer may be in the second insulating film, the second insulating film may include a lower surface facing the substrate and an upper surface that is opposite the lower surface, and the upper surface of the second insulating film may be upwardly convex. The semiconductor devices may further include a barrier dielectric film including a recess on the second insulating film, and a via metal layer that is in the recess of the barrier dielectric film and electrically connected with the lower metal layer.