Abstract: A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) having a deep pseudo buried layer is disclosed. The SiGe HBT includes isolation structures formed in trenches, first pseudo buried layers and second pseudo buried layers, and a collector region. The first pseudo buried layers are formed under the respective trenches and the second pseudo buried layers are formed under the first pseudo buried layers, with each first pseudo buried layer vertically contacting with a second pseudo buried layer. The second pseudo buried layers are laterally connected to each other, and the collector region is surrounded by the trenches, the first pseudo buried layers and the second pseudo buried layers. The cross section of each of the trenches has a regular trapezoidal shape, namely, each trench's width of its top is smaller than that of its bottom. A manufacturing method of the SiGe HBT is also disclosed.

Abstract: A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, which includes: two isolation structures each being formed in a trench; a set of three or more pseudo buried layers formed under each trench with every adjacent two pseudo buried layers of the set being vertically contacted with each other; and a collector region. In this design, the lowermost pseudo buried layers of the two sets are laterally in contact with each other, and the collector region is surrounded by the two isolation structures and the two sets of pseudo buried layers. As the breakdown voltage of a SiGe HBT according to the present invention is determined by the distance between an uppermost pseudo buried layer and the edge of an active region, SiGe HBTs having different breakdown voltages can be achieved. A manufacturing method of the SiGe HBT is also disclosed.

Abstract: A structure for picking up a buried layer is disclosed. The buried layer is formed in a substrate and has an epitaxial layer formed thereon. One or more isolation regions are formed in the epitaxial layer. The structure for picking up the buried layer includes a contact-hole electrode formed in each of the isolation regions. A bottom of the contact-hole electrode is in contact with the buried layer. As the structure of the present invention is formed in the isolation region without occupying any portion of the active region, its size is much smaller than that of a sinker region of the prior art. Therefore, device area is tremendously reduced. Moreover, as the contact-hole electrode picks up the buried layer by a metal contact, the series resistance of the device can be greatly reduced. A method of forming the above structure is also disclosed.

Abstract: A bipolar transistor is disclosed, which includes a collector region, a base region, an emitter region and field plates. Each field plate is present in a structure of a flat sidewall covering one side face of the active region so that it also covers the collector region from one side. The field plate has its surface parallel to the side face of the active region and is isolated from the side face of the active region by a pad oxide layer. The field plate has its top lower than the surface of the active region. The bipolar transistor is capable of improving the breakdown voltage of the device without increasing the collector resistance or deteriorating the frequency characteristic. A method of manufacturing bipolar transistor is also disclosed.

Abstract: A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, in which a shallow trench is formed of a first shallow trench and a second shallow trench vertically joined together in the active region, the second shallow trench being located directly under the first shallow trench and having a width less than that of the first shallow trench; a pseudo buried layer is formed surrounding the bottom and side walls of the second shallow trench and is in contact with the collector region to serve as a connection layer of a collector; a deep hole contact is formed in the shallow trench and is in contact with the pseudo buried layer to pick up the collector. A SiGe HBT manufacturing method is also disclosed. The present invention is capable of improving the cut-off frequency of a SiGe HBT.

Abstract: A method of inserting dummy patterns is provided. The method includes: determining an applicable area in which dummy patterns shall be inserted and an inapplicable area in which dummy patterns shall not be inserted on a chip; and inserting dummy patterns starting from one side of the inapplicable area and arranging the inserted dummy patterns into circles. The method of the present invention ensures that dummy patters are preferentially inserted around the device that requires protection by dummy patterns, so that good uniformity of chip pattern densities is guaranteed and within-wafer uniformity is improved, thus improving the yield and performance of semiconductor devices.

Abstract: A synthesis method of Sigma-Delta modulator capable of relaxing circuit specification and reducing power consumption, comprising the following steps: firstly, set a target bandwidth and a target performance; upon obtaining a Noise Transfer Function (NTF), perform coefficient synthesis a first time, to ascertain a plurality sets of first performance results corresponding to said NTF, and obtain a plurality sets of first circuit specifications fulfilling said said target performance, through analyzing circuit non-ideal effect of said first performance results. Next, increase an oversampling ratio of parameters, to obtain a plurality sets of second performance results, and a plurality sets of second circuit specifications. Then, increase quantizer bit number, and increase attenuation quantity, to obtain a plurality sets of third circuit specifications. Finally, compare said first, second and third circuit specifications, to select one of greatest variation to perform calibrations.

Abstract: In a method 1100 of linking model instances to packages, a service instantiation request is received 1110. The service instantiation request is associated 1120 with service model instance. Linked instances are generated 1130 between the service model instance and available packages. The linked instances are evaluated 1140. Based on the evaluating, a most efficient linked instance of the linked instances is selected 1150 to include in a bound package model of the service instantiation request.

Abstract: The present invention discloses a sigma-delta modulator architecture capable of automatically improving dynamic range and a method for the same. Based on the concept that different dynamic ranges of a sigma-delta modulator can be obtained via adjusting the signal power gain thereof, the present invention provides a novel algorithm to implement an automation program. The present invention finds out several sets of dynamic-range curves to improve the overall dynamic range. Via a high-level sigma-delta modulator architecture, the present invention can calculate the required feedforward coefficients. Further, the present invention install in the sigma-delta modulator architecture with four additional components, including a peak detection unit, a comparator unit, a digital coefficient control unit and a switch unit, to dynamically detect the output of the sigma-delta modulator and dynamically modify the feedforward coefficient of the sigma-delta modulator.

