Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to improve the efficacy of fertilizer usage and absorption by cotton plants. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then infused to the fertilized soil in which the cotton seeds are planted and grown. Optionally, the KHP solution can be diluted by water, as disclosed in the specification, for applying to the fertilized soil around the cotton plants.

Abstract: A connector assembly includes a printed circuit board having a first electrical pin and a second electrical pin positioned on the printed circuit board, a socket connector including an insulation housing having a first socket and a second socket, and a locker movable between a first position and a second position. The first electrical pin is removably inserted into the first socket and the second electrical pin is removably inserted into the second socket. The insulation housing has a locking cavity communicated with the first socket. The locker engages with the first electrical pin to lock the first electrical pin in the first socket in the first position, and the locker disengages from the first electrical pin to release the locking of the first electrical pin in the second position.

Abstract: In some embodiments, the present disclosure relates to a method that includes aligned a first wafer with a second wafer. The second wafer is spaced apart from the first wafer. The first wafer is arranged on a first electrostatic chuck (ESC). The first ESC has electrostatic contacts that are configured to attract the first wafer to the first ESC. Further, the second wafer is brought toward the first wafer to directly contact the first wafer at an inter-wafer interface. The inter-wafer interface is localized to a center of the first wafer. The second wafer is deformed to gradually expand the inter-wafer interface from the center of the first wafer toward an edge of the first wafer. The electrostatic contacts of the first ESC are turned OFF such that the first and second wafers are bonded to one another by the inter-wafer interface.

Abstract: Disclosed are a semi-automatic image data labeling method, an electronic apparatus and a non-transitory computer-readable storage medium. The semi-automatic image data labeling method may include: displaying a to-be-labeled image, the to-be-labeled image comprising a selected area and an unselected area; acquiring a coordinate point of the unselected area and a first range value; executing a grabcut algorithm based on the coordinate point of the unselected area and the first range value acquired, and obtaining a binarized image divided by the grabcut algorithm; executing an edge tracking algorithm on the binarized image to acquire current edge coordinates; updating a local coordinate set based on the current edge coordinates acquired; updating the selected area of the to-be-labeled image based on the local coordinate set acquired.

Abstract: Packaged semiconductor devices including heat-dissipating structures and methods of forming the same are disclosed. In an embodiment, a semiconductor package includes a semiconductor die including a substrate, a front-side interconnect structure on a front-side of the substrate, and a backside interconnect structure on a backside of the substrate opposite the front-side interconnect structure; a support die disposed on the front-side interconnect structure; a heat-dissipating structure on the support die, the heat-dissipating structure being thermally coupled to the semiconductor die and the support die; a redistribution structure on the backside interconnect structure opposite the substrate, the redistribution structure being electrically coupled to the semiconductor die; and an encapsulant on the redistribution structure and adjacent to side surfaces of the semiconductor die, the support die, and the heat-dissipating structure.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip comprising a memory cell. The memory cell is disposed within a dielectric structure that overlies a substrate. The memory cell comprises a data storage structure disposed between a bottom electrode and a top electrode. An upper conductive structure is disposed in the dielectric structure and on the top electrode. The upper conductive structure comprises a protrusion disposed below an upper surface of the top electrode. A sidewall spacer structure is disposed around the memory cell. The sidewall spacer structure comprises a first sidewall spacer layer around the data storage structure and a second sidewall spacer layer abutting the first sidewall spacer layer. The protrusion contacts the second sidewall spacer layer.

Abstract: A capillary array includes a capillary region, including capillaries of a first glass, which are disposed in an axis-parallel manner. A low refractive index layer is disposed on an inner wall of each of the capillaries, the refractive index of each low refractive index layer being less than a refractive index of a liquid scintillator. A second glass material is disposed between adjacent capillaries. A softening point of the first glass is T1, a softening point of second glass is T2, and a value of T1 minus T2 is in a range from 30° C. to 50° C. A thermal expansion coefficient of the first glass is ?1. An edge covering region is disposed on an outer side of the capillary region and makes contact with an outer side face of the capillary region, wherein a material of the edge covering region is a third glass.

