Abstract: An optical sensor includes pixels disposed in a substrate. A light collimating layer is disposed on the substrate and includes a transparent layer, a light-shielding layer, and transparent pillars. The transparent layer blanketly disposed on the substrate covers the pixels and the region between the pixels. The light-shielding layer is disposed on the transparent layer and between the transparent pillars. The transparent pillars penetrating through the light-shielding layer are correspondingly disposed on the pixels.

Abstract: An optical sensor includes a substrate and a light collimating layer. The substrate includes a sensor pixel array having a plurality of sensor pixels. The light collimating layer is disposed on the substrate. The light collimating layer includes a patterned seed layer, a plurality of transparent pillars, a metal layer, and a mask layer. The patterned seed layer is disposed on the substrate. The patterned seed layer exposes the sensor pixel array. The transparent pillars are disposed on the sensor pixel array. The metal layer is disposed on the patterned seed layer and in between the transparent pillars. The mask layer is disposed on the metal layer.

Abstract: An optical sensor is provided, wherein the optical sensor includes an image sensing array, a collimator layer, and a light-shielding layer. The image sensor array includes a plurality of pixels. The collimator layer is disposed on the image sensor array and includes a plurality of openings corresponding to the pixels. The collimator layer includes a first surface facing the image sensor array and a second surface opposite to the first surface. The light-shielding layer is disposed on sidewalls of the openings.

Abstract: An optical sensor structure is provided. The optical sensor structure includes a sensor pixel array in a substrate, a light collimating layer on the substrate, and at least one through-substrate via. The sensor pixel array has a plurality of sensor pixels. The at least one through-substrate via extends from a first surface to an opposite second surface of the substrate. The at least one through-substrate via is in the sensor pixel array and vertically misaligned with the plurality of sensor pixels.

Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.

Abstract: An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a substrate, forming a first light-shielding layer on the substrate, and performing a first lithography process to pattern the first light-shielding layer to form a plurality of first openings in the first light-shielding layer. The first openings expose pixels of the substrate. The method also includes placing a first stencil on the first light-shielding layer. The first stencil has a first openwork pattern which exposes the pixels of the substrate. The method also includes providing a first material. The first material includes a transparent material. The method also includes applying the first material onto the substrate through the first stencil to cover the pixels and fill the first openings, such that a plurality of first transparent pillars made of the first material are formed on the pixels.

Abstract: An optical sensor is provided, wherein the optical sensor includes an image sensing array, a collimator layer, and a light-shielding layer. The image sensor array includes a plurality of pixels. The collimator layer is disposed on the image sensor array and includes a plurality of openings corresponding to the pixels. The collimator layer includes a first surface facing the image sensor array and a second surface opposite to the first surface. The light-shielding layer is disposed on sidewalls of the openings.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a substrate, placing a first stencil having a first openwork pattern on the substrate, applying a first material onto the substrate through the first stencil, and removing the first stencil from the substrate. The first material includes a transparent material. The method also includes placing a second stencil having a second openwork pattern on the substrate, applying a second material onto the substrate through the second stencil, and removing the second stencil from the substrate. The second material includes a light-shielding material, and the second openwork pattern is different from the first openwork pattern.

Abstract: System and method for gas pressure stabilization. The system comprises a pressure stabilizer which is divided into a receiving chamber and a pressure chamber by a flexible membrane, a booster device, a gas divider, and a control driver that can sense movement of the flexible membrane and control the gas divider accordingly. A pressure pilot is used to set the desired pressure in the pressure chamber. The pressure of the receiving chamber will stabilize to be the same with that of the pressure chamber regardless of the gas flow change or gas pressure change at the gas source, or the pressure fluctuation in the downstream system. The gas passing the system can eventually be recycled to a recycling system in the downstream without harming the environment.

Abstract: A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.

Abstract: System and method for gas pressure stabilization. The system comprises a pressure stabilizer which is divided into a receiving chamber and a pressure chamber by a flexible membrane, a booster device, a gas divider, and a control driver that can sense movement of the flexible membrane and control the gas divider accordingly. A pressure pilot is used to set the desired pressure in the pressure chamber. The pressure of the receiving chamber will stabilize to be the same with that of the pressure chamber regardless of the gas flow change or gas pressure change at the gas source, or the pressure fluctuation in the downstream system. The gas passing the system can eventually be recycled to a recycling system in the downstream without harming the environment.

Abstract: A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.

Abstract: An integrated circuit structure includes a semiconductor chip having a die side and a non-die side, the die side having one or more trenches formed therein. The integrated circuit structure further includes at least one die bonded onto the die side of the semiconductor chip. The integrated circuit structure further includes a protecting material encapsulating the at least one die and substantially filling the one or more trenches.

Abstract: A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.

Abstract: A method of inspecting a structure of a device and a system for doing the same is described. The method includes generating a sample image of a device having a structure to be inspected; identifying a plurality of features of the sample image; comparing the plurality of features to a corresponding plurality of features of a reference image; and locating features in the sample image that deviate from corresponding features of the reference image. The generating step includes moving the device, a detector array or both, relative to one another, wherein the detector array is configured to generate a line of data representing light reflected from the device, and assembling lines of data from the detector array to generate a sample image.

Abstract: An integrated circuit structure includes a semiconductor chip having a die side and a non-die side, the die side having one or more trenches formed therein. The integrated circuit structure further includes at least one die bonded onto the die side of the semiconductor chip. The integrated circuit structure further includes a protecting material encapsulating the at least one die and substantially filling the one or more trenches.

Abstract: A wafer is provided having a chip side and a non-chip side, the chip side comprising a plurality of semiconductor chips. A plurality of dies are provided, each of the dies is bonded to one of the plurality of semiconductor chips. One or more trenches are formed on the chip side of the wafer. The chip side of the wafer and the plurality of dies are encapsulated with a protecting material, the protecting material substantially filling the one or more trenches. The wafer is diced to separate it into individual semiconductor packages.

Abstract: A semiconductor structure includes a plurality of solder structures between a first substrate and a second substrate. A first encapsulation material is substantially around a first one of the solder structures and a second encapsulation material is substantially around a second one of the solder structures. The first one and the second one of the solder structures are near to each other and a gap is between the first encapsulation material and the second encapsulation material.

Abstract: A new method is provided for the creation of a solder bump. Conventional methods are initially followed, creating a patterned layer of Under Bump Metal over the surface of a contact pad. A layer of photoresist is next deposited, this layer of photoresist is patterned and developed creating a resist mask having a T-shape opening aligned with the contact pad. This T-shaped opening is filled with a solder compound, creating a T-shaped layer of solder compound on the surface of the layer of UBM. The layer of photoresist is removed, exposing the created T-shaped layer of solder compound, further exposing the layer of UBM. The layer of UBM is etched using the T-shaped layer of solder compound as a mask. Reflow of the solder compound results in creating a solder ball.