Patents by Inventor Hui Cheng

Hui Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12243872
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.
    Type: Grant
    Filed: February 15, 2022
    Date of Patent: March 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Huang Huang, Yu-Ling Cheng, Shun-Hui Yang, An Chyi Wei, Chia-Jen Chen, Shang-Shuo Huang, Chia-I Lin, Chih-Chang Hung
  • Publication number: 20250067896
    Abstract: A transmission device for multi-frequency equal-amplitude non-harmonic electrical prospecting signal includes a single-chip microcontroller, a field programmable gate array (FPGA), a digital to analog conversion (DAC) module, an isolation amplifier circuit, a differential amplifier module, a digital power amplifier circuit, and a sensor module connected successively. A plurality of output ends of the digital power amplifier circuit is in cascade connection with a grounding electrode A and a grounding electrode B to form a loop with ground. An input end of the sensor module is connected with the digital power amplifier circuit. An output end of the sensor module is connected with the single-chip microcontroller.
    Type: Application
    Filed: November 12, 2024
    Publication date: February 27, 2025
    Inventors: Guohong FU, Lijuan YANG, Shijie WANG, Hui CHENG, Songyuan FU, Tianchun YANG
  • Patent number: 12237288
    Abstract: In an embodiment, an interposer has a first side, a first integrated circuit device attached to the first side of the interposer with a first set of conductive connectors, each of the first set of conductive connectors having a first height, a first die package attached to the first side of the interposer with a second set of conductive connectors, the second set of conductive connectors including a first conductive connector and a second conductive connector, the first conductive connector having a second height, the second conductive connector having a third height, the third height being different than the second height, a first dummy conductive connector being between the first side of the interposer and the first die package, an underfill disposed beneath the first integrated circuit device and the first die package, and an encapsulant disposed around the first integrated circuit device and the first die package.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Yu Huang, Sung-Hui Huang, Shang-Yun Hou, Shu Chia Hsu, Yu-Yun Huang, Wen-Yao Chang, Yu-Jen Cheng
  • Patent number: 12237291
    Abstract: A semiconductor device and method utilizing a dummy structure in association with a redistribution layer is provided. By providing the dummy structure adjacent to the redistribution layer, damage to the redistribution layer may be reduced from a patterning of an overlying passivation layer, such as by laser drilling. By reducing or eliminating the damage caused by the patterning, a more effective bond to an overlying structure, such as a package, may be achieved.
    Type: Grant
    Filed: June 17, 2022
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Li-Hui Cheng, Po-Hao Tsai, Jing-Cheng Lin
  • Patent number: 12234543
    Abstract: A method for preparing bismuth oxide nanowire films by heating in an upside down position includes: washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position where an electrically conductive surface of the substrate faces downwards; placing a bismuth target, which is adhered to a copper backing plate, on a sputtering head in the magnetron sputtering system; performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: February 25, 2025
    Assignee: Institute of Analysis. Guangdong Academy of Sciences (China National Analytical Center, Guangzhou)
    Inventors: Fuxian Wang, Liling Wei, Qiong Liu, Hui Cheng
  • Publication number: 20250060502
    Abstract: A device and method for measuring spectrum parameters of a formation outcrop and a rock mass are provided. An excitation signal is generated by a direct digital synthesis (DDS) module of a signal transmission portion. A constant voltage mode or a constant current mode is adopted for observation. After the signal passes through a constant voltage/constant current module, a constant high-voltage signal source or a current source signal with constant current output is formed and output to ground through grounding electrodes A and B to establish a stable observation signal field source. Geoelectric response information under the excitation of each frequency signal is acquired by a signal receiving portion through grounding electrodes M and N, processed and send out to a microcontroller unit (MCU) for display and storage. The spectrum parameters at different depths are observed by adjusting geometric dimensions of AB and MN.
    Type: Application
    Filed: November 5, 2024
    Publication date: February 20, 2025
    Inventors: Hui CHENG, Guohong FU, Yan LIU, Xiuying LIAO
  • Publication number: 20250063743
    Abstract: Some implementations described herein provide techniques and apparatuses for an integrated circuit device including a trench capacitor structure that has a merged region. A material filling the merged region is different than a material that is included in electrode layers of the trench capacitor structure. Furthermore, the material filling the merged region includes a coefficient of thermal expansion and a modulus of elasticity that, in combination with the architecture of the trench capacitor structure, reduce thermally induced stresses and/or strains within the integrated circuit device relative to another integrated circuit device having a trench capacitor structure including a merged region and electrode layers of a same material.
