Abstract: A method comprises forming a source/drain region on a substrate; forming a dielectric layer over the source/drain region; forming a contact hole in the dielectric layer; forming a contact hole liner in the contact hole; removing a first portion of the contact hole liner to expose a sidewall of the contact hole; etching the exposed sidewall of the contact hole to laterally expand the contact hole; and forming a contact plug in the laterally expanded contact hole.

Abstract: A three-dimensional electronic component includes a first surface, a second surface, a third surface, and a fourth surface, and an antenna structure. The antenna structure includes a first radiating metal portion, a second radiating metal portion, an adjusting metal branch, a first ground connection portion, a second ground connection portion, a feed point, and a ground point. The first radiating metal portion on the first surface extends to the second surface. The second radiating metal portion on the first surface extends to the third surface. A gap is between the first radiating metal portion and the second radiating metal portion. The adjusting metal branch on the first surface is connected to the first radiating metal portion. The feed point on the first radiating metal portion is close to the gap. The ground point on the second radiating metal portion is close to the gap.

Abstract: An antenna device disposed on a side frame of a metal case. The antenna device includes a first slot, a dielectric substrate, a feeding metal portion, a ground portion, and a feeding source. The first slot is on the side frame, so that a part of the side frame surrounded by the first slot serves as a radiating metal portion. The dielectric substrate includes a first surface and a second surface and is disposed on the radiating metal portion through the first surface. The feeding metal portion is on the second surface of the dielectric substrate, so that a vertical projection of the feeding metal portion overlaps with the radiating metal portion. The ground portion is on the second surface of the dielectric substrate and connected to the metal case. The feeding source is on the second surface and connected to the feeding metal portion and the ground portion.

Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.

Abstract: Provided are a chimeric antigen receptor capable of targeting B7-H3, a nucleic acid molecule encoding the chimeric antigen receptor, a nucleic acid construct comprising the nucleic acid molecule, an immune effector cell expressing the chimeric antigen receptor, and use thereof. The chimeric antigen receptor comprises an anti-B7-H3 binding domain, a hinge region, a transmembrane domain and a signal transduction domain. Further provided are a composition and a method for diagnosing, treating or preventing tumors that express B7-H3.

Abstract: Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.

Abstract: Disclosed are a high-precision semi-automatic image data labeling method, an electronic apparatus and a non-transitory computer-readable storage medium. The high-precision semi-automatic image data labeling method may include: displaying a to-be-labeled image, the to-be-labeled image comprising a selected area and an unselected area; acquiring a coordinate point of the unselected area and a first range value; executing a grabcut algorithm based on the coordinate point of the unselected area and the first range value acquired, and obtaining a binarized image divided by the grabcut algorithm; executing an edge tracking algorithm on the binarized image to acquire current edge coordinates; updating a local coordinate set based on the current edge coordinates acquired; updating the selected area of the to-be-labeled image based on the local coordinate set acquired.

Abstract: The present invention provides to a system and a method for generating a performance value of a process module, such that the process module includes a plurality of sub-process modules, such that the process module is categorised into a category of a plurality of categories. The method includes retrieving a performance value for each of the plurality of sub-process modules, retrieving the category of the process module, generating the performance value of the process module based on the category of the process module, such that the performance value of the process module is generated from the performance values of the plurality of sub-process modules. Further, the present invention relates to a system and a method for identifying at least one bottleneck in a process module.

Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary interconnect structure includes a conductive feature that includes cobalt and a via disposed over the conductive feature. The via includes a first via barrier layer disposed over the conductive feature, a second via barrier layer disposed over the first via barrier layer, and a via bulk layer disposed over the second via barrier layer. The first via barrier layer includes titanium, and the second via barrier layer includes titanium and nitrogen. The via bulk layer can include tungsten and/or cobalt. A capping layer may be disposed over the conductive feature, where the via extends through the capping layer to contact the conductive feature. In some implementations, the capping layer includes cobalt and silicon.

