Abstract: A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.

Abstract: A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

Abstract: A method for the plasma-free etching of silicon using the etching gas ClF3 or XeF2 and its use are provided. The silicon is provided having one or more areas to be etched as a layer on the substrate or as the substrate material itself. The silicon is converted into the mixed semiconductor SiGe by introducing germanium and is etched by supplying the etching gas ClF3 or XeF2. The introduction of germanium and the supply of the etching gas ClF3 or XeF2 may be performed at the same time or alternatingly. In particular, it is provided that the introduction of germanium be performed by implanting germanium ions in silicon.

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented. For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract: A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.

Abstract: A method is described for mounting semiconductor chips and a corresponding semiconductor chip system. The method may include providing a semiconductor chip having a surface that includes a diaphragm region and a peripheral region, the peripheral region having a mounting region, and a cavity being disposed underneath the diaphragm region, which extends into the mounting region and ends there in an opening. The method may also include providing a substrate which has a surface having a recess; mounting the mounting region of the semiconductor chip in flip-chip technology onto the surface of the substrate in such a way that an edge of the recess lies between the mounting region and the diaphragm region and the opening faces in the direction of the substrate.

Abstract: In a method for manufacturing a micromechanical semiconductor component, e.g., a pressure sensor, a locally limited, buried, and at least partially oxidized porous layer is produced in a semiconductor substrate. A cavity is subsequently produced in the semiconductor substrate from the back, directly underneath the porous first layer, using a trench etch process. The porous first layer is used as a stop layer for the trench. Thin diaphragms having a low thickness tolerance may thus be produced for differential pressure measurement.

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression.

Abstract: A pressure sensor having a pressure sensor element, the pressure sensor element having a diaphragm area and a first fixing area, the pressure to be measured exerting a force action on the diaphragm area, the first fixing area being connected to a second fixing area of a fixing element to fix the pressure sensor element, and the first fixing area and the second fixing area being pressure-loaded by the force action.

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: The present invention describes a device having a housing and at least one electrical component, the housing having at least one of the electrical components and being filled at least partially by a passivating agent. Furthermore, it is provided that the electrical component is covered at least partially by the passivating agent. Now, the crux of the present invention is that an additional material layer is applied on top of the passivating agent. Using this additional material layer, a device is able to be implemented in a simple and cost-effective construction, that is resistive to environmental damages. This makes possible using electrical components in corrosive environments.

Abstract: A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure. A method easily and inexpensively produce a micromechanical component having monocrystalline oscillator structures, such as an acceleration sensor or a rotational rate sensor for example, by surface micromechanics, a first porous layer is formed in the semiconductor component in a first step and a cavity, i.e., a cavern, is formed beneath or out of the first porous layer in the semiconductor component in a second step.

Abstract: A micromechanical piezoresistive pressure sensor device having a sensor substrate, in which an essentially rectangular diaphragm region is provided; a piezoresistive resistance device having at least one piezoresistive resistor strip, which runs parallel to the longitudinal edges of the diaphragm device across the entire length of the diaphragm device and onto the surrounding sensor substrate; the piezoresistive resistor strip having a narrow center region and widened end regions and the widened end regions running across the short edges of the diaphragm device.

Abstract: A micromechanical device and a method for producing this device are provided, two sensor patterns being provided in the semiconductor material to record two mechanical variables, in particular the pressure and the acceleration. The functionality of both sensor patterns is based on the same predefined converter principle.

Abstract: A micromechanical device and a method for producing this device are provided, the device having a sensor pattern that includes a spring pattern and a seismic mass. The seismic mass may be connected to the substrate material via the spring pattern, and a clearance may be provided in a direction perpendicular to the major substrate plane between the spring pattern and the substrate material. Alternatively, the spring pattern and the seismic mass may have a common, essentially continuous, front side surface.

Abstract: A micromechanical pressure sensor includes a substrate having a front side and a back side, the front side facing a medium and the back side being situated on the opposite side of the substrate. A sensor diaphragm having at least one sensor area is situated on the front side, and a recess or cavity is situated behind the sensor diaphragm, and electrical contacting is provided on the back side.

Abstract: A micromechanical sensor, and a method for manufacturing a micromechanical sensor, featuring, in addition to a sensor element, at least a part of an evaluation circuit. In this context, the micromechanical sensor contains at least a first structural element made of a first material. The first structural element houses at least one sensor region and a part of an evaluation circuit, at least one sensor element being located in the sensor region. Moreover, at least one first and one second side are to be distinguished from one another in the first structural element. The first side of the first structural element features at least the sensor element, while the second side of the first structural element features at least a part of the evaluation circuit. At least parts of the sensor region and/or of the evaluation circuit are formed from the first material by micromechanical processing.

Abstract: A semiconductor component, such as a humidity sensor, which has a semiconductor substrate, such as, for example, made of silicon, a first electrode and a second electrode and at least one first layer that is accessible for a medium acting from the outside on the semiconductor component, the first layer being arranged at least partially between the first and the second electrode. To reduce the costs for producing the semiconductor component the first layer has pores into which the medium reaches at least partially.

Abstract: A method for manufacturing a semiconductor component, such as, for example, a multilayer semiconductor component including a micromechanical component, such as, for example, a heat transfer sensor having a semiconductor substrate of silicon, and a sensor region. For inexpensive manufacture of a thermal insulation between the semiconductor substrate and the sensor region a porous layer is provided in the semiconductor component.