Abstract: A method comprises forming a source/drain region on a substrate; forming a dielectric layer over the source/drain region; forming a contact hole in the dielectric layer; forming a contact hole liner in the contact hole; removing a first portion of the contact hole liner to expose a sidewall of the contact hole; etching the exposed sidewall of the contact hole to laterally expand the contact hole; and forming a contact plug in the laterally expanded contact hole.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate; and a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, the dielectric material of the isolation feature extending from the semiconductor substrate to the contact feature.

Abstract: Discharge heat preserving methods and devices for a 3D printer are disclosed. In some embodiments, a hot airflow is blown to a discharge outlet (111) of a nozzle device (110) mounted on the 3D printer to form a heat preserving area at the discharge outlet (111) of the nozzle device (110). A printing material discharged from the discharge outlet (111) of the nozzle device (110) stays in the heat preserving area for 2-10 s. The hot airflow is blown to the discharge outlet (111) of the nozzle device (110) from a lateral direction of the nozzle device (110). In other embodiments, the printing material discharged from the discharge outlet (111) of the nozzle device (110) stays in the heat preserving area for 3-6 s.

Abstract: A switching device for double nozzles of a 3D printer, which includes two transmission blocks, a rotary part and two spring parts. The two transmission blocks are in mirror image structures with each other and are respectively mounted on two nozzle devices; each transmission block is provided with a pressure supporting and transmiting portion, and the pressure supporting and transmiting portion includes a pressing-down stopping portion, a pressure transmiting portion, and a restoring stopping portion which are connected in sequence; the rotary part is connected to the case and is provided with two pressing parts; the two spring parts respectively sleeve the two nozzle devices, and the spring part supports the corresponding transmission block; the rotary part can rotate in a reciprocating manner, the rotary part drives the pressing parts to move on the two pressure supporting and transmiting portions.

Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.

Abstract: A method includes forming a transistor, which includes forming a dummy gate stack over a semiconductor region, and forming an Inter-Layer Dielectric (ILD). The dummy gate stack is in the ILD, and the ILD covers a source/drain region in the semiconductor region. The method further includes removing the dummy gate stack to form a trench in the first ILD, forming a low-k gate spacer in the trench, forming a replacement gate dielectric extending into the trench, forming a metal layer to fill the trench, and performing a planarization to remove excess portions of the replacement gate dielectric and the metal layer to form a gate dielectric and a metal gate, respectively. A source region and a drain region are then formed on opposite sides of the metal gate.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate; and a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, the dielectric material of the isolation feature extending from the semiconductor substrate to the contact feature.

Abstract: A semiconductor device includes a substrate, an inter-layer dielectric layer, a contact plug, and a contact hole liner. The substrate has a source/drain region. The inter-layer dielectric layer is over the substrate and has a contact hole therein. The contact plug is electrically connected to the source/drain region through the contact hole of the inter-layer dielectric layer. The contact hole liner extends between the contact plug and a sidewall of a first portion of the contact hole. The contact hole liner terminates prior to reaching a second portion of the contact hole. The first portion is between the second portion and the source/drain region.

Abstract: A semiconductor structure can include a resistor on a substrate formed simultaneously with other devices, such as transistors. A diffusion barrier layer formed on a substrate is patterned to form a resistor and barrier layers under a transistor gate. A filler material, a first connector, and a second connector are formed on the resistor at the same manner and time as the gate of the transistor. The filler material is removed to form a resistor on a substrate.

Abstract: Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.

Abstract: Switching devices for a printing mode of a 3D printer are disclosed. In some embodiments, the switching devices includes: a component platform with at least two platform bodies (200); at least two handpiece guiding parts (110); at least two handpiece guiding parts (110); at least two platform guiding parts (210); at least two handpiece transmission mechanisms (120); a handpiece drive mechanism configured to drive the handpiece transmission mechanisms (120) to move synchronously; at least two platform transmission mechanisms (220); and a platform drive mechanism configured to drive the platform transmission mechanisms (220) to move synchronously.