    Type: Application
    Filed: August 15, 2023
    Publication date: February 20, 2025
    Inventors: Shu-Hui SU, Hsin-Li CHENG, YingKit Felix TSUI, Tuo-Hsin CHIEN, Jyun-Ying LIN, Shi-Min WU, Yu-Chi CHANG, Ting-Chen HSU
  • Publication number: 20250063744
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a substrate comprising first opposing sidewalls defining a first trench and second opposing sidewalls defining a second trench laterally offset from the first trench. A stack of layers comprises a plurality of conductive layers and a plurality of dielectric layers alternatingly stacked with the conductive layers. The stack of layers comprises a first segment in the first trench and a second segment in the second trench. A first lateral distance between the first segment and the second segment aligned with a first surface of the substrate is greater than a second lateral distance between the first segment and the second segment below the first surface of the substrate.
    Type: Application
    Filed: November 7, 2024
    Publication date: February 20, 2025
    Inventors: Hsin-Li Cheng, Jyun-Ying Lin, Alexander Kalnitsky, Shih-Fen Huang, Shu-Hui Su, Ting-Chen Hsu, Tuo-Hsin Chien, Felix Ying-Kit Tsui, Shi-Min Wu, Yu-Chi Chang
  • Patent number: 12227410
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.
    Type: Grant
    Filed: January 5, 2024
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Po Chen Yeh, Yi-Hsien Chang, Fu-Chun Huang, Ching-Hui Lin, Chiahung Liu, Shih-Fen Huang, Chun-Ren Cheng
  • Patent number: 12230609
    Abstract: A semiconductor package includes a first semiconductor die, an adhesive layer, a second semiconductor die, a plurality of conductive pillars and an encapsulant. The adhesive layer is adhered to the first semiconductor die. The second semiconductor die is stacked over the first semiconductor die. The conductive pillars surround the first semiconductor die. The encapsulant encapsulates the first semiconductor die and the conductive pillars, wherein a top surface of the encapsulant is higher than top surfaces of the conductive pillars.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: February 18, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chin-Fu Kao, Chih-Yuan Chien, Li-Hui Cheng, Szu-Wei Lu
  • Publication number: 20250054900
    Abstract: A package structure includes a circuit substrate, a package unit, a thermal interface material and a cover. The package unit is disposed on and electrically connected with the circuit substrate. The package unit includes a first surface facing the circuit substrate and a second surface opposite to the first surface. A underfill is disposed between the package unit and the circuit substrate, surrounding the package unit and partially covering sidewalls of the package unit. The cover is disposed over the package unit and over the circuit substrate. An adhesive is disposed on the circuit substrate and between the cover and the circuit substrate. The thermal interface material includes a metal-type thermal interface material and is disposed between the cover and the package unit. The thermal interface material physically contacts the second surface and the sidewalls of the package unit and physically contacts the underfill.
    Type: Application
    Filed: August 7, 2023
    Publication date: February 13, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yen Lan, Chih-Chien Pan, Pu Wang, Li-Hui Cheng, Ying-Ching Shih, Yu-Wei Lin
  • Publication number: 20250056874
    Abstract: One aspect of the present disclosure pertains to a device. The device includes a substrate, a logic circuit disposed on the substrate, and a nanoelectromechanical systems (NEMS) device electrically connected to the logic circuit and formed on the substrate. The NEMS device includes a first electrode electrically connected to the logic circuit, a second electrode electrically connected to a first power supply, a movable feature electrically connected to the second electrode, and a control electrode operable to move the movable feature relative to the first electrode.
    Type: Application
    Filed: November 17, 2023
    Publication date: February 13, 2025
    Inventors: Hung-Li Chiang, Ching-Hui Lin, Chun-Ren Cheng, Iuliana Radu
  • Publication number: 20250054824
    Abstract: A package structure including a packaging substrate, a semiconductor device, passive components, a lid, and a dam structure is provided. The semiconductor device is disposed on and electrically connected to the packaging substrate. The passive components are disposed on the packaging substrate, wherein the semiconductor device is surrounded by the passive components. The lid is disposed on the packaging substrate, and the lid covers the semiconductor device and the passive components. The dam structure is disposed between the packaging substrate and the lid, wherein the dam structure covers the passive components and laterally encloses the semiconductor device.
