Abstract: A metal-insulator-metal (MIM) device may include a first metal layer. The MIM device may include an insulator stack on the first metal layer. The insulator stack may include a first high dielectric constant (high-K) layer on the first metal layer. The insulator stack may include a low dielectric constant (low-K) layer on the first high-K layer. The insulator stack may include a second high-K layer on the low-K layer. The MIM device may include a second metal layer on the insulator stack.

Abstract: One or more semiconductor processing tools may deposit a contact etch stop layer on a substrate. In some implementations, the contact etch stop layer is comprised of less than approximately 12 percent hydrogen. Depositing the contact etch stop layer may include depositing contact etch stop layer material at a temperature of greater than approximately 600 degrees Celsius, at a pressure of greater than approximately 150 torr, and/or with a ratio of at least approximately 70:1 of NH3 and SiH4, among other examples. The one or more semiconductor processing tools may deposit a silicon-based layer above the contact etch stop layer. The one or more semiconductor processing tools may perform an etching operation into the silicon-based layer until reaching the contact etch stop layer to form a trench isolation structure.

Abstract: A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.

Abstract: A fixing device includes a main body, a sliding block, and a fixing rod. The main body has a sliding rail and a guiding hole, and the sliding rail which is disposed at a front side of the main body vertically extends. The guiding hole adjoins the sliding rail and horizontally extends through the main body. The sliding block is slidably connected to the sliding rail. The fixing rod is movably connected to the sliding block extending through the guiding hole, and the sliding block is configured to move along the sliding rail and enable the guiding hole to drive the fixing rod to horizontally move.

Abstract: A manufacturing method is provided. The method includes steps below. Forming bottom electrodes. Blanketly forming a resistance switching layer on the bottom electrodes. Forming a first insulating material layer on the resistance switching layer. Patterning the first insulating material layer to form insulating patterns. Conformally forming a channel layer having a plurality of channel regions on the resistance switching layer and the insulating patterns, wherein the plurality of channel regions are located on the resistance switching layer and cover opposite sides of the insulating patterns. Forming a second electrode material layer on the channel layer. Patterning the second electrode material layer to form top electrodes, each of the top electrodes is located in corresponding to one of the insulating patterns and covers at least two of the plurality of channel regions.

Abstract: An airtight device includes a container and an airtight cover on the container, and the airtight cover includes a fixing bracket, a door, and a pressuring handle. The fixing bracket has a through hole and a guiding slot, and the through hole communicates with internal space of the container. The guiding slot has adjacent first and second top surfaces, and the second top surface is higher than the first top surface. The door selectively covers the through hole. The pressuring handle pivoted on the door has a first section, a second section, and a rotating axis between the first and second sections, and the first section rotates relative to the second section. The second section receives a force to drive the first section to move from below the second top surface to below the first top surface such that the rotating axis pressures the door.

Abstract: A hanging device includes an accommodation main body, a sliding assembly, a hook, and the accommodation main body that includes two parallel sidewalls, in which a first vertical path is defined between the two sidewalls. The sliding assembly is movably connected between the two sidewalls to move relative to the main body along the first vertical path. The sliding assembly further includes a sliding rail which defines a second vertical path, and the hook is movably connected to the sliding rail to move relative to the sliding assembly along the second vertical path.

Abstract: An immersion cooling system includes a tank, a first condenser, an enclosure, a second condenser and a connecting pipe. The tank has a first space. The first space is configured to accommodate a cooling liquid for at least one electronic equipment to immerse therein. The first condenser is disposed inside the tank. The enclosure is disposed outside the tank. The enclosure forms a second space together with the tank. The second condenser is disposed in the second space. The connecting pipe includes a first end and a second end opposite to the first end. The first end is connected with the second condenser. The second end is communicated with the first space.

Abstract: An immersion cooling system includes a cooling tank and a filtration system. The cooling tank is configured to accommodate a liquid coolant and an electronic device immersed in the liquid coolant. The filtration system includes a pipeline, a pump, a filter and a cooling device. The pipeline is in fluid communication with the cooling tank. The pump is disposed in the pipeline and is configured to drive the liquid coolant to flow through the pipeline. The filter is disposed in the pipeline and is configured to filter the liquid coolant. The cooling device is connected to the pipeline and is configured to cool the liquid coolant. The pipeline has an inlet connected to the cooling tank. The cooling device is located between the pump and the inlet of the pipeline.

Abstract: An immersion cooling system includes a tank, an isolation plate and a condenser. The tank includes a base plate and a sidewall connected with the base plate. The sidewall defines with the base plate a space configured to accommodate a cooling liquid. The isolation plate connects with the sidewall or the base plate and divides the space into a first subsidiary space and a second subsidiary space. The first subsidiary space is configured to accommodate electronic equipment which is immersed in the cooling liquid. The isolation plate and the base plate are separated from each other. The sidewall surrounds the condenser. A vertical projection of the condenser towards the base plate at least partially overlaps with the second subsidiary space. The electronic equipment evaporates a portion of the cooling liquid to form a vapor. The condenser is configured to condense the vapor into a liquid form.

Abstract: An immersion cooling system includes a cooling tank, a housing and a valve. The coolant tank is configured to accommodate a liquid coolant and an electronic device immersed in the liquid coolant. The housing covers a side of the cooling tank and thereby forms an enclosure. The valve has two ports, one of which communicates with the enclosure and the other communicates with a part of the cooling tank above the liquid coolant. The valve is configured to open in response to a gas pressure inside the cooling tank exceeding an upper limit.

Abstract: A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.

Abstract: The method includes placing a wafer in a chamber body of a plasma processing tool; moving a first movable jig along an arc path to comb a spiral-shaped radio frequency (RF) coil over the chamber body, the first movable jig having a plurality of first confining slots penetrated by a plurality of coil segments of the spiral-shaped RF coil, respectively; and generating plasma in the chamber body through the spiral-shaped RF coil.

Abstract: A sensing device includes a light-field image sensor and a sensing circuit. The light-field image sensor includes a plurality of subarrays. One of the subarrays corresponds to sensing pixels. The sensing pixels are to capture images of an object on or in proximity to a display panel by sensing lights from different directions. The sensing circuit is to generate a plurality of sub-images of the object according to sensing signals of the sensing pixels and shift each of the sub-images of the object by an off-set to generate an image data.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

Abstract: A vibration absorbing assembly is adapted to be disposed on a cable. The vibration absorbing assembly includes a mount frame and a flexible covering component. The mount frame includes a first part and a second part. The second part is detachably assembled with the first part, and the first part and the second part together form an accommodation space. The flexible covering component is located in the accommodation space and pressed by the first part and the second part so as to surround a covering space. The covering space is configured to accommodate the cable.

Abstract: A device for simply determining maximum permissible exposure time (MPE) of retina is disclosed, which principally comprises a light receiving unit and a core processor that is provided with a color temperature determining unit, a luminous flux determining unit and a calculating unit therein. The color temperature determining unit and the luminous flux determining unit are configured for completing a color temperature determination and a luminous flux determination of a light provided by a light source, respectively. The calculating unit is configured for calculating a maximum permissible exposure time (MPE) of retina of the light source based on a use distance and a color temperature and a luminous flux of the light. By using this device, generic users are facilitated to achieve the calculation of any one kind of light's MPE by themselves, without needing to using any spectrometer.

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

Abstract: A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.