Abstract: A method for manufacturing chips (1, 2), in which at least one diaphragm (11, 12) is produced in the surface layer of a semiconductor substrate (10) spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the diaphragm (11, 12). In order to separate the chip (1, 2), the diaphragm (11, 12) is detached from the substrate composite. The method according to the present invention is characterized by metal plating of the back of the chip (1, 2) in an electroplating process before the chip is separated.

Abstract: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

Abstract: In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a lateral surface of the anchor, and which points at an inclination away from the anchor.

Abstract: In a method is for producing through contacts in thin chips, whose functionality is implemented in a layer structure starting from the surface layer of a semiconductor substrate, to separate these chips, the surface layer is structured using the layer structure and at least one cavity is produced below the surface layer, so that the individual chips are defined by trenches opening into the cavity and the individual chips are connected via support elements in the area of the cavity to the substrate below the cavity. The chips are provided with through contacts, in that firstly a contact hole, which extends through the entire layer structure of the chip and opens into a support element, is produced for each through contact. At least one dielectric layer is applied to the thus structured layer structure and in particular to the wall of the contact holes and structured in accordance with the electrical connections to be created between areas of the chip surface and at least one through contact.

Abstract: A manufacturing method for producing a micromechanical sensor element which may be produced in a monolithically integrable design and has capacitive detection of a physical quantity is described. In addition to the manufacturing method, a micromechanical device containing such. a sensor element, e.g., a pressure sensor or an acceleration sensor, is described.

Abstract: A micromechanical sensor element (1) is provided, which has a sealed diaphragm (2) affixed in a frame (3), exhibits high sensitivity at high overload resistance and has a small size, and which allows a piezoresistive measured-value acquisition. To this end, at least one carrier element (4), which is connected to the frame (3) via at least one connection link (5), is formed in the region of the diaphragm (2). Furthermore, piezoresistors (6) for detecting a deformation are situated in the region of the connection link (5).

Abstract: An assembly and connection technology for a sensor system, including a sensor element having circuit elements integrated into the top side and a carrier for the sensor element, which is simple and robust and which does not require any further packaging measures for protecting the circuit elements and electrical terminals of the sensor elements after the isolation of the sensor elements. For this purpose, the carrier is provided with through contacts. In addition, the sensor element is installed in flip-chip technology on the carrier, so that the top side of the sensor element is at least regionally capped by the carrier and the circuit elements of the sensor element can be electrically contacted from the rear side of the carrier via the through contacts.

Abstract: A sensor system, in particular a pressure sensor system, having a substrate having a main extension plane, the substrate having at least one trench on a first side, and the trench being provided to produce a diaphragm area on a second side of the substrate diametrically opposite to the first side perpendicularly to the main extension plane, and a decoupling element further being integrated in the material of the diaphragm area.

Abstract: In the measurement of sensor elements in a wafer composite, whereby non-electric stimuli are to be applied to the sensor elements, a semiconductor wafer having a multitude of sensor elements, each sensor element having a voltage supply connection, a grounded connection, and at least one sensor signal output, is configured such that a bus system is integrated in the semiconductor wafer, to which bus system at least the grounded connections of the sensor elements are connected and via which a supply voltage may be applied to the sensor elements, and that each sensor element is equipped with at least one controllable switching element for selecting the sensor element, so that only a selected sensor element supplies a sensor signal to a diagnosis device.

Abstract: A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

Abstract: A method for producing a sensor array including a monolithically integrated circuit is described as well as a sensor array. This sensor array has a micromechanical sensor structure, in which a first partial structure which is associated with the sensor structure is produced at the same time as a second partial structure which is associated with the circuit, a process variation of the first partial structure being performed in order to adjust a structure property of the sensor structure while the second partial structure remains the same.

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.

Abstract: A production method for chips, in which as many method steps as possible are carried out in the wafer composite, that is, in parallel for a plurality of chips disposed on a wafer. This is a method for producing a plurality of chips whose functionality is implemented on the basis of the surface layer of a substrate. In this method, the surface layer is patterned and at least one cavity is produced below the surface layer, so that the individual chip regions are connected to each other and/or to the rest of the substrate by suspension webs only, and/or so that the individual chip regions are connected to the substrate layer below the cavity via supporting elements in the region of the cavity. The suspension webs and/or supporting elements are cut when the chips are separated. The patterned and undercut surface layer of the substrate is embedded in a plastic mass before the chips are separated.

Abstract: A simple and economical method for manufacturing very thin capped MEMS components. In the method, a large number of MEMS units are produced on a component wafer. A capping wafer is then mounted on the component wafer, so that each MEMS unit is provided with a capping structure. Finally, the MEMS units capped in this way are separated to form MEMS components. A diaphragm layer is formed in a surface of the capping wafer by using a surface micromechanical method to produce at least one cavern underneath the diaphragm layer, support points being formed that connect the diaphragm layer to the substrate underneath the cavern. The capping wafer structured in this way is mounted on the component wafer in flip chip technology, so that the MEMS units of the component wafer are capped by the diaphragm layer. The support points are then cut through in order to remove the substrate.

Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

Abstract: A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer.

Abstract: A method for producing a micromechanical component, preferably for fluidic applications having cavities. The component is constructed from two functional layers, the two functional layers being patterned differently using micromechanical methods. A first etch stop layer having a first pattern is applied to a base plate. A first functional layer is applied to the first etch stop layer and to the first contact surfaces of the base plate. A second etch stop layer, having a second pattern, is applied to first functional layer. A second functional layer is applied to the second etch stop layer and to the second contact surfaces of the first functional layer. An etching mask is applied to the second functional layer. The second and the first functional layer are patterned as sacrificial layers by the use of the first and the second etch stop layer by etching methods and/or by using the first and the second etch stop layer.

Abstract: A micromechanical pressure sensor includes a first diaphragm and a second diaphragm accommodated in a shared semiconductor substrate. The two diaphragms facilitate independent pressure sensing of one or more media, by the fact that a respective pressure variable is sensed by way of the deflection of the respective diaphragm. A cap above the first diaphragm defines a hollow space that is connected to the hollow space below the second diaphragm.

Abstract: A differential-pressure sensor system and a corresponding production method. The differential-pressure sensor system includes: a differential-pressure sensor chip having a first pressure application region for applying a first pressure, as pressure to be detected, to the differential-pressure sensor chip, and a second pressure application region for applying a second pressure, as reference pressure, to the differential-pressure sensor chip; a housing that partially surrounds the differential-pressure sensor chip; the housing having a through hole, through which the first pressure application region is exposed to the outside; and the housing having an input opening, through which the second pressure application region is exposed to the outside.