Abstract: A large model-based recommendation method includes: determining description information of interested content corresponding to a target user; inputting a content to be recommended, the description information of interested content and current popular search sentences into a large model to generate at least one recommendation card corresponding to the content to be recommended, in which the recommendation card contains a recommendation word associated with the content to be recommended; obtaining a current behavior characteristic of the target user; and in response to the current behavior characteristic satisfying a display condition of the recommendation card, displaying the recommendation card corresponding to at least one content to be recommended.

Abstract: Embodiments of the present application provide a footwear strap and a footwear having the same. Among others, the footwear strap comprises a strap element and a rigid heel structural element; wherein the rigid heel structural element is disposed inside the strap element, and the rigid heel structural element comprises an upper rear portion; when the footwear strap is assembled to a footwear, the upper rear portion extends in a direction from the position where the footwear contacts the heel toward the position where the footwear contacts the toe, and inclines downward of the footwear; the upper rear portion has a convex curvature which is adapted to the shape of the heel so as to facilitate easily receiving the heel; when the footwear strap is assembled to the footwear, an inner lower portion of the convex curvature faces an opening of the footwear.

Abstract: Various embodiments of the present application are directed towards an integrated chip (IC). The IC comprises a trench capacitor overlying a substrate. The trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. The plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. The plurality of capacitor electrode structures comprise a metal component and a nitrogen component. The plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.

Abstract: A cerium-zirconium-aluminum-based composite material, a cGPF catalyst and a preparation method thereof are provided. The cerium-zirconium-aluminum-based composite material adopts a stepwise precipitation method, firstly preparing an aluminum-based pre-treated material, then coprecipitating the aluminum-based pre-treated material with zirconium and cerium sol, and finally roasting at high temperature to obtain the cerium-zirconium-aluminum-based composite material. The cerium-zirconium-aluminum-based composite material has better compactness and higher density, and when it is used in cGPF catalyst, it occupies a smaller volume of pores on the catalyst carrier, such that cGPF catalyst has lower back pressure and better ash accumulation resistance, which is beneficial to large-scale application of cGPF catalyst.

Abstract: A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an dielectric layer. The first semiconductor package includes a plurality of first semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the first semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of first semiconductor chips, wherein the second semiconductor package includes a plurality of second semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of second semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of first semiconductor chips. The dielectric layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.

Abstract: A surface treatment method of a copper foil, an antioxidant copper foil, and a cathode of a lithium battery are provided. The antioxidant copper foil includes a copper foil substrate and an antioxidant layer formed thereon. The antioxidant layer contains chromium elements derived from a chromic acid compound, and contains nitrogen elements at least partially derived from an aminotetrazole compound and a nitrogen-containing heterocyclic compound. The antioxidant copper foil satisfies the following characteristics: (a) the antioxidant layer has a chromium content of between 5 and 35 ?g/m2 determined by XRF; (b) the antioxidant layer has a nitrogen content of between 0.1 and 10 wt % determined by XPS; (c) the antioxidant copper foil has a C—N signal detected by headspace GC-MS; and (d) after baking the antioxidant copper foil at 250° C. for 10 minutes, a surface color difference ?E of the antioxidant layer is not greater than 8.

Abstract: Novel deuterium- or fluorine-containing chemical compounds are provided. They are centrally acting skeletal muscle relaxants, effective for treating various types of muscle spasms, including acute musculoskeletal pain, low-back pain, inflammatory arthritis, fibromyalgia, and perioperative care for hip and knee replacements or related conditions. In addition, pharmaceutical compositions and methods for their preparation and use are described.

Abstract: Various embodiments include integrated circuit packages and methods of forming integrated circuit packages. In an embodiment, a device includes: a package substrate; an integrated circuit device attached to the package substrate; a stiffener ring around the integrated circuit device and attached to the package substrate; a lid attached to the stiffener ring; a channel connected to an area between the lid and the integrated circuit device, the channel extending along at least one side of the integrated circuit device in a top-down view; and a thermal interface material in the channel and in the area between the lid and the integrated circuit device.

