Abstract: Disclosed is a copolymer including a first part including an aromatic vinyl-based monomer and a conjugated diene-based monomer; and a second part including an aromatic vinyl-based monomer and a conjugated diene-based monomer, wherein the content of the aromatic vinyl-based monomer is 35 to 45% by weight based on a total weight of the copolymer, and the copolymer satisfies Equation 1 below: V1>V2??<Equation 1> wherein V1 is a vinyl content in the first part, and V2 is a vinyl content in the second part.

Abstract: An optical measurement apparatus includes a light source unit generating and outputting light, a polarized light generating unit generating polarized light from the light, an optical system generating a pupil image of a measurement target, using the polarized light, a self-interference generating unit generating multiple beams that are split from the pupil image, and a detecting unit detecting a self-interference image generated by interference of the multiple beams with each other.

Abstract: A wireless power receiving device includes a first housing, a second housing coupled to the first housing to be changed in relative position with respect to the first housing, a first resonance circuit disposed in the first housing, and at least one processor. The at least one processor may be configured to control the wireless power receiving device to wirelessly receive power from a wireless power transmitting device through the first resonance circuit, identify a charging efficiency corresponding to the received wireless power, and in case the identified charging efficiency is less than a threshold, provide content for changing an angle between the first housing and the second housing.

Abstract: An electronic device may include a communication module, a camera, and at least one processor operably coupled with the communication module and the camera.

Abstract: A semiconductor device includes a gate stack including a gate insulating layer and a gate electrode on the gate insulating layer. The gate insulating layer includes a first dielectric layer and a second dielectric layer on the first dielectric layer, and a dielectric constant of the second dielectric layer is greater than a dielectric constant of the first dielectric layer. The semiconductor device also includes a first spacer on a side surface of the gate stack, and a second spacer on the first spacer, wherein the second spacer includes a protruding portion extending from a level lower than a lower surface of the first spacer towards the first dielectric layer, and a dielectric constant of the second spacer is greater than the dielectric constant of the first dielectric layer and less than a dielectric constant of the first spacer.

Abstract: A semiconductor memory device includes a cell unit including a stack structure and a channel structure penetrating through the stack structure, the stack structure including at least one string selection gate and a plurality of cell gates, cell separation structures separating the cell unit in a first direction, and gate cutting structures defining regions within the cell unit between adjacent cell separation structures. The cell unit includes a first region defined between a first cell separation structure and a first gate cutting structure and a second region defined between the first gate cutting structure and a second gate cutting structure. A ratio of a region of the at least one string selection gate that is occupied by a conductive material in the second region is greater than a ratio of a region of at least one cell gate that is occupied by the conductive material in the second region.

Abstract: A roof rack apparatus for a vehicle includes a roof rack mounting bracket, a roof rack stanchion, a roof rack side rail, and a roof rack pad, such that it is possible to ensure structural durability further improved by a fastening force between an insert bolt and a bracket fixing bolt at the time of assembling the roof rack apparatus with a vehicle body. The roof rack mounting bracket is symmetric in a forward/rearward direction and a leftward/rightward direction with respect to a center of the insert bolt, such that the roof rack apparatus may be used in common. An operator may replace the roof rack with a new roof rack without detaching an interior material (head lining) in the vehicle, such that it is possible to prevent damage to the interior material at the time of replacing and repairing the roof rack.

Abstract: A control apparatus of a hybrid vehicle includes an input and output module for a driver to select a driving mode, an engine that generates power required for vehicle driving by fuel combustion, a driving motor that generates power required for vehicle driving and operates as a generator, a hybrid starter-generator (HSG) that starts the engine and operates as a generator, and a controller. When the driving mode is inputted to a stopping mode through the input and output module, based on an expected stop time, a current SOC of a battery, a target SOC of the battery, output of the driving motor, and output of the HSG, the controller that performs a first charging mode that charges the power generated by the engine in the battery through the driving motor and a second charging mode that charges the power generated by the engine in the battery through the driving motor and the HSG.

Abstract: A semiconductor memory device includes; a lower stacked structure including lower metallic lines stacked in a first direction on a substrate, an upper stacked structure including a first upper metallic line and a second upper metallic line sequentially stacked on the lower stacked structure, a vertical structure penetrating the upper stacked structure and lower stacked structure and including a channel film, a connection pad disposed on the vertical structure, contacted with the channel film and doped with N-type impurities, a first cutting line cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, a second cutting line spaced apart from the first cutting line in a second direction different from the first direction, and cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, and sub-cutting lines cutting the first upper metallic line and the second upper metallic line between the first cutting line and the second cuttin

Abstract: A semiconductor memory device includes a mold structure including a plurality of wordlines on a front side of a first substrate, and a string selection line and a stopper line on the plurality of wordlines. A channel structure extends in a vertical direction to penetrate the mold structure. A block separation area extends in a first direction to cut the mold structure. A protective structure is interposed between the block separation area and the stopper line and not between the block separation area and the string selection line and not between the block separation area and the plurality of wordlines. A string separation structure extends in the first direction to cut the string selection line and the stopper line. A bitline extends in a second direction on the mold structure. A bitline contact connects the channel structure and the bitline.

Abstract: The method includes forming a first dielectric layer on a substrate, forming a via in the first dielectric layer, sequentially forming a first metal pattern, a first metal oxide pattern, a second metal pattern, and an antireflective pattern on the first dielectric layer, and performing an annealing process to react the first metal oxide pattern and the second metal pattern with each other to form a second metal oxide pattern. The forming the second metal oxide pattern includes forming the second metal oxide pattern by a reaction between a metal element of the second metal pattern and an oxygen element of the first metal oxide pattern.

Abstract: A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.

Abstract: The present invention relates to a salivary gland therapeutic agent using the effects of a cell-derived vesicle of enhancing the proliferation capacity of salivary gland cells, promoting an amylase activity, and enhancing transepithelial resistance. A pharmaceutical composition comprising the cell-derived vesicle according to the present invention has the effects of enhancing the proliferation capacity of salivary gland cells damaged by radiation, promoting amylase activity, increasing transepithelial resistance, enhancing the expression of Aquaporin 5, and increasing the amount of saliva secretion. Therefore, the pharmaceutical composition comprising the cell-derived vesicle of the present invention can be used for preventing and treating salivary gland diseases, and thus can be widely used in the pharmaceutical industry and health functional food field.

Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

Abstract: Semiconductor packages may include a semiconductor chip on a substrate and an under-fill layer between the semiconductor chip and the substrate. The semiconductor chip may include a semiconductor substrate including first and second regions, and an interlayer dielectric layer that may cover the semiconductor substrate and may include connection lines. First conductive pads may be on the first region and may be electrically connected to some of the connection lines. Second conductive pads may be on the second region and may be electrically isolated from all of the connection lines. The semiconductor chip may also include a passivation layer that may cover the interlayer dielectric layer and may include holes that may expose the first and second conductive pads, respectively. On the second region, the under-fill layer may include a portion that may be in one of the first holes and contact one of the second conductive pads.

Abstract: The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.

Abstract: The present invention provides a rotor comprising: a rotor core; a plurality of magnets disposed outside the rotor core; and a molding part disposed outside the plurality of magnets, wherein the rotor core includes a plurality of guide protrusions disposed between the plurality of magnets, and the distance from the center of the rotor core to the outer surface of the molding part passing across the center of one of the guide protrusions is shorter than the distance from the same to the outer surface of the molding part passing across the center of one of the plurality of magnets.