Abstract: A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate, and a conductive pad passing through the ILD, disposed in the semiconductive substrate and configured to couple with an interconnect structure disposed over the ILD, wherein a portion of the conductive pad is surrounded by the semiconductive substrate, and a step height is configured by a surface of the portion of the conductive pad and the second side of the semiconductive substrate.

Abstract: An image sensor device is provided, and includes pixel units. Each of the pixel units includes a light sensing element, a first transistor and a second transistor. The first transistor is coupled to the light sensing element. The second transistor is coupled to the light sensing element and the first transistor. The first transistor includes a first gate structure having a first width, and the second transistor includes a second gate structure having a second width, in which a distance between the first gate structure and the second gate structure is substantially greater than the first width and the second width.

Abstract: A structure of an under bump metallization and a method of forming the same are provided. The under bump metallization has a redistribution via hole, viewed from the top, in a round shape or a polygon shape having an angle between adjacent edges greater than 90°. Therefore, the step coverage of the later formed metal layer can be improved.

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

Abstract: A bonding pad structure comprises an interconnect layer, an isolation layer over the interconnect layer, a conductive pad, and one or more non-conducting stress-releasing structures. The conductive pad comprises a planar portion over the isolation layer, and one or more bridging portions extending through at least the isolation layer and to the interconnect layer for establishing electric contact therewith, wherein there is a trench in the one or more bridging portions. The one or more non-conducting stress-releasing structures are disposed between the isolation layer and the conductive pad. The trench is surrounded by one of the one or more non-conducting stress-releasing structures from a top view.

Abstract: A semiconductor device includes a semiconductor substrate, trench isolations, a sacrificial layer, a first resist protect oxide (RPO) layer, a second RPO layer and a silicide layer. The semiconductor substrate has first portions and second portions which are alternately disposed, and each of the second portions includes a first resist region with a first resistance, a second resist region with a second resistance and a silicide region. The second resistance is greater than the first resistance. The trench isolations are in the first portions. The sacrificial layer is on the first resist region. The first RPO layer is on the sacrificial layer. The first RPO layer together with the sacrificial layer have a first thickness. The second RPO layer is on the second resist region, in which the second RPO layer has a second thickness smaller than the first thickness. The silicide layer is on the silicide region.

Abstract: A method of forming an image sensor device is disclosed. The method includes providing a substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region. The method further includes forming metal pillars over the pixel region and a metal shield layer over the non-pixel region. The metal pillars are disposed above spaces between adjacent sensor elements. The method further includes depositing a dielectric layer over the metal pillars and the metal shield layer; and etching the dielectric layer to form first and second trenches. The first trenches are formed over the pixel region and the second trenches are formed over the non-pixel region. Each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.

Abstract: A bonding pad structure for an image sensor device and a method of fabrication thereof. The image sensor device has a radiation-sensor region including a substrate and a radiation detection device, and a bonding pad region including the bonding pad structure. The bonding pad structure includes: an interconnect layer; an interlayer dielectric layer (IDL), both layers extending from under the substrate into the bonding pad region; an isolation layer formed on IDL; a conductive pad having a planar portion and one or more bridging portions extending perpendicularly from the planar portion, through the IDL and isolation layers, and to the interconnect layer; and a plurality of non-conducting stress-releasing structures disposed between the isolation layer and the conductive pad in such a way to adjoin its planar and the bridging portions together for releasing potential pulling stress applied thereon and preventing a conductive pad peeling.

Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

Abstract: An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region and has no sensor element. Dielectric grids are disposed in the pixel region with a first dielectric trench between two adjacent dielectric grids. The first dielectric trench aligns to a respective sensor element. Second dielectric trenches are disposed in the non-pixel region.

Abstract: A silencing device is disposed in an exhaust channel of a pneumatic tool. The exhaust channel has an outlet and an inner surface. The silencing device includes a shell-shaped silencer made of a porous material and a silencing washer disposed between the silencer and the inner surface of the exhaust channel. The silencer includes an open end, a closed end, an annular wall located between the open end and the closed end, and a concave portion located on the inner side of the annular wall. The open end is closer to the outlet of the exhaust channel than the closed end. The annular wall extends substantially along the inner surface of the exhaust channel. Therefore, the silencing device can lead to preferable effects of noise reduction and dust prevention and apply minimal adverse effect on the driving power of the pneumatic tool.

Abstract: An impact device for power transmission includes an impact unit and a hydraulic pressure adjusting unit. The impact unit has a hydraulic cylinder which is installed with a piston assembly and an output shaft therein for outputting torque through the output shaft by utilizing a hydraulic pressure provided in the hydraulic cylinder. The hydraulic pressure adjusting unit is disposed in the hydraulic cylinder and operative to adjust the hydraulic pressure of the hydraulic cylinder. Therefore, the impact device for power transmission can generate a hydraulic torque pulse, and the magnitude of the output torque can be adjusted by the hydraulic pressure adjusting unit.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.

Abstract: A pneumatic tool includes a housing that contains an installation tunnel, an air supplying channel and first and second air inlets, a control valve installed in the installation tunnel for shifting among first, second and third positions; a controller that is mounted on the control valve and has two paddles; a pushing rod that passes through the controller and the control valve; and a trigger that is attached to the pushing rod. The pneumatic tool provides the controller for a user to selectively operate with his/her left hand or right hand to perform forward/reverse switching and speed adjustment.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.

Abstract: A semiconductor wafer having a plurality of chip die areas arranged on a wafer in an array, each chip die area including a seal ring area with one or more first sets of polygonal structures. The wafer further comprises scribe line areas between the chip die areas, the scribe line areas including one or more second sets of polygonal structures. The presence of proximate polygonal structures between the scribe line and seal ring areas balance stresses between the chip die areas during wafer dicing operation.