Patents by Inventor Hung Li

Hung Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11521929
    Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.
    Type: Grant
    Filed: January 5, 2021
    Date of Patent: December 6, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chun-I Tsai, Chih-Wei Chang, Chun-Hsien Huang, Hung-Yi Huang, Keng-Chu Lin, Ken-Yu Chang, Sung-Li Wang, Chia-Hung Chu, Hsu-Kai Chang
  • Publication number: 20220386000
    Abstract: A covering structure disposed within a sound producing package includes a first portion, a second portion and a third portion. The first portion is configured to form a first sound outlet having a first diameter. The second portion is configured to form a chamber having a second diameter. The third portion is configured to form a second sound outlet having a third diameter. Wherein, the first sound outlet, the chamber and the second sound outlet provide an acoustic pathway, the first diameter is smaller than the second diameter, and the third diameter is smaller than the second diameter; and wherein, the second portion is disposed between the first portion and the third portion.
    Type: Application
    Filed: May 4, 2022
    Publication date: December 1, 2022
    Applicant: XMEMS TAIWAN CO., LTD.
    Inventors: Hai-Hung Wen, Wei-Yang Li
  • Publication number: 20220384496
    Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Yu-Hung Cheng, Chun-Tsung Kuo, Jiech-Fun Lu, Min-Ying Tsai, Chiao-Chun Hsu, Ching I Li
  • Patent number: 11515404
    Abstract: A semiconductor structure includes a substrate having a first region and a second region around the first region. A first fin structure is disposed within the first region. A second fin structure is disposed within the second region. A first isolation trench is disposed within the first region and situated adjacent to the first fin structure. A first trench isolation layer is disposed in the first isolation trench. A second isolation trench is disposed around the first region and situated between the first fin structure and the second fin structure. The bottom surface of the second isolation trench has a step height. A second isolation layer is disposed in the second isolation trench.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: November 29, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tsung-Yu Yang, Shin-Hung Li, Ruei-Jhe Tsao, Ta-Wei Chiu
  • Patent number: 11515305
    Abstract: A structure and a formation method of hybrid semiconductor devices are provided. The structure includes a substrate and a fin structure over the substrate. The fin structure has a channel height. The structure also includes a stack of nanostructures over the substrate. The channel height is greater than a lateral distance between the fin structure and the stack of the nanostructures. The structure further includes a gate stack over the nanostructures. The nanostructures are separated from each other by portions of the gate stack.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: November 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Li Chiang, I-Sheng Chen, Tzu-Chiang Chen
  • Publication number: 20220375989
    Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.
    Type: Application
    Filed: September 9, 2021
    Publication date: November 24, 2022
    Applicant: Au Optronics Corporation
    Inventors: Hsin-Hung Li, Wei-Syun Wang, Chih-Chiang Chen, Yu-Cheng Shih, Cheng-Chan Wang, Chia-Hsin Chung, Ming-Jui Wang, Sheng-Ming Huang
  • Publication number: 20220375748
    Abstract: A method of forming a structure having a coating layer includes the following steps: providing a substrate; coating a fluid on the surface of the substrate, where the fluid includes a carrier and a plurality of silicon-containing nanoparticles; and performing a heating process to remove the carrier and convert the silicon-containing nanoparticles into a silicon-containing layer, a silicide layer, or a stack layer including the silicide layer and the silicon-containing layer.
    Type: Application
    Filed: May 24, 2021
    Publication date: November 24, 2022
    Inventors: CHUAN-PU LIU, YIN-WEI CHENG, SHIH-AN WANG, BO-LIANG PENG, CHUN-HUNG CHEN, JUN-HAN HUANG, YI-CHANG LI
  • Patent number: 11506611
    Abstract: A surface-enhanced Raman scattering (SERS) detection method is provided for detecting a target analyte in a sample. The SERS detection method generally includes the steps of: (a). preparing an extract of the sample; (b). introducing the sample extract onto a SERS substrate, causing the target analyte to be absorbed in the SERS substrate; (c). introducing a volatile organic solvent onto the SERS substrate to have the target analyte of the sample extract dissolved and comes out of the SERS substrate; (d). irradiating the SERS substrate with light to evaporate the volatile organic solvent, leaving a more condensed target analyte on the SERS substrate; (e). irradiating the condensed target analyte with laser light to have the target analyte penetrate deeply into the SERS substrate; and (f). performing Raman measurement with a laser beam focusing on the SERS substrate to analyze the target analyte.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: November 22, 2022
    Assignee: PHANSCO CO., LTD.
