Abstract: A semiconductor device is provided. The semiconductor device includes a substrate; an active layer disposed on the substrate; a via through the active layer; and a plurality of electrodes disposed on the active layer and into the via. Additionally, a package structure that includes the semiconductor device is also provided.

Abstract: A package structure is provided. The package structure includes a leadframe including a plurality of connection portions; a device including a substrate, an active layer disposed on the substrate and a plurality of electrodes disposed on the active layer, wherein the electrodes of the device are connected to the connection portions of the leadframe; a conductive unit having a first side and a second side, wherein the first side of the conductive unit connects to the substrate of the device and the conductive unit connects to at least one of the connection portions of the leadframe; and an encapsulation material covering the device and the leadframe, wherein the second side of the conductive unit is exposed from the encapsulation material.

Abstract: A power module package is provided, including a substrate, a first chip, and a second chip. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip.

Abstract: A power module package is provided, including a substrate, a first chip, and a second chip. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip.

Abstract: A package structure includes an encapsulant, an active component, a first lead frame segment, and a second lead frame segment. The active component is encapsulated within the encapsulant and includes first and second electrodes. The first and second electrodes are respectively disposed on and electrically connected to the first and second lead frame segments. The first and second lead frame segments respectively have first and second exposed surfaces. The first exposed surface and the first electrode are respectively located on opposite sides of the first lead frame segment. The second exposed surface and the second electrode are respectively located on opposite sides of the second lead frame segment. The first and second exposed surfaces are exposed outside the encapsulant. A minimal distance from the first electrode to the second electrode is less than a minimal distance from the first exposed surface to the second exposed surface.

Abstract: A packaging structure is provided, including a substrate, a first chip, a second chip, and a conductive unit. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip by the conductive unit.

Abstract: A power module package is provided, including a substrate, a first chip, and a second chip. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip.

Abstract: A power module package is provided, including a substrate, a first chip, and a second chip. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip.

Abstract: A packaging structure includes a lead frame, a chip, and a packaging material. The lead frame has a pair of opposed first surface and second surface, and has a first recessed region located on the second surface. The chip has a pair of opposed first surface and second surface. The first surface of the chip is fixed on the first recessed region. The packaging material surrounds the lead frame and the chip. The second surface of the chip is exposed from the packaging material, and the first surface of the lead frame is exposed from the packaging material.

Abstract: A thick-film copper paste is made. A displacement reaction with low cost is used to precipitate nano-silver (Ag) to be grown on copper particles. Thus, the thick-film copper paste is made of the copper powder coated with nano-Ag. The paste can be sintered in the air and is increased in overall electrical conductivity. The copper inside is not oxidized. Its resistance on electromigration is good. Furthermore, the paste can be added with frit as a sintering aid to assist sintering the nano-Ag-coated copper paste. Furthermore, even in a high-temperature heat treatment, the powder of nano-Ag-coated copper is still antioxidant and can replace the silver paste used in the current market.

Abstract: A package structure includes an encapsulant, an active component, a first lead frame segment, and a second lead frame segment. The active component is encapsulated within the encapsulant and includes first and second electrodes. The first and second electrodes are respectively disposed on and electrically connected to the first and second lead frame segments. The first and second lead frame segments respectively have first and second exposed surfaces. The first exposed surface and the first electrode are respectively located on opposite sides of the first lead frame segment. The second exposed surface and the second electrode are respectively located on opposite sides of the second lead frame segment. The first and second exposed surfaces are exposed outside the encapsulant. A minimal distance from the first electrode to the second electrode is less than a minimal distance from the first exposed surface to the second exposed surface.

Abstract: An electronic package is provided, including a substrate and a semiconductor chip. The substrate has a plurality of substrate pads. The semiconductor chip is mounted on the substrate, wherein the semiconductor chip includes a plurality of chip pads electrically connected to the substrate pads of the substrate respectively, and the substrate pads and the chip pads are both trapezoidal.

