Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.

Abstract: A method for producing jelly bobas includes steps providing an apparatus for producing jelly bobas comprising a tank, a cutting set and a pool, wherein the tank comprises a main body and a bottom plate, the bottom plate comprises a plurality of holes and the cutting set is positioned under the bottom plate; continuously pouring a gel into the tank, wherein the gel has a viscosity ranged between 25000 and 95000 cps at 6 rpm or between 30000 and 180000 cps at 3 rpm as measured with LV-4 spindle of Brookfield Viscometer; the gel continuously passing through the plurality of holes by means of a gravity thereof; the cutting set continuously cutting off the gel passed through the plurality of holes in a rotation manner for continuously forming a plurality of jelly bobas; and the pool receiving the plurality of jelly bobas and a solidifying agent contained therein shaping the jelly bobas.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: An electronic card structure with decorations includes a card body, an electrical control module and a decoration module. The card body includes a panel, a bottom plate and a through hole portion. The electrical control module is disposed in the card body. The electrical control module includes a circuit control carrier plate and a non-contact type radio-frequency antenna or a contact type communication chip. The decoration module is disposed in the card body. The decoration module includes a transparent casing and a decoration. The transparent casing is disposed at the panel through the through hole portion. The decoration is disposed in the transparent casing. Therefore, owing to the decoration module, the electronic card is pleasing in appearance, has high commemorative value, and is worth collection.

Abstract: A selective etching process includes treating a first dielectric region and a second dielectric region of a semiconductor device with a self-assembled-monolayer-forming compound to form a self-assembled monolayer to selectively cover the first dielectric region so as to expose the second dielectric region; and selectively etching the second dielectric region using a dilute acid solution while the first dielectric region is protected by the self-assembled monolayer from being etched by the dilute acid solution.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a channel structure extending between a first source/drain region and a second source/drain region. Further, a gate electrode is arranged directly over the channel structures, and an upper interconnect contact is arranged over and coupled to the gate electrode. A backside contact is arranged below and coupled to the first source/drain region. The backside contact has a width that decreases from a bottommost surface of the backside contact to a topmost surface of the backside contact.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly and a first driving assembly. The movable assembly is movable relative to the fixed assembly. The first driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The optical element driving mechanism further includes a first opening, and an external light beam travels along a first axis to pass through the first opening.

Abstract: A power consumption monitoring device includes a sensor, a storage, and a processor. The sensor is configured to detect a power-consuming device quantity and a power consumption amount. The storage is configured to store the power-consuming device quantity and the power consumption amount. The processor is communicatively connected to the sensor and the storage. The processor is configured to calculate a power-consuming device idling indicator based on the power-consuming device quantity and the power consumption amount in a monitoring time interval, wherein the power-consuming device idling indicator is used for indicating a deviation status of the power-consuming device quantity and the power consumption amount. The processor is further configured to determine whether the power-consuming device idling indicator exceeds a warning threshold. In response to the power-consuming device idling indicator exceeding the warning threshold, the processor is further configured to generate a warning message.

Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.

Abstract: The present disclosure provides a control method applied to a first electronic device and a second electronic device in a physical environment. The first electronic device and the second electronic device are configured to communicate with each other through a first wireless connection established between the first electronic device and the second electronic device. The control method includes: by at least one of the first electronic device and the second electronic device, determining whether to update a map of the physical environment; and in response to a determination to update the map of the physical environment, establishing a second wireless connection different from the first wireless connection between the first electronic device and the second electronic device, wherein the second wireless connection is configured to transmit a map updated data, and the map updated data is configured to update the map of the physical environment.

Abstract: Provided is an anti-fuse memory including a anti-fuse memory cell including an isolation structure, a select gate, first and second gate insulating layers, an anti-fuse gate, and first, second and third doped regions. The isolation structure is disposed in a substrate. The select gate is disposed on the substrate. The first gate insulating layer is disposed between the select gate and the substrate. The anti-fuse gate is disposed on the substrate and partially overlapped with the isolation structure. The second gate insulating layer is disposed between the anti-fuse gate and the substrate. The first doped region and the second doped region are disposed in the substrate at opposite sides of the select gate, respectively, wherein the first doped region is located between the select gate and the anti-fuse gate. The third doped region is disposed in the substrate and located between the first doped region and the isolation structure.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: An optical fingerprint sensing module includes an image sensing device, a light source and a light shielding structure. The image sensing device is configured to sense light transmitted from a fingerprint of a finger on a display panel. The image sensing device includes a light sensing plane having a first geometric center. The light source includes a light emitting plane having a second geometric center. The first geometric center is separated from the second geometric center by a distance from 2 mm to 20 mm. The light shielding structure is disposed between the image sensing device and the light source. In examples, the optical fingerprint sensing module further includes a field angle controller to constrain light pass there through with a field angle of 5-60 degrees. A display device including an optical fingerprint sensing module is disclosed herein as well.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: A method for filling a gap in a semiconductor structure includes: forming the gap between two raised portions of the semiconductor structure, the gap having a bottom surface and two lateral surfaces each extending upwardly from the bottom surface along one of the raised portions to terminate at an upper surface of a corresponding one of the raised portions; and forming a filler element in the gap in a bottom-up manner that avoids the filler element being formed laterally.

Abstract: An electronic card structure with decorations includes a card body, an electrical control module and a decoration module. The card body includes a panel, a bottom plate and a through hole portion. The electrical control module is disposed in the card body. The electrical control module includes a circuit control carrier plate and a non-contact type radio-frequency antenna or a contact type communication chip. The decoration module is disposed in the card body. The decoration module includes a transparent casing and a decoration. The transparent casing is disposed at the panel through the through hole portion. The decoration is disposed in the transparent casing. Therefore, owing to the decoration module, the electronic card is pleasing in appearance, has high commemorative value, and is worth collection.

Abstract: An electronic card capable of light-emitting display includes a card body, electrical control module, light-emitting module and light-guiding module. The card body has a light-penetrable border portion having a surface on which an oblique refraction portion is disposed. The electrical control module is disposed in the card body and includes a circuit control carrier plate and a non-contact type radio-frequency antenna or a contact type communication chip. The light-emitting module is disposed in the card body and electrically connected to the circuit control carrier plate. The light-guiding module is disposed in the card body and corresponds in position to the light-emitting module. During personal data or transaction data exchange carried out with the card body, light emitted from the light-emitting module driven by the electrical control module is guided by the light-guiding module to the light-penetrable border portion, allowing the oblique refraction portion to increase display light brightness.

Abstract: The present disclosure provides an immersion cooling system for a server cabinet including a plurality of server boxes, a cooling tank and a plurality of liquid connecting pipes. Each server box includes an electronic device immersed in the cooling liquid, and the electronic device generates a thermal energy so that part of the cooling liquid evaporates into a hot vapor. The cooling tank is connected to the plurality of server boxes and includes a condenser and a storage part. The condenser is connected to each server box and condenses the hot vapor to form the cooling liquid. The storage part storages the cooling liquid from the condenser. Two ends of the liquid connecting pipe is connected to the storage part and the server box respectively. The cooling liquid in the storage part and the cooling liquid of each server box are maintained in a same liquid level.

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.