Abstract: A method of producing a semiconductor component (300; 400; 500; 600; 700; 800; 900; 1000; 1100), in particular a multilayer semiconductor component, and a semiconductor component produced by this method are described, where the semiconductor component has in particular a mobile mass, i.e., an oscillator structure (501, 502; 601, 702) according to the preambles of the respective independent patent claims.

Abstract: A semiconductor component and a method for a semiconductor substrate, in which a first section and a second section are provided, and in which the pore structure of the first section differs from the pore structure of the second section.

Abstract: A micromechanical component is proposed having a substrate (10) and a cover layer (40) deposited on the substrate (10), underneath the cover layer (40), a region (30; 30′) of porous material being provided which mechanically supports and thermally insulates the cover layer (40). On the cover layer (40), a heating device (70) is provided to heat the cover layer (40) above the region (30; 30′); and above the region (30; 30′), a detector (200, 200′) is provided to measure an electric property of a heated medium (150) provided above the region (30; 30′) on the cover layer (40).

Abstract: An apparatus, a tire, a transmitting and/or receiving device and a system for the wireless transmission of data between the apparatus and the transmitting and/or receiving device are provided, an antenna being frictionally connected to a rotating part, the antenna being provided in a manner that it projects from the part.

Abstract: A micromechanical diaphragm is described which has a partially n-doped p-substrate on its surface and a top n-epitaxial layer, one or more n-epitaxial layers which are p-doped in the diaphragm area being arranged on the p-substrate.

Abstract: A micromechanical component having a substrate (10) made from a substrate material having a first doping type (p), a micromechanical functional structure provided in the substrate (10) and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones (15; 15a; 15b; 15c; 730; 740; 830) made from the substrate material having a second doping type (n), the zones being at least partially surrounded by a cavity (50; 50e-f), and the cover layer has a porous layer (30) made from the substrate material.

Abstract: A micromechanical diaphragm is described which has a partially n-doped p-substrate on its surface and a top n-epitaxial layer, one or more n-epitaxial layers which are p-doped in the diaphragm area being arranged on the p-substrate.

Abstract: A method for manufacturing a membrane in which an n-doped epitaxy layer is applied on a p-doped silicon substrate. Disposed between the silicon substrate and the epitaxy layer is a p-doping which leads to a reduction of the membrane thickness during a subsequent etching process.

Abstract: A micromechanical component, in particular a mass flow sensor, includes a tongue made of a micromechanical material that is elastically bendable under the influence of an external pressure acting on a surface region of the tongue, in which a piezoresistive resistance device is provided on the elastic tongue, in which a holding device holds a region of the elastic tongue, and in which the holding device is arranged so that the external pressure causes a change in the mechanical stress at the location of the tongue in the region of the piezoresistive resistance device.

Abstract: A method is described for producing a semiconductor component (100; . . . ; 2200) particularly a multilayer semiconductor element, preferably a micromechanical component, particularly a pressure sensor, having a semiconductor substrate (101), particularly made of silicon, and a semiconductor component produced according to the method.

Abstract: A micromechanical component having a substrate and a diaphragm positioned on the substrate. Underneath the diaphragm a region made of porous material is provided, which mechanically supports the diaphragm and thermally insulates it.

Abstract: A micromechanical component, particularly a pressure sensor, includes a substrate, made of semiconductor material; a functional layer provided epitactically on substrate; a hollow space being provided between substrate and functional layer defining a diaphragm region of functional layer; and below diaphragm region, on substrate, one or more spacers being provided, for preventing adhesion of diaphragm region to substrate during deformation. Also described is an appropriate manufacturing method.

Abstract: A micromechanical component, particularly a pressure sensor, includes a substrate, made of semiconductor material; a functional layer provided epitactically on substrate; a hollow space being provided between substrate and functional layer defining a diaphragm region of functional layer; and below diaphragm region, on substrate, one or more spacers being provided, for preventing adhesion of diaphragm region to substrate during deformation. Also described is an appropriate manufacturing method.

Abstract: A pressure sensor includes a metallic membrane and a frame. For detecting the deflection of the membrane, a silicon bridge element having piezoresistive resistor elements is arranged on the membrane and the frame.

Abstract: In a first variant of this pressure sensor with a substrate and a diaphragm which are joined together parallel to each other in a defined spaced relationship, forming a chamber sealed at least at the edge, the chamber-side surface of the diaphragm is completely covered with a diaphragm electrode. The chamber-side surface of the substrate supports a reference electrode consisting of an outer portion, which extends along the edge of the chamber and whose capacitance is virtually pressure-independent, and a pressure-dependent central portion, which is located at the center of the substrate and is connected with the outer portion via a connecting portion. The remainder of the substrate surface is covered with a measuring electrode spaced from the reference electrode by a constant distance.

Abstract: A pressure-measuring arrangement has a pressure-sensor structure with a diaphragm whose pressure-dependent deflection is measurable capacitively by means of a first electrode (=measuring electrode) disposed on the diaphragm and forming a measuring capacitance, C.sub.s, together with a fixed counter-electrode. A second electrode forming a second pressure-dependent capacitance, C.sub.f, together with the counter-electrode is implemented and disposed on the diaphragm. A third electrode forms a constant reference capacitance, C.sub.r, together with the fixed counter-electrode. An evaluating circuit derives the pressure by a capacitance measurement and has the following transfer function:F=[C.sub.s (p)-C.sub.r ]/C.sub.f (p).The first electrode and the second electrode are separated by a boundary having an angularly extending profile optimized with respect to a minimal linearity error. This profile varies as a function of the variable radius of the first electrode and the variable radius of the second electrode.