Abstract: Disclosed are a semi-automatic image data labeling method, an electronic apparatus and a non-transitory computer-readable storage medium. The semi-automatic image data labeling method may include: displaying a to-be-labeled image, the to-be-labeled image comprising a selected area and an unselected area; acquiring a coordinate point of the unselected area and a first range value; executing a grabcut algorithm based on the coordinate point of the unselected area and the first range value acquired, and obtaining a binarized image divided by the grabcut algorithm; executing an edge tracking algorithm on the binarized image to acquire current edge coordinates; updating a local coordinate set based on the current edge coordinates acquired; updating the selected area of the to-be-labeled image based on the local coordinate set acquired.

Abstract: 3D printing slicing methods, apparatuses, devices, and storage mediums are disclosed. In an embodiment, a 3D printing slicing method includes the following steps: (1) acquiring a 3D model and a target texture picture; (2) obtaining a first model and obtaining a first picture; (3) establishing a mapping set between the first model and the first picture; (4) slicing a target layer of the first model by a slice plane to obtain at least one intersection point; (5) looking up at least one mapping point corresponding to the at least one intersection point in the first picture according to the mapping set, and obtaining corresponding outer contour points by revising coordinates of the at least one intersection point; and (6) obtaining an outer contour boundary line of the target layer by connecting the outer contour points successively.

Abstract: Methods, systems, and storage media for controlling a fast-moving path of a printer nozzle. In some embodiments, a method for controlling fast movement of a printer nozzle includes the following steps. (1) Obtaining a start position and an end position. The start position is a position of a fast-moving start point of the printer nozzle, and the end position is a position of a fast-moving end point of the printer nozzle. (2) Determining an optimal fast-moving path on a horizontal plane corresponding to a slice of a print target according to the start position and the end position, so that a length of the fast-moving path outside a polygon in the slice is the shortest. (3) Controlling the printer nozzle to move relative to a base of the printer according to the optimal fast-moving path on the horizontal plane.

Abstract: Some embodiments of the disclosure provide a flatness detection device. In an embodiment, the flatness detection device includes a back plate, an electromagnet, a cross beam, a probe, and a limiting frame. The limiting frame and the electromagnet are provided side by side on the back plate. The cross beam is located above the limiting frame and the electromagnet. The probe vertically penetrates the cross beam and the limiting frame. A spring is provided between the cross beam and the electromagnet. The spring is movable in a vertical direction by a guide, the movement being at least one of compression and extension.

Abstract: 3D printing slicing methods, apparatuses, devices, and storage mediums are disclosed. In an embodiment, a 3D printing slicing method includes the following steps: (1) acquiring a 3D model and a target texture picture; (2) obtaining a first model and obtaining a first picture; (3) establishing a mapping set between the first model and the first picture; (4) slicing a target layer of the first model by a slice plane to obtain at least one intersection point; (5) looking up at least one mapping point corresponding to the at least one intersection point in the first picture according to the mapping set, and obtaining corresponding outer contour points by revising coordinates of the at least one intersection point; and (6) obtaining an outer contour boundary line of the target layer by connecting the outer contour points successively.

Abstract: Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.

Abstract: An electronic device is provided, including: a plurality of antennas, a switch, a sensor, a wireless communication transceiver, and a processor, electrically connected to antennas, the switch, the sensor, and the wireless communication transceiver, and configured to execute an antenna selection procedure according to a scenario of the electronic device, to connect at least one of the antennas to the sensor or the wireless communication transceiver through the switch.

Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary interconnect structure includes a conductive feature that includes cobalt and a via disposed over the conductive feature. The via includes a first via barrier layer disposed over the conductive feature, a second via barrier layer disposed over the first via barrier layer, and a via bulk layer disposed over the second via barrier layer. The first via barrier layer includes titanium, and the second via barrier layer includes titanium and nitrogen. The via bulk layer can include tungsten and/or cobalt. A capping layer may be disposed over the conductive feature, where the via extends through the capping layer to contact the conductive feature. In some implementations, the capping layer includes cobalt and silicon.

Abstract: A semiconductor device includes. A first epi-layer and a second epi-layer are each located in a first region of the semiconductor device. A first dielectric fin is located between the first epi-layer and the second epi-layer. The first dielectric fin has a first dielectric constant. A third epi-layer and a fourth epi-layer are each located in a second region of the semiconductor device. A second dielectric fin is located between the third epi-layer and the fourth epi-layer. The second dielectric fin has a second dielectric constant that is less than the first dielectric constant.