Abstract: The present invention discloses a sigma-delta modulator architecture capable of automatically improving dynamic range and a method for the same. Based on the concept that different dynamic ranges of a sigma-delta modulator can be obtained via adjusting the signal power gain thereof, the present invention provides a novel algorithm to implement an automation program. The present invention finds out several sets of dynamic-range curves to improve the overall dynamic range. Via a high-level sigma-delta modulator architecture, the present invention can calculate the required feedforward coefficients. Further, the present invention install in the sigma-delta modulator architecture with four additional components, including a peak detection unit, a comparator unit, a digital coefficient control unit and a switch unit, to dynamically detect the output of the sigma-delta modulator and dynamically modify the feedforward coefficient of the sigma-delta modulator.

Abstract: A semiconductor chip package and method of making the same. A first chip unit includes a first substrate and a first IC chip electrically connected to the first substrate. A second chip unit includes a second substrate and a second IC chip electronically connected to the second substrate. An adhesive material is provided on a surface of the first IC chip and the second chip unit is mounted onto the surface of the first chip unit including the adhesive material so that at least a portion of the second structure is encapsulated by the adhesive material, thereby providing some encapsulation in the same step as mounting. The first chip unit and the second chip unit may be separated by a spacer which may also provide an electrical connection.

Abstract: A signal processing system includes a phase-locked loop to provide an output signal used, for example, as a delta sigma modulator operating clock signal. In at least one embodiment, a frame clock that provides synchronization for one or more blocks of data is used by the phase-locked loop as a reference signal. Utilizing the frame clock as the reference signal allows the signal processing system to reduce the number of clock signals present in the signal processing system. In another embodiment, a phase-locked loop includes a loop filter that utilizes a sample and reset circuit, a feed forward integrator, and a feed forward stabilizer to provide a low frequency phase-locked loop bandwidth. In at least one embodiment, the feed forward integrator amplifies capacitance of the sample and reset circuit, which reduces the size of loop filter capacitors and, thus, allows on-chip capacitor integration.

Abstract: A tooth extraction assisting device includes an ultrasonic machine, an ultrasonic hand piece, and 5 different insert tips that are hook-on to the hand piece. The ultrasonic machine outputs a signal with high frequency oscillation. This high frequency oscillation signal received by the ultrasonic hand piece generates a high frequency vibration of the insert tip. A set of 5 different configuration insert tips was designed for a precision surgical cut at the coronal portion of the periodontal ligament around tooth to be extracted. This device also provides a better visibility at the surgical area with the cavitation effect. With the help of the tooth extraction assisting device dental clinician is able to perform tooth extraction with less chair-time without damaging to the buccal alveolar process which increases the chance of immediate implant placement at the same appointment.

Abstract: A semiconductor chip package and method of making the same. A first chip unit includes a first substrate and a first IC chip electrically connected to the first substrate. A second chip unit includes a second substrate and a second IC chip electronically connected to the second substrate. An adhesive material is provided on a surface of the first IC chip and the second chip unit is mounted onto the surface of the first chip unit including the adhesive material so that at least a portion of the second structure is encapsulated by the adhesive material, thereby providing some encapsulation in the same step as mounting. The first chip unit and the second chip unit may be separated by a spacer which may also provide an electrical connection.

Abstract: A gain or input volume controller and method includes a modified R2R ladder network having a number of R2R branches, switches coupled respectively to the R2R branches, and a switch controller for respectively controlling the switches to control and provide an overall gain value for a signal. The switch controller further includes a mapper for mapping a gain control signal to the switches wherein the gain control signal respectively activates or deactivates the switches. A fine gain control stage provides a fine gain control of the overall gain value. A coarse gain control stage is coupled to the fine gain control stage. The coarse gain control stage includes the modified R2R ladder network and provides a coarse gain control of the overall gain value.

Abstract: A semiconductor chip package and method of making the same. A first chip unit includes a first substrate and a first IC chip electrically connected to the first substrate. A second chip unit includes a second substrate and a second IC chip electronically connected to the second substrate. An adhesive material is provided on a surface of the first IC chip and the second chip unit is mounted onto the surface of the first chip unit including the adhesive material so that at least a portion of the second structure is encapsulated by the adhesive material, thereby providing some encapsulation in the same step as mounting. The first chip unit and the second chip unit may be separated by a spacer which may also provide an electrical connection.

Abstract: A gain or input volume controller and method includes a modified R2R ladder network having a number of R2R branches, switches coupled respectively to the R2R branches, and a switch controller for respectively controlling the switches to control and provide an overall gain value for a signal. The switch controller further includes a mapper for mapping a gain control signal to the switches wherein the gain control signal respectively activates or deactivates the switches. A fine gain control stage provides a fine gain control of the overall gain value. A coarse gain control stage is coupled to the fine gain control stage. The coarse gain control stage includes the modified R2R ladder network and provides a coarse gain control of the overall gain value.

Abstract: An IEEE Std. 1149.1 boundary scan circuit which is capable of performing built-in self-testing includes a logic circuit, cascaded input boundary-scan cells that form an input boundary-scan register connected to input nodes of the logic circuit, cascaded output boundary-scan cells that form an output boundary-scan register connected to output nodes of the logic circuit, and a test access port system for controlling operation of the input and output boundary-scan cells. The test access port system provides a built-in self-test control signal to the input and output boundary-scan cells when executing built-in self-testing. The input boundary-scan register is reconfigurable to operate as a test pattern generator that provides test patterns to the logic circuit for a predetermined number of clock cycles upon receipt of the built-in self-test control signal.