Abstract: Methods of forming decoupling capacitors in interconnect structures formed on backsides of semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a device includes a device layer including a first transistor; a first interconnect structure on a front-side of the device layer; a second interconnect structure on a backside of the device layer, the second interconnect structure including a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a first conductive layer including a first conductive line electrically connected to the source/drain region of the first transistor through the contact; and a second dielectric layer adjacent the first conductive line, the second dielectric layer including a material having a k-value greater than 7.0, a first decoupling capacitor including the first conductive line and the second dielectric layer.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.

Abstract: A voltage tracking circuit includes a first, second, third and fourth transistor. The first transistor is in a first well, the first transistor including a first source terminal and a first body terminal that are coupled to a first voltage supply. The second transistor includes a second source terminal being coupled to the first drain terminal, a second gate terminal being coupled to a pad voltage terminal and configured to receive a pad voltage. The third transistor is in a second well, and includes a third gate terminal coupled to the first voltage supply, and a third body terminal coupled to a first node. The fourth transistor includes a fourth drain terminal coupled to the third source terminal, a fourth gate terminal coupled to the third gate terminal and the first voltage supply, and a fourth source terminal coupled to the pad voltage terminal.

Abstract: There is disclosed a method of operating a radio node in a wireless communication network, the method including communicating based on a signaling structure, the signaling structure including a number R of long symbols and/or a number Nsym of regular symbols, wherein R and/or Nsym is based on the subcarrier spacing associated to the signaling structure and/or a cyclic prefix length of a long symbol and/or a cyclic prefix length of a regular symbol. The disclosure also pertains to related devices and methods.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A package structure includes a package substrate, an interposer module on the package substrate, a thermal interface material (TIM) layer on the interposer module, and a package lid on the TIM layer, including a package lid foot portion attached to the package substrate, a package lid plate portion connected to the package lid foot portion, and a plurality of fins extending from the package lid plate portion into the TIM layer over the interposer module.

Abstract: A system for measuring a satellite ghost efficiency of a diffractive lens is provided. The system includes a light source configured to output a first probing beam, and a beam tweaking assembly disposed between the light source and the diffractive lens, and configured to convert the first probing beam into a second probing beam that is a non-collimated beam. The diffractive lens diffracts the second probing beam into a plurality of diffracted beams including a first diffracted beam of a parent diffraction order and a second diffracted beam of a satellite ghost diffraction order. The beam tweaking assembly includes one or more optical lenses, and an adjustable optical power. The system also includes a detector configured to generate a beam spot pattern including a first beam spot corresponding to the first diffracted beam and a second beam spot corresponding to the second diffracted beam.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a capacitor structure. The capacitor structure is disposed on the substrate. The capacitor structure includes a first electrode and a plurality of second electrodes. At least one of the plurality of second electrodes is embedded within the first electrode.

Abstract: The present application provides a processing method of a metal composite structure including a first metal layer and a second metal layer stacked on the first metal layer. The processing method includes the steps of defining a first through hole in the first metal layer, and drilling in the first through hole toward the second metal layer to form a traction hole in the second metal layer. Then, hot melt drilling is performed on a surface of the second metal layer away from the first metal layer toward the first through hole, thereby causing the second metal layer to crack under a traction force of the traction hole to form a second through hole, and a portion of the second metal layer to be melted and squeezed to form a bushing which adheres to at least a portion of a sidewall of the first through hole.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip comprising a gate electrode disposed on a substrate between a pair of source/drain regions. A dielectric layer is over the substrate. A field plate is disposed on the dielectric layer and laterally between the gate electrode and a first source/drain region in the pair of source/drain regions. The field plate comprises a first field plate layer and a second field plate layer. The second field plate layer extends along sidewalls and a bottom surface of the first field plate layer. The first and second field plate layers comprise a conductive material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.

Abstract: A transmission device for multi-frequency equal-amplitude non-harmonic electrical prospecting signal includes a single-chip microcontroller, a field programmable gate array (FPGA), a digital to analog conversion (DAC) module, an isolation amplifier circuit, a differential amplifier module, a digital power amplifier circuit, and a sensor module connected successively. A plurality of output ends of the digital power amplifier circuit is in cascade connection with a grounding electrode A and a grounding electrode B to form a loop with ground. An input end of the sensor module is connected with the digital power amplifier circuit. An output end of the sensor module is connected with the single-chip microcontroller.