Abstract: A method for producing a micromechanical component, preferably for fluidic applications having cavities. The component is constructed from two functional layers, the two functional layers being patterned differently using micromechanical methods. A first etch stop layer having a first pattern is applied to a base plate. A first functional layer is applied to the first etch stop layer and to the first contact surfaces of the base plate. A second etch stop layer, having a second pattern, is applied to first functional layer. A second functional layer is applied to the second etch stop layer and to the second contact surfaces of the first functional layer. An etching mask is applied to the second functional layer. The second and the first functional layer are patterned as sacrificial layers by the use of the first and the second etch stop layer by etching methods and/or by using the first and the second etch stop layer.

Abstract: A micromechanical device for measuring a pressure variable and a method for manufacturing a micromechanical pressure sensor. The sensor includes, two components; a first component featuring a diaphragm made of a first material, and a second component of a second material. This second component is designed to have a thin first region and a thick second region. The first and second components are permanently joined together via the first diaphragm and at least a portion of the first region. The materials are selected such that the temperature expansion coefficient of the first material is higher than that of the second material. The first and second components are joined in such a manner that a lateral expansion of the first diaphragm caused by temperature changes is transferred to the first region of the second component as a lateral expansion as well.

Abstract: A pressure sensor having a pressure sensor element, the pressure sensor element having a diaphragm area and a first fixing area, the pressure to be measured exerting a force action on the diaphragm area, the first fixing area being connected to a second fixing area of a fixing element to fix the pressure sensor element, and the first fixing area and the second fixing area being pressure-loaded by the force action.

Abstract: A sensor for measuring a force is provided, which sensor includes a first sealed volume, a second sealed volume, a pressure diaphragm and a force diaphragm. The pressure diaphragm has a first side and a second side, with a pressure of the first sealed volume acting on the first side, and a pressure of the second sealed volume acting on the second side. The force diaphragm is exposed to a force, and the pressure of the first volume is dependent on the force acting on the force diaphragm.

Abstract: A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.

Abstract: A micromechanical pressure sensor which is made up of at least one first component element and a second component element bordering on the first component element. In this context, the first component element includes at least one diaphragm and one cavity. The cavity is arranged or structured so that the medium to be measured gains access to the diaphragm through the cavity. In addition, in the second component element an opening is provided which guides the medium to be measured to the cavity. At least a part of the cavity represents an extension, without a transition, of the opening in the second component.

Abstract: Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings are introduced into a semiconductor substrate. After the openings are introduced into the semiconductor substrate, a subsequent temperature treatment is carried out, in which the openings are converted into voids in the depth of the substrate.

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract: A method for dicing semiconductor chips and a corresponding semiconductor chip system are described. The met-hod includes the steps: provision of a substrate having an upper substrate level, a middle substrate level and a lower substrate level; a plurality of empty spaces or porous areas being provided in the middle substrate level, the empty spaces or porous areas being enclosed by a substrate frame area; the empty spaces or porous areas being situated under a particular semiconductor chip area which is delimited by a semiconductor chip peripheral area in such a way that a particular substrate frame area is distanced from a vertical extension of the particular corresponding semiconductor peripheral area by a lateral intermediate space. In the case of the empty spaces, at least one substrate support element is provided to bond the lower substrate level to a particular semiconductor chip area in the upper substrate level.

Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions.

Abstract: A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression.

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract: A semiconductor component for a semiconductor substrate, in which a first section and a second section are provided, and in which the pore structure of the first section differs from the pore structure of the second section.

Abstract: The present invention creates a micromechanical piezoresistive pressure sensor device having a sensor substrate (1), in which an essentially rectangular diaphragm region (50) is provided; a piezoresistive resistance device (S1-S4; S1, S2, S3?, S4?) having at least one piezoresistive resistor strip (S1-S4; S1, S2), which runs parallel to the longitudinal edges (55a, 55b) of the diaphragm device (50) across the entire length of the diaphragm device (50) and onto the surrounding sensor substrate (1); the piezoresistive resistor strip (S1-S4; S1, S2) having a narrow center region (S10-S40; S10, S20, S30?, S40?) and widened end regions (S11, S12, S21, S22, S31, S32, S41, S42; S11, S12, S21, S22, S31?, S32?, S41?, S42?) and the widened end regions (S11, S12, S21, S22, S31, S32, S41, S42; S11, S12, S21, S22, S31?, S32?, S41?, S42?) running across the short edges (56a, 56b) of the diaphragm device (50).

Abstract: In a method for manufacturing a micromechanical semiconductor component, e.g., a pressure sensor, a locally limited, buried, and at least partially oxidized porous layer is produced in a semiconductor substrate. A cavity is subsequently produced in the semiconductor substrate from the back, directly underneath the porous first layer, using a trench etch process. The porous first layer is used as a stop layer for the trench. Thin diaphragms having a low thickness tolerance may thus be produced for differential pressure measurement.

Abstract: A method for mounting semiconductor chips includes the steps of: a) providing a semiconductor chip having a surface that has a diaphragm region and a peripheral region, the peripheral region having a mounting region; b) providing a substrate which has a surface having a recess; c) mounting the mounting region of the semiconductor chip using a flip-chip technique onto the surface of the substrate in such a way that an edge of the recess lies between the mounting region and the diaphragm region; and d) underfilling the mounting region using an underfilling component, the edge of the recess being used a demarcation region for the underfilling component, so that no underfilling component is able to get into the diaphragm region. Also provided is a corresponding semiconductor chip system.

Abstract: A method for packaging semiconductor chips and a corresponding semiconductor chip system. The method includes making available a semiconductor chip having a diaphragm region; providing a cap over the diaphragm region, while leaving the diaphragm region open; mounting the semiconductor chip on a support frame; and providing a molded housing around the semiconductor chip and at least a partial region of the support frame for packaging the semiconductor chip.

Abstract: A micromechanical device for measuring a pressure variable and a method for manufacturing a micromechanical pressure sensor. The sensor includes, two components; a first component featuring a diaphragm made of a first material, and a second component of a second material. This second component is designed to have a thin first region and a thick second region. The first and second components are permanently joined together via the first diaphragm and at least a portion of the first region. The materials are selected such that the temperature expansion coefficient of the first material is higher than that of the second material. The first and second components are joined in such a manner that a lateral expansion of the first diaphragm caused by temperature changes is transferred to the first region of the second component as a lateral expansion as well.

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.