    Inventors: Chao-Ming Tsen, Ching-Wei Yu, Wei-Chung Chao, Yung-Hsiang Wang, Cheng-Chien Li, Shao-Kai Lin, Tzu-Hung Hsu, Chang-Jung Wen
  • Publication number: 20220367569
    Abstract: The present disclosure relates to an integrated circuit. The integrated circuit has a plurality of bit-line stacks disposed over a substrate and respectively including a plurality of bit-lines stacked onto one another. A data storage structure is over the plurality of bit-line stacks and a selector is over the data storage structure. A word-line is over the selector. The selector is configured to selectively allow current to pass between the plurality of bit-lines and the word-line. The plurality of bit-line stacks include a first bit-line stack, a second bit-line stack, and a third bit-line stack. The first and third bit-line stacks are closest bit-line stacks to opposing sides of the second bit-line stack. The second bit-line stack is separated from the first bit-line stack by a first distance and is further separated from the third bit-line stack by a second distance larger than the first distance.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Hung-Li Chiang, Chao-Ching Cheng, Jung-Piao Chiu, Tzu-Chiang Chen, Yu-Sheng Chen
  • Publication number: 20220367398
    Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 17, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Hung CHEN, Yu-Nu HSU, Chun-Chen LIU, Heng-Chi HUANG, Chien-Chen LI, Shih-Yen CHEN, Cheng-Nan HSIEH, Kuo-Chio LIU, Chen-Shien CHEN, Chin-Yu KU, Te-Hsun PANG, Yuan-Feng WU, Sen-Chi CHIANG
  • Publication number: 20220367662
    Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes forming a liner-free conductive structure on a cobalt conductive structure disposed on a substrate, depositing a cobalt layer on the liner-free conductive structure and exposing the liner-free conductive structure to a heat treatment. The method further includes removing the cobalt layer from the liner-free conductive structure.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 17, 2022
    Applicant: Taiwan Semiconductor Manufacturing, Co., Ltd.
    Inventors: Shuen-Shin Liang, Chun-I Tsai, Chih-Wei Chang, Chun-Hsien Huang, Hung-Yi Huang, Keng-Chu Lin, Ken-Yu Chang, Sung-Li Wang, Chia-Hung Chu, Hsu-Kai Chang
  • Publication number: 20220367618
    Abstract: The structure of a semiconductor device with isolation structures between FET devices and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure on a substrate and forming polysilicon gate structures with a first threshold voltage on first fin portions of the fin structure.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 17, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Li CHIANG, Chao-Ching CHENG, Tzu-Chiang CHEN, I-Sheng CHEN
  • Publication number: 20220367535
    Abstract: In some embodiments, the present disclosure relates to a method for forming an integrated chip (IC), including forming a plurality of image sensing elements including a first doping type within a substrate, performing a first removal process to form deep trenches within the substrate, the deep trenches separating the plurality of image sensing elements from one another, performing an epitaxial growth process to form an isolation epitaxial precursor including a first material within the deep trenches and to form a light absorbing layer including a second material different than the first material within the deep trenches and between sidewalls of the isolation epitaxial precursor, performing a dopant activation process on the light absorbing layer and the isolation epitaxial precursor to form a doped isolation layer including a second doping type opposite the first doping type, and filling remaining portions of the deep trenches with an isolation filler structure.
