Abstract: A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

Abstract: A first electrical connector, a second electrical connector and an electrical connector assembly are provided.

Abstract: A dummy fin described herein includes a low dielectric constant (low-k or LK) material outer shell. A leakage path that would otherwise occur due to a void being formed in the low-k material outer shell is filled with a high dielectric constant (high-k or HK) material inner core. This increases the effectiveness of the dummy fin to provide electrical isolation and increases device performance of a semiconductor device in which the dummy fin is included. Moreover, the dummy fin described herein may not suffer from bending issues experienced in other types of dummy fins, which may otherwise cause high-k induced alternating current (AC) performance degradation. The processes for forming the dummy fins described herein are compatible with other fin field effect transistor (finFET) formation processes and are be easily integrated to minimize and/or prevent polishing issues, etch back issues, and/or other types of semiconductor processing issues.

Abstract: Transistors of different types of electronic devices on the same semiconductor substrate are configured with different transistor attributes to increase the performance of the different types of electronic devices. Fin height, shallow source drain (SSD) height, source or drain width, and/or one or more other transistor attributes may be co-optimized for the different types of electronic devices by various semiconductor manufacturing processes such as etching, lithography, process loading, and/or masking, among other examples. This enables the performance of a plurality of types of electronic devices on the same semiconductor substrate to be increased.

Abstract: An electronic device is provided, and the manufacturing method of which is to stack a carrier structure on a circuit board having a reflector via a plurality of conductive elements, dispose a micro strip and an antenna layer communicatively connected to the reflector respectively on opposite sides of the carrier structure, dispose an antenna spacer on the carrier structure, cover the antenna spacer with an encapsulation layer, and form an antenna portion communicatively connected to the antenna layer on the encapsulation layer. Therefore, a better antenna performance can be obtained by disposing the micro strip on the bottom layer of the carrier structure and disposing the antenna layer on the top layer of the carrier structure.

Abstract: A biochip packaging structure includes a chip packaging layer, a redistribution layer, and a microfluidic channel. The chip packaging layer includes a resin layer including a biochip and a conductive pillar located on each of two sides of the biochip. The biochip includes a first surface flush with and exposed out of a side of the resin layer. A first end of the conductive pillar is flush with a side of the resin layer opposite the biochip. A second end of the conductive pillar is flush with the first surface of the biochip. The redistribution layer includes a metal winding electrically coupled to the biochip and the adjacent conductive pillar. The metal winding includes a first winding portion coupled to the biochip and a second winding portion coupled between the first winding portion and the conductive pillar. The second winding portion is parallel to the first surface.

Abstract: The present disclosure relates to the technical field of vehicles, and provides a vehicle and an energy conversion device and a control method therefor. The energy conversion device includes a motor controller, a bus capacitor, a first switch module, a motor, and a second switch module. By controlling the first switch module and the second switch module to be turned on/off, a motor driving circuit can be formed by a battery pack, the first switch module, the bus capacitor, the motor controller, and the motor, and a charging and discharging circuit can be formed by the battery pack, the second switch module, the motor, the motor controller, and the bus capacitor.

Abstract: The present invention is an AI vehicle with its control system, which comprises a motorcycle or an automobile, an AI device, multiple image acquisition devices, a display device, a heat dissipation device, a power supply management device, and a three-button control switch, which may be mounted on a regular motorcycle for control of license plate image acquisition, plate detection, computation control of license plate number recognition, and control of power supply management, to achieve effects of license plate number recognition and active detection when the AI motorcycle is ridden for patrol, thus achieve effects of better investigation and crime prevention mobility; further, the AI vehicle may acquire license plate number and parking information, followed by being uploaded to a roadside parking billing computing center for calculating parking fees to achieve the effect for roadside parking billing and tolling.

Abstract: Provided are an anti-bedsore adjusting and monitoring system and method. The system includes an air pressure determination module, an electric mattress and a visualization module. The air pressure determination module is configured to determine a body mass index according to a height and a weight of a target object, determine a target mattress air pressure according to the body mass index and send the target mattress air pressure to the electric mattress. The electric mattress is configured to perform inflation or deflation processing according to the target mattress air pressure, acquire a pressure value corresponding to each target position and send the pressure value to the visualization module, where the each target position is a position where a corresponding pressure sensor in the electric mattress contacts the target object. The visualization module is configured to determine guidance information corresponding to the pressure value according to the pressure value and display the guidance information.

Abstract: A method for predicting a day-ahead wind power of wind farms, comprising: constructing a raw data set based on a correlation between the to-be-predicted daily wind power, the numerical weather forecast meteorological feature and a historical daily wind power; obtaining a clustered data set and performing k-means clustering, obtaining a raw data set with cluster labels, and generating massive labeled scenes based on robust auxiliary classifier generative adversarial networks; determining the cluster label category of the to-be-predicted day based on the known historical daily wind power and numerical weather forecast meteorological feature, and screening out multiple scenes with high similarity to the to-be-predicted daily wind power based on the cluster label category; and obtaining the prediction results of the to-be-predicted daily wind power at a plurality of set times based on an average value, an upper limit value and a lower limit value of the to-be-predicted daily wind power.

Abstract: A package includes a package substrate, an interposer over and bonded to the package substrate, a first wafer over and bonding to the interposer, and a second wafer over and bonding to the first wafer. The first wafer has independent passive device dies therein. The second wafer has active device dies therein.

Abstract: Disclosed is the new use of a JAK3/JAK1/TBK1 selective inhibitor. Animal experiments have proven that the JAK3/JAK1/TBK1 selective inhibitor has significant treatment and improvement effects on autoimmune skin diseases, especially Alopecia areata and inflammatory skin diseases, such as atopic dermatitis.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: In an embodiment, a device includes: a package component including integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure over the encapsulant and the integrated circuit dies, and sockets over the redistribution structure; a mechanical brace physically coupled to the sockets, the mechanical brace having openings, each one of the openings exposing a respective one of the sockets; a thermal module physically and thermally coupled to the encapsulant and the integrated circuit dies; and bolts extending through the thermal module, the mechanical brace, and the package component.

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: An embodiment method includes: forming a semiconductor liner layer on exposed surfaces of a fin structure that extends above a dielectric isolation structure disposed over a substrate; forming a first capping layer to laterally surround a bottom portion of the semiconductor liner layer; forming a second capping layer over an upper portion of the semiconductor liner layer; and annealing the fin structure having the semiconductor liner layer, the first capping layer, and the second capping layer thereon, the annealing driving a dopant from the semiconductor liner layer into the fin structure, wherein a dopant concentration profile in a bottom portion of the fin structure is different from a dopant concentration profile in an upper portion of the fin structure.

Abstract: The present disclosure provides a method that includes providing a workpiece having a semiconductor substrate that includes a first circuit area and a second circuit area, forming a first active region in the first circuit area and a second active region on the second circuit area, forming first gate stacks on the first active region and second gate stacks on the second active region, performing a plurality of implantation processes to introduce a doping species to the first active region with a first dosage and to the second active region with a second dosage different from the first dosage, and forming first source/drain features within first source/drain regions of the first active region and second source/drain features within second source/drain regions of the second active region.

Abstract: A semiconductor structure includes a first well doped with a first dopant and a second well doped with a second dopant different from the first dopant. From a top view, the first well includes a first base extending lengthwise along a direction, and a first letter-shaped portion and a second letter-shaped portion connected to the first base. From the top view, the second well includes a second base extending lengthwise along the direction and a third letter-shaped portion connected to the second base. The third letter-shaped portion extends into the first well and is keyed to the first letter-shaped portion and the second letter-shaped portion.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.