Abstract: A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.

Abstract: A production method for chips, in which as many method steps as possible are carried out in the wafer composite, that is, in parallel for a plurality of chips disposed on a wafer. This is a method for producing a plurality of chips whose functionality is implemented on the basis of the surface layer of a substrate. In this method, the surface layer is patterned and at least one cavity is produced below the surface layer, so that the individual chip regions are connected to each other and/or to the rest of the substrate by suspension webs only, and/or so that the individual chip regions are connected to the substrate layer below the cavity via supporting elements in the region of the cavity. The suspension webs and/or supporting elements are cut when the chips are separated. The patterned and undercut surface layer of the substrate is embedded in a plastic mass before the chips are separated.

Abstract: A method for manufacturing chips (1, 2), in which at least one diaphragm (11, 12) is produced in the surface layer of a semiconductor substrate (10) spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the diaphragm (11, 12). In order to separate the chip (1, 2), the diaphragm (11, 12) is detached from the substrate composite. The method according to the present invention is characterized by metal plating of the back of the chip (1, 2) in an electroplating process before the chip is separated.

Abstract: A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the second front surface are connected via a structured adhesion promoter layer in such a way that each semiconductor chip is connected, essentially free of cavities, to a corresponding carrier substrate corresponding to a respective micromechanical component.

Abstract: In a method is for producing through contacts in thin chips, whose functionality is implemented in a layer structure starting from the surface layer of a semiconductor substrate, to separate these chips, the surface layer is structured using the layer structure and at least one cavity is produced below the surface layer, so that the individual chips are defined by trenches opening into the cavity and the individual chips are connected via support elements in the area of the cavity to the substrate below the cavity. The chips are provided with through contacts, in that firstly a contact hole, which extends through the entire layer structure of the chip and opens into a support element, is produced for each through contact. At least one dielectric layer is applied to the thus structured layer structure and in particular to the wall of the contact holes and structured in accordance with the electrical connections to be created between areas of the chip surface and at least one through contact.

Abstract: An electrically insulating sheathing for a piezoresistor and a semiconductor material are provided such that the piezoresistor is able to be used in the high temperature range, e.g., for measurements at higher ambient temperatures than 200° C. A doped resistance area is initially laterally delineated by at least one circumferential essentially vertical trench and is undercut by etching over the entire area. An electrically insulating layer is then created on the wall of the trench and the undercut area, so that the resistance area is electrically insulated from the adjacent semiconductor material by the electrically insulating layer.

Abstract: A micromechanical pressure sensor includes a first diaphragm and a second diaphragm accommodated in a shared semiconductor substrate. The two diaphragms facilitate independent pressure sensing of one or more media, by the fact that a respective pressure variable is sensed by way of the deflection of the respective diaphragm. A cap above the first diaphragm defines a hollow space that is connected to the hollow space below the second diaphragm.

Abstract: A workpiece composite includes a preform part and a gel accommodated in a recess in the preform, the recess being enclosed by at least one edge which serves as a creep barrier to prevent the gel from spreading. The at least one edge of the recess defines a termination point of at least one surface which is provided with a coating made of an oleophobic material in an area adjacent to the at least one edge.

Abstract: A manufacturing method for a micromechanical component, a corresponding composite component, and a corresponding micromechanical component are described.

Abstract: A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10?) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.

Abstract: A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

Abstract: A sensor system, in particular a pressure sensor system, having a substrate having a main extension plane, the substrate having at least one trench on a first side, and the trench being provided to produce a diaphragm area on a second side of the substrate diametrically opposite to the first side perpendicularly to the main extension plane, and a decoupling element further being integrated in the material of the diaphragm area.

Abstract: A sensor system for detecting high pressures includes a micromechanical sensor element which is situated on a support and is mounted via this support. A diaphragm is formed in the upper surface of the sensor element, the diaphragm spanning a cavern having a rear opening. The support has a passage opening and is connected to the rear side of the sensor element in such a way that the passage opening opens into the rear opening of the cavern. An annular recess is formed in the rear side of the sensor element, the annular recess being situated above the edge area of the passage opening, so that the joining surface between the sensor element and the support does not extend to the edge of the passage opening.

Abstract: A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.

Abstract: A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

Abstract: A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

Abstract: A micromechanical component, e.g., a switch, includes a substrate having at least one recess, at least two electrically conductive contact surfaces provided in the region of the recess, and an actuator. The contact surfaces are able to be brought into contact with one another for electrical conduction with the aid of the actuator.

Abstract: A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.

Abstract: A process for manufacturing a component is described. In a first manufacturing step a base structure having a substrate, a diaphragm, and a cavern region is provided. The diaphragm is oriented substantially parallel to a main plane of extension of the substrate. The cavern region is situated between the substrate and the diaphragm, and has an access opening. In a second manufacturing step, a first conductive layer is provided at least partially in the cavern region, in particular on a second side of the diaphragm facing the substrate, perpendicularly to the main plane of extension.

Abstract: The present invention relates to a manufacturing method for a micromechanical component, a corresponding composite component, and a corresponding micromechanical component.