    Type: Application
    Filed: August 8, 2023
    Publication date: February 13, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi Wen Huang, Chih-Hao Chen, Ping-Yin Hsieh, Yi-Huan Liao, Li-Hui Cheng
  • Patent number: 12224960
    Abstract: There is disclosed a method of operating a transmitting node in a millimeter-wave communication network. The method includes transmitting millimeter-wave signaling in a transmission timing structure, the transmission timing structure including N time interval elements sequentially ordered in time, the millimeter-wave signaling including N separate signaling structures, each signaling structure being transmitted in a different one of the time interval elements. N is an integer multiple of 2. A first subset of the N separate signaling structures corresponds to control signaling, the subset including 2{circumflex over (?)}m signaling structures consecutive in time beginning with the signaling structure of the first time interval element, and m is an integer such that 2{circumflex over (?)}m<=N. A second subset of the N separate signaling structures corresponds to data signaling, the second subset comprising 0 or an integer number of signaling structures.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: February 11, 2025
    Assignee: Telefonaktiebolaget LM Ericsson (Publ)
    Inventors: Robert Baldemair, Mehrnaz Afshang, Rikke Apelfrojd, Jung-Fu Cheng, Ning He, Dennis Hui, Stefan Parkvall
  • Patent number: 12224224
    Abstract: A package structure includes first and second package components, an underfill layer disposed between the first and second package components, and a metallic layer. The first package component includes semiconductor dies, a first insulating encapsulation laterally encapsulating the semiconductor dies, and a redistribution structure underlying first surfaces of the semiconductor dies and the first insulating encapsulation. The second package component underlying the first package component is electrically coupled to the semiconductor dies through the redistribution structure. The underfill layer extends to cover a sidewall of the first package component, the metallic layer overlying second surfaces of the semiconductor dies and the first insulating encapsulation, and a peripheral region of the second surface of the first insulating encapsulation is accessibly exposed by the metallic layer, where the first surfaces are opposite to the second surfaces.
    Type: Grant
    Filed: March 14, 2022
    Date of Patent: February 11, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hao Chen, Po-Yuan Cheng, Pu Wang, Li-Hui Cheng
  • Publication number: 20250046877
    Abstract: An electrolyte composition comprising a fluoroamino solvent and a lithium salt comprised of boron dissolved in the fluoroamino solvent, the fluoroamino solvent being a fluoroacetamide or fluoroimide may be used as an electrolyte in a secondary battery. The electrolyte composition is useful for lithium ion batteries having an anode comprised of lithium metal and the electrolyte may be present in a lean amount.
    Type: Application
    Filed: October 13, 2022
    Publication date: February 6, 2025
    Inventors: Hui Wang, Jinhua Huang, Ye Zhu, Gang Cheng
  • Patent number: 12218141
    Abstract: In one embodiment, an integrated circuit cell includes a first circuit component and a second circuit component. The first circuit component includes fin field-effect transistors (finFETs) formed in a high fin portion of the integrated circuit cell, the high fin portion of the integrated circuit including a plurality of fin structures arranged in rows. The second circuit component that includes finFETs formed in a less fin portion of the integrated circuit cell, the less fin portion of the integrated circuit including a lesser number of fin structures than the high fin portion of the integrated circuit cell.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Wei-An Lai, Hui-Zhong Zhuang, Jiann-Tyng Tzeng, Wei-Cheng Lin, Lipen Yuan, Yan-Hao Chen
  • Patent number: 12218117
    Abstract: A package structure and methods of forming a package structure are provided. The package structure includes a first die, a second die, a wall structure and an encapsulant. The second die is electrically bonded to the first die. The wall structure is located aside the second die and on the first die. The wall structure is in contact with the first die and a hole is defined within the wall structure for accommodating an optical element. The encapsulant laterally encapsulates the second die and the wall structure.
    Type: Grant
    Filed: November 13, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chien Pan, Chin-Fu Kao, Li-Hui Cheng, Szu-Wei Lu
  • Patent number: 12219778
    Abstract: A memory structure includes: first and second word lines; a high-k dielectric layer disposed on the first and second word lines; a channel layer disposed on the high-k dielectric layer and comprising a semiconductor material; first and second source electrodes electrically contacting the channel layer; a first drain electrode disposed on the channel layer between the first and second source electrodes; a memory cell electrically connected to the first drain electrode; and a bit line electrically connected to the memory cell.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yong-Jie Wu, Yen-Chung Ho, Hui-Hsien Wei, Chia-Jung Yu, Pin-Cheng Hsu, Mauricio Manfrini, Chung-Te Lin
  • Patent number: 12219780
    Abstract: A memory device and method of making the same, the memory device including bit lines disposed on a substrate; memory cells disposed on the bit lines; a first dielectric layer disposed on the substrate, surrounding the bit lines and the memory cells; a second dielectric layer disposed on the first dielectric layer; thin film transistors (TFTs) embedded in the second dielectric layer and configured to selectively provide electric power to corresponding memory cells, the TFTs comprising drain lines disposed on the memory cells, source lines disposed on the first dielectric layer, and selector layers electrically connected to the source lines and the drain lines; and word lines disposed on the second dielectric layer and electrically connected to the TFTs.
    Type: Grant
    Filed: June 30, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yen-Chung Ho, Hui-Hsien Wei, Mauricio Manfrini, Chia-Jung Yu, Yong-Jie Wu, Ken-Ichi Goto, Pin-Cheng Hsu