Patents by Inventor Hsin-Hsien Wu
Hsin-Hsien Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9648870Abstract: An antimicrobial composite material and a method for fabricating the same are provided. The antimicrobial composite material includes a porous material, a chelating agent, and a multivalent metal ion. The chelating agent is chemically bonded to the porous material, and the multivalent metal ion is chemically bonded to the chelating agent.Type: GrantFiled: July 29, 2015Date of Patent: May 16, 2017Assignee: Industrial Technology Research InstituteInventors: Hsin-Yi Huang, Hsin-Hsien Wu
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Publication number: 20170022611Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.Type: ApplicationFiled: April 7, 2015Publication date: January 26, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin CHANG, Hsin-Hsien WU, Zin-Chang WEI, Chi-Ming YANG, Chyi Shyuan CHERN, Jun-Lin YEH, Jih-Jse LIN, Jo Fei WANG, Ming-Yu FAN, Jong-I MOU
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Patent number: 9525104Abstract: This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlxGa1-xN (0<x<1) and the second sub-layer has a surface comprising a structure of irregularly distributed holes.Type: GrantFiled: January 23, 2014Date of Patent: December 20, 2016Assignee: EPISTAR CORPORATIONInventors: Yu-Yao Lin, Tsun-Kai Ko, Chien-Yuan Tseng, Yen-Chih Chen, Chun-Ta Yu, Shih-Chun Ling, Cheng-Hsiung Yen, Hsin-Hsien Wu
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Patent number: 9399288Abstract: An apparatus for driving a SCARA robot is provided. The apparatus includes a body, a horizontal rotating arm, a linear motor coil and a vertical magnetic axis. The linear motor coil is disposed on the horizontal rotating arm, and the vertical magnetic axis is passed through the linear motor coil. Wherein, the vertical magnetic axis can be driven by the linear motor coil of the horizontal rotating arm by a non-contact magnetic force.Type: GrantFiled: October 31, 2013Date of Patent: July 26, 2016Assignee: DELTA ELECTRONICS, INC.Inventors: Chih-Cheng Peng, Tsao-Hsiang Wang, Hsin-Hsien Wu
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Publication number: 20160185802Abstract: An antimicrobial composite material and a method for fabricating the same are provided. The antimicrobial composite material includes a porous material, a chelating agent, and a multivalent metal ion. The chelating agent is chemically bonded to the porous material, and the multivalent metal ion is chemically bonded to the chelating agent.Type: ApplicationFiled: July 29, 2015Publication date: June 30, 2016Inventors: Hsin-Yi HUANG, Hsin-Hsien WU
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Patent number: 9324624Abstract: The present disclosure involves a method of fabricating a light-emitting diode (LED) wafer. The method first determines a target surface morphology for the LED wafer. The target surface morphology yields a maximum light output for LEDs on the LED wafer. The LED wafer is etched to form a roughened wafer surface. Thereafter, using a laser scanning microscope, the method investigates an actual surface morphology of the LED wafer. Afterwards, if the actual surface morphology differs from the target surface morphology beyond an acceptable limit, the method repeats the etching step one or more times. The etching is repeated by adjusting one or more etching parameters.Type: GrantFiled: March 27, 2012Date of Patent: April 26, 2016Assignee: EPISTAR CORPORATIONInventors: Chyi-Shyuan Chern, Hsin-Hsien Wu, Yung-Hsin Yang, Ching-Hua Chiu
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Patent number: 9324910Abstract: A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.Type: GrantFiled: December 3, 2014Date of Patent: April 26, 2016Assignee: Epistar CorporationInventors: Hsin-Hsien Wu, Chyi Shyuan Chern, Chun-Lin Chang, Ching-Wen Hsiao, Kuang-Huan Hsu
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Patent number: 9296113Abstract: A linear delta mechanism includes a base platform, a movable platform, and a plurality of guide sets. The base platform includes a base structure and a base stand. The base stand is disposed at a center location of the base structure. The movable platform is movable with respect to the base platform. The plurality of guide sets are connected to the base platform and configured to drive the movable platform. Each of the guide sets includes a linear actuator and an actuating rod. The linear actuators of the guide sets are symmetrically disposed around the base stand. Each of the actuating rods has a first end and a second end. The first end is driven by the linear actuator, and the second end is connected to the movable platform.Type: GrantFiled: October 4, 2013Date of Patent: March 29, 2016Assignee: DELTA ELECTRONICS, INC.Inventors: Chih-Cheng Peng, Tsao-Hsiang Wang, Hsin-Hsien Wu, Ming-Chi Yang
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Patent number: 9287478Abstract: A plurality of conductive pads are disposed on a substrate. A plurality of semiconductor dies are each disposed on a respective one of the conductive pads. A mold device is positioned over the substrate. The mold device contains a plurality of recesses that are each configured to accommodate a respective one of the semiconductor dies underneath.Type: GrantFiled: May 8, 2014Date of Patent: March 15, 2016Assignee: EPISTAR CORPORATIONInventors: Chyi Shyuan Chern, Hsin-Hsien Wu, Chih-Kuang Yu, Hung-Yi Kuo
