Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: A capacitive fingerprint sensor includes a plate, a frame, a capacitive fingerprint sensor chip and a package body. The plate comprises a first surface, an opposite second surface and a plurality of first conductive pads arranged on the first surface. A plurality of second conductive pads and third conductive pads are respectively arranged on opposite surfaces of the frame, wherein the second conductive pads are electrically connected with the corresponding first conductive pads and third conductive pads. The capacitive fingerprint sensor chip is disposed at the central area of the frame by a flip chip manner and electrically connected with the first conductive pads. The package body is filled in the central area of the frame to cover the chip. The above-mentioned sensor has a flat sensing surface with wear resistance and better ESD toleration. A package method of the above-mentioned sensor is also disclosed.

Abstract: A semiconductor devices and method of formation are provided herein. A semiconductor device includes a gate structure over a channel and an active region adjacent the channel. The active region includes a repaired doped region and a growth region over the repaired doped region. The repaired doped region includes a first dopant and a second dopant, where the second dopant is from the growth region. A method of forming a semiconductor device includes increasing a temperature during exposure to at least one of dopant(s) or agent(s) to form an active region adjacent a channel, where the active region includes a repaired doped region and a growth region over the repaired doped region.

Abstract: A direction control method for the self-balancing electric vehicle and electric vehicle using the same are disclosed in the present invention.

Abstract: A capacitive fingerprint sensor includes a compensation memory which stores a direct current offset parameter and a gain compensation parameter of each sensing unit of a capacitive sensing array. Therefore, the above-mentioned capacitive fingerprint sensor is able to individually compensate sensing signals measured by each the sensing unit and the sensing signals measured by each sensing unit have better uniformity and signal to noise ratio (SNR).

Abstract: Self-aligned contacts are provided. In an embodiment the self-aligned contacts are formed by partially removing a first dielectric material from adjacent to a gate electrode and fully removing a second dielectric material from adjacent to the gate electrode. A conductive material is deposited into the regions of the removed first dielectric material and the second dielectric material, and the conductive material and metal gates are recessed below a spacer. A dielectric layer is deposited over the recessed conductive material and the recessed metal gates, and the self-aligned contacts are formed through the dielectric layer.

Abstract: A capacitive fingerprint sensor includes a compensation memory which stores a direct current offset parameter and a gain compensation parameter of each sensing unit of a capacitive sensing array. Therefore, the above-mentioned capacitive fingerprint sensor is able to individually compensate sensing signals measured by each the sensing unit and the sensing signals measured by each sensing unit have better uniformity and signal to noise ratio (SNR).

Abstract: An integrated circuit transistor structure includes a semiconductor substrate, a first SiGe layer in at least one of a source area or a drain area on the semiconductor substrate, and a channel between the source area and the drain area. The first SiGe layer has a Ge concentration of 50 percent or more.

Abstract: A capacitive fingerprint sensor includes a plate, a frame, a capacitive fingerprint sensor chip and a package body. The plate comprises a first surface, an opposite second surface and a plurality of first conductive pads arranged on the first surface. A plurality of second conductive pads and third conductive pads are respectively arranged on opposite surfaces of the frame, wherein the second conductive pads are electrically connected with the corresponding first conductive pads and third conductive pads. The capacitive fingerprint sensor chip is disposed at the central area of the frame by a flip chip manner and electrically connected with the first conductive pads. The package body is filled in the central area of the frame to cover the chip. The above-mentioned sensor has a flat sensing surface with wear resistance and better ESD toleration. A package method of the above-mentioned sensor is also disclosed.

Abstract: A semiconductor/dielectric interface having reduced interface trap density and a method of manufacturing the interface are disclosed. In an exemplary embodiment, the method of forming a semiconductor device includes receiving a substrate and forming a termination layer on a top surface of the substrate. The termination layer includes at least one of hydrogen, deuterium, or nitrogen. The method further includes depositing a dielectric layer on the termination layer such that the depositing of the dielectric layer does not disrupt the termination layer. The termination layer may be formed by a first deposition process that deposits a first material of the termination layer and a subsequent deposition process that introduces a second material of the termination layer into the first material. The termination layer may also be formed by a single deposition process that deposits both a first material and a second material of the termination layer.

Abstract: An integrated circuit includes a core area. The core area has at least one edge region and a plurality of transistors disposed in the edge region. A plurality of dummy structures are disposed outside the core area and adjacent to the at least one edge region. Each channel of the transistors in a channel width direction faces at least one of the dummy structures.

Abstract: Crystalline forms of pemetrexed diacid are provided (Forms 1 and 2) which are readily produced for either laboratory-scale or industrial scale. Processes for the preparation of Forms 1 and 2 are also provided.

Abstract: An electric system including a first wireless apparatus, a display apparatus and a second wireless apparatus is provided. A first information is encrypted to be a first encrypted information and sent wirelessly by the first wireless apparatus. The display apparatus includes a display unit and a wireless communication unit electrically connected to the display unit. The wireless communication unit receives the first encrypted information and cause the display unit to display a first representative information corresponding to the first encrypted information. The first representative information and the first encrypted information are different. The second wireless apparatus reads the first encrypted information by the wireless communication unit, and the first encrypted information is decrypted to be the first encrypted information by the second wireless apparatus.

Abstract: A portable NDIR breath acetone measurement apparatus includes a portable housing formed with an optical cavity, which is housed in a receiving chamber for containing a gas sample taken from an exhaled breath of a human subject. A control unit controls the temperature in the receiving chamber to a desired temperature, and controls an IR emitter disposed in the receiving chamber to stably emit IR spectrum radiation propagating along a zigzag path toward an IR detector, which is operated at the desired temperature to generate, in response to detection of the IR spectrum radiation, an IR signal that is processed and analyzed by a signal processing unit to obtain a measurement result indicative of the concentration of acetone gas contained in the gas sample.

Abstract: A method for forming a transistor is provided. The method includes: forming a channel layer over a substrate; forming a barrier layer between the channel layer and the substrate; forming a recess that extends into the barrier layer through the channel layer; and forming a source layer in the recess.

Abstract: Crystalline forms of pemetrexed diacid are provided (Forms 1 and 2) which are readily produced for either laboratory-scale or industrial scale. Processes for the preparation of Forms 1 and 2 are also provided.

Abstract: An illumination system including at least one laser source, at least one anisotropic light expanding element and a wavelength conversion element is provided. The at least one laser source emits a laser beam. The at least one anisotropic light expanding element is disposed on the transmission path of the laser beam and causes the laser beam to expand along a light expanding direction. The light expanding direction is substantially parallel to the slow axis of the laser beam. The wavelength conversion element is disposed on the transmission path of the laser beam. A projection apparatus is also provided.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: An illumination system including a coherent light source device, a light delivery module, and a light wavelength conversion module is provided. The coherent light source device includes a light emitting source and a light collimating element. The light emitting source is adapted to emit at least one coherent light beam. The light collimating element is located on a transmission path of the at least one coherent light beam from the light emitting source and collimates the at least one coherent light beam. The light delivery module is located on a transmission path of at least one coherent light beam from the light collimating element and includes a first lens. The first lens has a lens array surface adapted to diverge any of the coherent light beam from the light collimating element. A projection apparatus is also provided.