Abstract: A measuring system and a measuring method of an antenna pattern based on near field to far field transformation (NFTF) are provided. The measuring system includes a probe antenna, a reference antenna, and a control system. The probe antenna measures an electric field radiated by an antenna under test to obtain electric field information. The reference antenna measures the electric field to obtain a reference phase. The control system is coupled to the antenna under test, the probe antenna, and the reference antenna, wherein the control system applies near field focusing to the reference antenna to configure a focus point of the reference antenna on the antenna under test, and the control system performs the NFTF according to the electric field information and the reference phase to output far field patterns.

Abstract: A manufacturing method of an optical device includes: providing a lower transparent substrate; wherein the lower transparent substrate includes an upper surface; providing a quantum dot film element and a glue-material enclosure wall disposed on the upper surface; wherein the glue-material enclosure wall surrounds the quantum dot film element; providing an upper transparent substrate covering the quantum dot film element and the glue-material enclosure wall, such that the quantum dot film element and the glue-material enclosure wall are sandwiched between the lower transparent substrate and the upper transparent substrate; and cutting the lower transparent substrate and the upper transparent substrate to form a lower protective film and an upper protective film corresponding to the quantum dot film element, so as to obtain the optical device including the lower protective film, the upper protective film, the quantum dot film element, and the glue-material enclosure wall.

Abstract: A semiconductor device and method of manufacture are provided wherein semiconductor devices are attached over a semiconductor substrate. A seal ring within the semiconductor device is extended to include a first bond metal within a bonding layer and bonded to a second bond metal over the semiconductor substrate. Such a seal ring provided a more complete protection from cracking and delamination.

Abstract: A method, a network device, and a non-transitory computer-readable storage medium are described in relation to a low latency, low loss, and scalable throughput (LI4S)-triggered prioritized connection service. The LI4S-triggered prioritized connection service may enable an evolved packet data gateway (ePDG) to provision prioritized and non-prioritized tunnels with end devices via untrusted wireless local area networks. The prioritized tunnel may support LI4S or another quality of service in which the ePDG may provide prioritized data forwarding. The end device may transmit a request that includes priority data.

Abstract: A package includes a sensor die, and an encapsulating material encapsulating the sensor die therein. A top surface of the encapsulating material is substantially coplanar with or higher than a top surface of the sensor die. A plurality of sensing electrodes is higher than the sensor die and the encapsulating material. The plurality of sensing electrodes is arranged as a plurality of rows and columns, and the plurality of sensing electrodes is electrically coupled to the sensor die. A dielectric layer covers the plurality of sensing electrodes.

Abstract: A method, applied to an electronic device comprising a camera and a temperature sensor, wherein the method comprises displaying a temperature measurement interface, receiving, from a user, a temperature measurement operation, measuring, in response to the temperature measurement operation and using the temperature sensor, a first temperature of a measured object, collecting, using the camera, a picture of the measured object, determining, based on the picture, a type of the measured object, matching, based on the type, a first temperature algorithm for the measured object, and determining, based on the first temperature and first algorithm, a second temperature of the measured object.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: Disclosed are a method and an apparatus for detecting a wearing state of an earphone, an earphone, and a storage medium. The method includes: obtaining a request for detecting the wearing state of the earphone; performing audio collection by a feedback microphone of the earphone to obtain a feedback audio signal; determining a frequency of the audio, and determining a target frequency with a power meeting a preset condition in the feedback audio signal based on the frequency and an audio collection parameter of the feedback microphone; performing a power spectrum analysis on the feedback audio signal to obtain a power spectrum of the feedback audio signal; determining target power information of the target frequency from the power spectrum; and in response to the target power information being not less than a maximum power threshold value set for the target frequency, determining that the wearing state is in-ear state.

Abstract: The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

Abstract: A heat pipe comprises a flat tube and a wick structure. The flat tube includes a hollow chamber and has a front and a rear sealed ends along an axial direction. The wick structure is disposed in the hollow chamber and extended along the axial direction of the flat tube. The wick structure is divided into a front, a middle and a rear sections sequentially along the axial direction. The front section is near the front sealed end, the rear section is near the rear sealed end. The front, middle and rear sections have a maximum length parallel to the width direction, respectively. The maximum length of the front section is greater than that of the middle section, and the maximum length of the middle section is greater than that of the rear section.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.