Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.

Abstract: A semiconductor wafer having a plurality of chip die areas arranged on a wafer in an array, each chip die area including a seal ring area with one or more first sets of polygonal structures. The wafer further comprises scribe line areas between the chip die areas, the scribe line areas including one or more second sets of polygonal structures. The presence of proximate polygonal structures between the scribe line and seal ring areas balance stresses between the chip die areas during wafer dicing operation.

Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

Abstract: A backside illuminated (BSI) image sensor device includes a substrate including a front side and a back side; a radiation-sensing region in the substrate; a metal post with a longitudinal height and disposed over the back side; and a color filter adjacent to the metal post and substantially over the radiation-sensing region. The radiation-sensing region is configured to detect a radiation wave entering from the back side.

Abstract: A semiconductor structure includes a wafer including a first surface and a periphery, a plurality of protrusions protruded from the first surface and a plurality of recesses spaced from each other by the plurality of protrusions, and each of the plurality of recesses is extended from the periphery of the wafer and is elongated across the first surface of the wafer.

Abstract: A structure of an under bump metallization and a method of forming the same are provided. The under bump metallization has a redistribution via hole, viewed from the top, in a round shape or a polygon shape having an angle between adjacent edges greater than 90°. Therefore, the step coverage of the later formed metal layer can be improved.

Abstract: An optical touch pen includes a pen case, an operation module, and a power module. The operation module is disposed within an upper cover of the pen case, and includes a pen tip, a supporting part, a circuit board and a multi-directional auxiliary element. The multi-directional auxiliary element is arranged between an inner wall of the upper cover and the engaging structure of the supporting part. The power module is disposed within a lower cover of the pen case. When an external force is applied to the pen tip, the pen tip and the supporting part are shifted in response to the external force, the engaging structure of the supporting part is shifted relative to the multi-directional auxiliary element, and the external force is transmitted downwardly to the circuit board. Consequently, a current switch on the circuit board is triggered and the power module is electrically conducted.

Abstract: A backside illuminated CMOS image sensor and a manufacturing method thereof are provided. Embedded micro-lenses disposed respectively on concave surfaces of a buffer oxide layer, wherein the concave surfaces are positioned to respectively align with photodiodes of pixel array of the CMOS image sensor. The embedded micro-lenses can confine incident light to the photodiodes to reduce optical crosstalk between adjacent pixels.

Abstract: A semiconductor wafer includes a substrate, an integrated circuit and a die seal ring structure. The substrate is with a die region, a die seal ring region surrounding the die region and a scribe line region surrounding the die seal ring region. The substrate includes a first surface and a second surface opposite to the first surface, and periodic recesses within the first surface of the die seal ring region, the scribe line region or both the die seal ring region and the scribe line region. The integrated circuit is located on the first surface and the second surface of the die region. The die seal ring structure is located on the second surface of the die seal ring region. A semiconductor die is also provided.

Abstract: An image sensor comprises an image sensing substrate that in turns includes an image sensing device, a first sensor pixel, a second sensor pixel, and a divider. The divider is between the first sensor pixel and the second sensor pixel.

Abstract: An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region and has no sensor element. Dielectric grids are disposed in the pixel region with a first dielectric trench between two adjacent dielectric grids. The first dielectric trench aligns to a respective sensor element. Second dielectric trenches are disposed in the non-pixel region.

Abstract: A semiconductor device includes a semiconductor substrate, trench isolations, a sacrificial layer, a first resist protect oxide (RPO) layer, a second RPO layer and a silicide layer. The semiconductor substrate has first portions and second portions which are alternately disposed, and each of the second portions includes a first resist region with a first resistance, a second resist region with a second resistance and a silicide region. The second resistance is greater than the first resistance. The trench isolations are in the first portions. The sacrificial layer is on the first resist region. The first RPO layer is on the sacrificial layer. The first RPO layer together with the sacrificial layer have a first thickness. The second RPO layer is on the second resist region, in which the second RPO layer has a second thickness smaller than the first thickness. The silicide layer is on the silicide region.

