Abstract: A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of heaters arranged and operative to heat the chamber. The heating system includes at least one top heater; at least one bottom heater, and a plurality of sidewall heaters spaced along the height of the reaction chamber to control temperature variations within in the chamber and promote uniform film deposit thickness on the wafers.

Abstract: An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.

Abstract: A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer.

Abstract: A catalyst for decomposing volatile organic compounds is provided. The catalyst includes a mesoporous material and silver carried by the mesoporous material. The invention also provides a method for decomposing volatile organic compounds. The method includes providing a gas containing volatile organic compounds and contacting the gas containing volatile organic compounds and the disclosed catalyst to decompose and oxidize the gas containing volatile organic compounds into carbon dioxide and water.

Abstract: A method of memory management for an apparatus having a non-volatile memory and a volatile memory includes the steps of forming a tree structure of entries in the volatile memory, in which the tree structure has a left branch and a right branch, and a difference of heights of the left branch and the right branch is equal to or less than one; and accessing an entry in the volatile memory through the tree structure.

Abstract: This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.

Abstract: A flash memory system includes a path selector to determine to write to a non-volatile memory, a volatile memory or both the non-volatile memory and the volatile memory when the flash memory system is to write data. A record is stored in the non-volatile memory which is updated the status of the non-volatile memory after each one or more writing operations. When the flash memory system is powered on after a power loss, it could be recovered to a command executed prior to the power loss or to any checkpoint prior to the power loss by using the record.

Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

Abstract: A headset includes two sound output units and a connector connecting the two sound output units. Each of the two sound output units includes a limiting part arranged thereon. The connector is made of an elastic material and capable of being flexibly mounted to each of the limiting parts so as to improve the convenience of using the headset by making it easy to wear, adjust and collect.

Abstract: A system for screening a small molecule library with 250,000 molecules to find out a compound of an anti-hypertensive drug aiming at human Angiotensin II type IA receptor is provided. The system includes a first database having a three-dimensional structure datum of a human Angiotensin II type IA receptor, a second database having molecular data of a plurality of small molecules, and a computer acquiring the three-dimensional structure datum and the molecular data from the first database and the second database respectively, wherein the computer has a molecular docking software for calculating a free energy of the human Angiotensin II type IA receptor bound to each of the plurality of small molecules, ranks the plurality of small molecules according to the respective free energy so as to select a top small molecule in the ranking as the compound of the drug.

Abstract: A cable of easy collection includes multiple hardened sections and multiple soft sections. Each of the soft sections is disposed between each two hardened sections so that the hardened sections can overlap with each other.

Abstract: A method for treating waste gas containing acid and/or base, employing fine spray-scrubbing technology for treating the waste gas mentioned above, wherein the scrubbing solution is atomized to generate mists with droplet size of 1 to 100 ?m. Another feature of the present invention is to combine the application of surfactant in wet scrubbing technology for treating waste gas containing acids, bases, or both, especially, in a low concentration. Another feature of the present invention is to combine spray tower and/or packed tower and/or other scrubbers vertically/horizontally to get enhanced performance of the conventional control systems.

Abstract: A method for treating waste gas containing acid and/or base, employing fine spray-scrubbing technology for treating the waste gas mentioned above, wherein the scrubbing solution is atomized to generate mists with droplet size of 1 to 100 ?m. Another feature of the present invention is to combine the application of surfactant in wet scrubbing technology for treating waste gas containing acids, bases, or both, especially, in a low concentration. Another feature of the present invention is to combine spray tower and/or packed tower and/or other scrubbers vertically/horizontally to get enhanced performance of the conventional control systems.

Abstract: A method for treating waste gas containing PFC and/or HFC, comprising contacting a mixture of gas waste containing PFC and/or HFC, ozone, and water with an iron oxide catalyst at a temperature between 50 and 300° C. by gas-solid contact to perform an oxidation reaction for reducing the amount of PFC and/or HFC. An apparatus for treating waste gas containing PFC or HFC is also provided. The operational temperature in the present invention is much lower than the prior art, and thus provides lower energy consumption and little risk of fire. The present invention is suitable for the treatment of waste gas containing PFC and/or HFC, especially for the removal of perfluorocompounds from the waste gas generated by semiconductor and photoelectrical product manufacturing plants.

Abstract: A method and apparatus for treating an exhaust gas containing volatile organic compounds. The method includes the steps of: introducing an exhaust gas into a wet scrubber, so that the organic pollutants in the exhaust gas are absorbed by a scrubbing water; pumping the scrubbing water containing the organic pollutants into at least one oxidation tank, thereby causing oxidation reaction between the organic pollutants and an oxidizing agents containing ozone; and introducing the scrubbing water after the oxidation reaction into the wet scrubber. The oxidizing agent further comprises hydrogen peroxide.

Abstract: A method for treating waste gas containing PFC and/or HFC, comprising contacting a mixture of gas waste containing PFC and/or HFC, ozone, and water with an iron oxide catalyst at a temperature between 50 and 300° C. by gas-solid contact to perform an oxidation reaction for reducing the amount of PFC and/or HFC. An apparatus for treating waste gas containing PFC or HFC is also provided. The operational temperature in the present invention is much lower than the prior art, and thus provides lower energy consumption and little risk of fire. The present invention is suitable for the treatment of waste gas containing PFC and/or HFC, especially for the removal of perfluorocompounds from the waste gas generated by semiconductor and photoelectrical product manufacturing plants.

Abstract: A decoration bulb assembly includes a base and an adapter is connected to the base. A plurality of main wires extend from the adapter and a plurality of bulbs connected to the main wires. The base is connected to an electric socket to power the bulbs.

Abstract: A method and apparatus for treating an exhaust gas containing volatile organic compounds. The method includes the steps of: introducing an exhaust gas into a wet scrubber, so that the organic pollutants in the exhaust gas are absorbed by a scrubbing water; pumping the scrubbing water containing the organic pollutants into at least one oxidation tank, thereby causing oxidation reaction between the organic pollutants and an oxidizing agents containing ozone; and introducing the scrubbing water after the oxidation reaction into the wet scrubber. The oxidizing agent further comprises hydrogen peroxide.