    Type: Application
    Filed: August 9, 2021
    Publication date: November 17, 2022
    Inventors: Yu-Hung Cheng, Ching I Li, Yu-Siang Fang, Yu-Yao Hsia, Min-Ying Tsai
  • Publication number: 20220367653
    Abstract: The invention provides a semiconductor structure, the semiconductor structure includes a substrate, two shallow trench isolation structures are located in the substrate, a first region, a second region and a third region are defined between the two shallow trench isolation structures, the second region is located between the first region and the third region. Two thick oxide layers are respectively located in the first region and the third region and directly contact the two shallow trench isolation structures respectively, and a thin oxide layer is located in the second region, the thickness of the thick oxide layer in the first region is greater than that of the thin oxide layer in the second region.
    Type: Application
    Filed: June 15, 2021
    Publication date: November 17, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventor: Shin-Hung Li
  • Publication number: 20220369364
    Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may determine a status of a repetition procedure associated with a radio resource control (RRC) connection request message of a four-step random access channel (RACH) procedure. The UE may invoke an activity state of an RRC connection setup message monitoring procedure based at least in part on the status of the repetition procedure. Numerous other aspects are described.
    Type: Application
    Filed: May 13, 2022
    Publication date: November 17, 2022
    Inventors: Mahmoud TAHERZADEH BOROUJENI, Gokul SRIDHARAN, Hung Dinh LY, Peter GAAL, Tao LUO, Junyi LI, Jelena DAMNJANOVIC, Xiaoxia ZHANG
  • Publication number: 20220368319
    Abstract: A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.
    Type: Application
    Filed: November 2, 2021
    Publication date: November 17, 2022
    Inventors: Yi-Chen LU, Hsu-Chi LI, Yi-Jan CHEN, Boy-Yiing JAW, Chin-Tang CHUANG, Chung-Hung CHEN
  • Publication number: 20220368320
    Abstract: The disclosure provides a voltage adjust circuit. The voltage adjust circuit includes a buffer circuit, a bias circuit, a level shifter and a cross voltage limit circuit. The buffer circuit includes a plurality of pull-up transistors and a plurality of pull-down transistors. The pull-up transistors coupled in series between an output terminal of the circuit and a high voltage system terminal. The pull-down transistors coupled in series between the output terminal and a low voltage system terminal. The cross voltage limit circuit is configured to limit transient and static bias voltages across two terminals of the pull-up transistors or the pull-down transistors.
    Type: Application
    Filed: November 2, 2021
    Publication date: November 17, 2022
    Inventors: Yi-Chen LU, Hsu-Chi LI, Yi-Jan CHEN, Boy-Yiing JAW, Chin-Tang CHUANG, Chung-Hung CHEN
  • Publication number: 20220359263
    Abstract: In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.
    Type: Application
    Filed: July 22, 2021
    Publication date: November 10, 2022
    Inventors: Yu-Hsin Chan, Cai-Ling Wu, Chang-Wen Chen, Po-Hsiang Huang, Yu-Yu Chen, Kuan-Wei Huang, Jr-Hung Li, Jay Chiu, Ting-Kui Chang
  • Publication number: 20220359299
    Abstract: A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. The isolation regions extend into a semiconductor substrate. A portion of the semiconductor fin is etched to form a trench, which extends lower than bottom surfaces of the isolation regions, and extends into the semiconductor substrate. The method further includes filling the trench with a first dielectric material to form a first fin isolation region, recessing the first fin isolation region to form a first recess, and filling the first recess with a second dielectric material. The first dielectric material and the second dielectric material in combination form a second fin isolation region.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 10, 2022
    Inventors: Chung-Ting Ko, Tai-Chun Huang, Jr-Hung Li, Tze-Liang Lee, Chi On Chui
  • Publication number: 20220359754
    Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.
    Type: Application
    Filed: July 15, 2022
    Publication date: November 10, 2022
    Inventors: Huan-Sheng WEI, Hung-Li CHIANG, Chia-Wen LIU, Yi-Ming SHEU, Zhiqiang WU, Chung-Cheng WU, Ying-Keung LEUNG