Abstract: A switch assembly includes a circuit board mounted in the housing of an electric tool and carrying multiple magnetic sensor components, a first button having hooks slidably coupled to the circuit board and a press portion exposed to the outside of the housing for pressing by a user and a first magnetic member mounted at the press portion and movable with the first button relative to the housing to induce and change the magnetic flux of one magnetic sensor component, and a second button mounted in the housing and movable back and forth relative to the housing and carrying a second magnetic member that is movable with the second button to induce and change the magnetic flux of the other magnetic sensor component.

Abstract: A hydraulic pulse tool includes a power supply unit, a drive unit electrically connected to the power supply unit, a hydraulic pulse torque generating unit coupled to the drive unit and rotatable by the drive unit to produce impacts for causing the drive to produce an electric current change, and a control unit for judging the electric current change and controlling the operation of the drive unit subject to the judgment result. Subject to the above-stated technical characteristics, the hydraulic pulse tool, in addition to the shutoff function, can reduce errors in judgment and achieve multi-stage torque output control.

Abstract: An image sensor comprises an image sensing substrate that in turns includes an image sensing device, a first sensor pixel, a second sensor pixel, and a divider. The divider is between the first sensor pixel and the second sensor pixel.

Abstract: An electric riveter capable of rivet pre-pulling includes an operating unit, a controlling unit, a driving unit, and a clamping unit. The controlling unit controls the driving unit according to the way in which a user operates the operating unit, the clamping unit is driven by the driving unit to move between an initial position, a pre-pulling position, and a severing position. The operation method for the electric riveter entails: providing a rivet when the clamping unit is at the initial position; operating the operating unit in a first operation mode to move the clamping unit to the pre-pulling position and clamp the rivet; and operating the operating unit in a second operation mode to move the clamping unit to the severing position and sever the rivet. Accordingly, the rivet is prevented from falling off during the operation process, thereby enhancing ease of use of the electric riveter.

Abstract: Defining an oxide define region (ODR) without using a photomask is disclosed. Pad oxide and a stop layer are deposited over peaks of a substrate of a semiconductor wafer. The pad oxide may be silicon oxide, whereas the stop layer may be silicon nitride. Oxide, such as high-density plasma (HDP) oxide, is deposited over the pad oxide, the stop layer, and valleys of the substrate of the semiconductor wafer. A hard mask, such as silicon nitride, is deposited over the oxide, and photoresist is deposited over the hard mask. The photoresist is etched back until peaks of the hard mask are exposed. The peaks of the hard mask and the oxide underneath are etched through to the stop layer, and the photoresist is removed. Chemical-mechanical planarization (CMP) can then be performed on the hard mask that remains and the oxide underneath through to the stop layer, and the stop layer removed.

Abstract: Seal ring structures are provided with rounded corner junctions or corner junctions that include polygons. The seal rings surround generally rectangular semiconductor devices such as integrated circuits, image sensors and other devices. The seal ring includes a configuration of two sets of generally parallel opposed sides and the corner junctions are the junctions at which adjacent orthogonal seal ring sides are joined. The seal rings are trench structures or filled trench structures in various embodiments. The rounded corner junctions are formed by a curved arc or multiple line segments joined together at various angles. The corner junctions that include one or more enclosed polygons include polygons with at least one polygon side being formed by one of the seal ring sides.

Abstract: A semiconductor wafer having a plurality of chip die areas arranged on a wafer in an array, each chip die area including a seal ring area with one or more first sets of polygonal structures. The wafer further comprises scribe line areas between the chip die areas, the scribe line areas including one or more second sets of polygonal structures. The presence of proximate polygonal structures between the scribe line and seal ring areas balance stresses between the chip die areas during wafer dicing operation.

Abstract: Used in a pneumatic tool, a switch includes a valve seat set in an air intake passage and movable into contact with or away from a gas control member and defining an air hole, and a valve rod inserted through the air hole of the valve seat. When the positioning portion of the valve rod is stopped against the valve seat and the valve seat is stopped against the gas control member, the air intake passage is blocked. When the valve rod is biased relative to the valve seat, the positioning portion is moved away from the air hole of the valve seat for allowing a compressed gas to pass through the air hole, and when the valve rod is biased further to carry the valve seat away from the gas control member, the compressed gas is allowed to pass between the valve seat and the gas control member.