Abstract: A semiconductor device includes a lead frame, a first semiconductor component, a second semiconductor component, and a first conductive member. The lead frame includes a first segment having a first bottom plate, and a second segment having a second bottom plate. The first segment and the second segment are arranged side by side, the first bottom plate is spatially isolated from the second bottom plate, and the first bottom plate is thicker than the second bottom plate. The first semiconductor component is disposed on the first bottom plate, and the second semiconductor component is disposed on the second bottom plate. The second semiconductor component is thicker than the first semiconductor component. The first conductive member electrically connects the second semiconductor component to the first segment.

Abstract: A semiconductor component comprising a lateral semiconductor device, a vertical semiconductor device, and a leadframe is provided. The lateral semiconductor device has a first side and a second side, and a first electrode, a second electrode, and a control electrode positioned on the first side. The vertical semiconductor device has a first side and a second side, a second electrode and a control electrode of it positioned on the second side and a first electrode of it positioned on the first side. The leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device, the second electrode of the vertical semiconductor device, and the control electrodes, wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and the first electrodes of both devices are electrically connected.

Abstract: A packaging structure includes a lead frame, a chip, and a packaging material. The lead frame has a pair of opposed first surface and second surface, and has a first recessed region located on the second surface. The chip has a pair of opposed first surface and second surface. The first surface of the chip is fixed on the first recessed region. The packaging material surrounds the lead frame and the chip. The second surface of the chip is exposed from the packaging material, and the first surface of the lead frame is exposed from the packaging material.

Abstract: A packaging device including a first semiconductor device, a thermal dissipating component, an encapsulation layer, a via, and a pad. The first semiconductor device includes a substrate, an active region, and an electrode. The active region is disposed between the substrate and the electrode. The substrate has a first surface opposite to the active region, and the electrode has a second surface opposite to the active region. The thermal dissipating component is disposed on the first surface of the substrate. The encapsulation layer encloses the second surface of the electrode and a part of the thermal dissipating component, such that another part of the thermal dissipating component is exposed by the encapsulation layer. The pad is disposed on the encapsulation layer. The via is disposed in the encapsulation layer and connects the pad to the electrode.

Abstract: A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device has a via-hole formed through the first semiconductor device, wherein the via-hole has a first opening adjacent to the first side; an interconnection structure disposed in the first semiconductor device, wherein the interconnection structure includes: a via structure disposed in the via-hole without exceeding the first opening; a first pad disposed on the first side of the first semiconductor device and covering the via-hole; and a second semiconductor device vertically integrated with the first semiconductor device.

Abstract: A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device has a via-hole formed through the first semiconductor device, wherein the via-hole has a first opening adjacent to the first side; an interconnection structure disposed in the first semiconductor device, wherein the interconnection structure includes: a via structure disposed in the via-hole without exceeding the first opening; a first pad disposed on the first side of the first semiconductor device and covering the via-hole; and a second semiconductor device vertically integrated with the first semiconductor device.

Abstract: A semiconductor device includes a lead frame, a first semiconductor component, a second semiconductor component, and a first conductive member. The lead frame includes a first segment having a first bottom plate, and a second segment having a second bottom plate. The first segment and the second segment are arranged side by side, the first bottom plate is spatially isolated from the second bottom plate, and the first bottom plate is thicker than the second bottom plate. The first semiconductor component is disposed on the first bottom plate, and the second semiconductor component is disposed on the second bottom plate. The second semiconductor component is thicker than the first semiconductor component. The first conductive member electrically connects the second semiconductor component to the first segment.

Abstract: A wafer-level chip scale package is disclosed, including a chip including a substrate and a GaN transistor disposed on the substrate. The GaN transistor includes a first electrode, a dielectric layer disposed on the chip, and a redistribution trace disposed on the first dielectric layer and electrically connected with the first electrode, wherein the redistribution trace has a linear side and a curved side on opposite sides along its longitudinal direction.