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Patent number: 9224636Abstract: A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical.Type: GrantFiled: May 1, 2014Date of Patent: December 29, 2015Assignee: TSMC SOLID STATE LIGHTING LTD.Inventors: Chyi Shyuan Chern, Hsin-Hsien Wu, Chun-Lin Chang, Hsing-Kuo Hsia, Hung-Yi Kuo
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Patent number: 9105591Abstract: A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.Type: GrantFiled: August 12, 2013Date of Patent: August 11, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Zin-Chang Wei, Hsin-Hsien Wu, Chun-Lin Chang
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Publication number: 20150211122Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.Type: ApplicationFiled: April 7, 2015Publication date: July 30, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Lin CHANG, Hsin-Hsien WU, Zin-Chang WEI, Chi-Ming YANG, Chyi Shyuan CHERN, Jun-Lin YEH, Jih-Jse LIN, Jo Fei WANG, Ming-Yu FAN, Jong-I MOU
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Patent number: 9087946Abstract: A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.Type: GrantFiled: October 26, 2012Date of Patent: July 21, 2015Assignee: Epistar CorporationInventors: Yu-Yao Lin, Yen-Chih Chen, Chien-Yuan Tseng, Tsun-Kai Ko, Chun-Ta Yu, Shih-Chun Ling, Cheng-Hsiung Yen, Hsin-Hsien Wu
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Patent number: 9023664Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.Type: GrantFiled: February 26, 2013Date of Patent: May 5, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Lin Chang, Hsin-Hsien Wu, Zin-Chang Wei, Chi-Ming Yang, Chyi-Shyuan Chern, Jun-Lin Yeh, Jih-Jse Lin, Jo-Fei Wang, Ming-Yu Fan, Jong-I Mou
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Patent number: 9024341Abstract: Two or more molded ellipsoid lenses are formed on a packaged LED die by injecting a glue material into a mold over the LED die and curing the glue material. After curing, the refractive index of the lens in contact with the LED die is greater than the refractive index of the lens not directly contacting the LED die. At least one phosphor material is incorporated into the glue material for at least one of the lenses not directly contacting the LED die. The lens directly contacting the LED die may also include one or more phosphor material. A high refractive index coating may be applied between the LED die and the lens.Type: GrantFiled: October 27, 2010Date of Patent: May 5, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Wen Lee, Shang-Yu Tsai, Tien-Ming Lin, Chyi Shyuan Chern, Hsin-Hsien Wu, Fu-Wen Liu, Huai-En Lai, Yu-Sheng Tang
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Patent number: 9000455Abstract: A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly.Type: GrantFiled: March 10, 2013Date of Patent: April 7, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Ming-Shing Lee, Chyi-Shyuan Chern, Hsin-Hsien Wu, Yung-Chang Chen, Ming-Hua Lo, Chu-Ching Tsai
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Publication number: 20150083998Abstract: A light-emitting diode (LED) element includes a substrate and a GaN layer formed on the substrate. The GaN layer includes a boundary layer including a surface of the GaN opposing the substrate. The surface has a micro-roughening texture and a macro-roughening texture. The boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions.Type: ApplicationFiled: December 3, 2014Publication date: March 26, 2015Inventors: Hsin-Hsien Wu, Chyi Shyuan Chern, Chun-Lin Chang, Ching-Wen Hsiao, Kuang-Huan Hsu
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Patent number: 8906712Abstract: A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.Type: GrantFiled: May 20, 2011Date of Patent: December 9, 2014Assignee: TSMC Solid State Lighting Ltd.Inventors: Hsin-Hsien Wu, Chyi Shyuan Chern, Chun-Lin Chang, Ching-Wen Hsiao, Kuang-Huan Hsu
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Publication number: 20140338489Abstract: A linear delta mechanism includes a base platform, a movable platform, and a plurality of guide sets. The base platform includes a base structure and a base stand. The base stand is disposed at a center location of the base structure. The movable platform is movable with respect to the base platform. The plurality of guide sets are connected to the base platform and configured to drive the movable platform. Each of the guide sets includes a linear actuator and an actuating rod. The linear actuators of the guide sets are symmetrically disposed around the base stand. Each of the actuating rods has a first end and a second end. The first end is driven by the linear actuator, and the second end is connected to the movable platform.Type: ApplicationFiled: October 4, 2013Publication date: November 20, 2014Applicant: Delta Robot Automatic Co., Ltd.Inventors: Chih-Cheng PENG, Tsao-Hsiang WANG, Hsin-Hsien WU, Ming-Chi YANG
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Patent number: 8889440Abstract: An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching.Type: GrantFiled: December 11, 2013Date of Patent: November 18, 2014Assignee: TSMC Solid State Lighting Ltd.Inventors: Yung-Chang Chen, Hsin-Hsien Wu, Ming Shing Lee, Huai-En Lai, Fu-Wen Liu, Andy Wu