Abstract: A heat-dissipating module having an elastic mounting structure includes a carrier circuit board, a main circuit board, a heat dissipating module, and a plurality of elastic mounting components configured to mount mounting holes of the carrier circuit board and mounting grooves of the heat dissipating module in series, so as to fix the carrier circuit board, the main circuit board and the heat dissipating module. As a result, the plurality of elastic mounting components can provide stress buffer and good bonding effect for the thermally conductive device of the heat dissipating module bonded on an upper surface of the heat source device.

Abstract: An elastic adjustable brake pad for use in a train, comprising a brake pad frame (1) provided with a fourth through hole (18), a brake block assembly, and a spiral compression spring (6); the brake block assembly comprises a brake block (16), a rivet (4), a Belleville spring (5), and a rivet sleeve (3), the brake block (16) comprising a friction block (10) and a static sheet steel back (7) fixedly mounted together, the rivet (4) passing through the brake block (16) and being sleeved in turn by the Belleville spring (5) and the rivet sleeve (3); the fourth through hole (18) is a stepped counterbore, and the rivet (4) in the brake block (16) penetrates the fourth through hole (18) and extends outward therefrom, the spiral compression spring (6) being sleeved over the outside of the rivet sleeve (3), and the outer side of one end of the rivet sleeve (3) being provided with a clamping groove clamped to an elastic retainer ring (2), one end of the spiral compression spring (6) abutting a step on which a secondary

Abstract: An exemplary method includes forming a hard mask layer over an integrated circuit layer and implanting ions into a first portion of the hard mask layer without implanting ions into a second portion of the hard mask layer. An etching characteristic of the first portion is different than an etching characteristic of the second portion. After the implanting, the method includes annealing the hard mask layer. After the annealing, the method includes selectively etching the second portion of the hard mask layer, thereby forming an etching mask from the first portion of the hard mask layer. The method can further include using the etching mask to pattern the integrated circuit layer.

Abstract: Certain aspects of the present disclosure relate to methods and apparatus for improving inter-Radio Access Technology (RAT) measurements. A user equipment (UE) determines, while in a connected state Discontinuous Reception (CDRX) mode in a first cell of a first Radio Access Technology Network (RAT), that a second cell of a second RAT is to be measured. The UE schedules at least two operational periods related to transitioning between ON and OFF states of the CDRX mode to overlap, to increase a period available for measuring signals in the second cell.

Abstract: An electronic device is provided. The electronic device includes a metal housing, an insulation element, and an antenna unit. The insulation element is disposed on the metal housing and includes a first heat dissipation hole. The antenna unit is disposed on the insulation element and includes a radiation portion and a feeding portion. The radiation portion is composed of a conductor. The feeding portion is electrically connected to the radiation portion and a grounding plane. In this way, according to the electronic device, space configuration inside the electronic device is saved and a shielding effect of the metal housing is prevented from affecting stability of sending and receiving a signal.

Abstract: Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.

Abstract: A throat structure for a 3D printer according to an embodiment includes a cold zone for heat dissipation, a hot zone for heating, and a thermal insulation zone. The cold zone for heat dissipation has a titanium throat outer tube body and a teflon throat inner tube body, and the teflon throat inner tube body is socketed in the titanium throat outer tube body. The hot zone for heating has a heating block connection zone and a nozzle connection zone. The heating block connection zone is located on an external side of the hot zone for heating, and the nozzle connection zone is located at a lower part of the hot zone for heating. The thermal insulation zone is connected to the titanium throat outer tube body such that an area of the hot zone for heating is reduced and a printing material extrusion amount is controlled.

Abstract: A thermal module mounting structure includes a thermal module having a first bracket with mounting holes fixedly mounted at each of two opposite sides of a bottom wall thereof, a circuit board having one or multiple heat source components located on a top wall thereof and a second bracket with through holes fixedly mounted at each of two opposite sides of the top wall, and a plurality of fasteners respectively inserted through the through holes of the second brackets and fastened to the respective mounting holes of the first brackets to secure the circuit board to the thermal module in a vertically floatable manner and to keep the heat source components in contact with the bottom wall of the thermal module.

Abstract: A device includes a semiconductor fin over a substrate, a gate dielectric on sidewalls of the semiconductor fin, and a gate electrode over the gate dielectric. A source/drain region is on a side of the gate electrode. A dislocation plane is in the source/drain region.