Abstract: A semiconductor device includes a first wiring level layer including a lower wiring layer, a second wiring level layer on the first wiring level layer and including an upper wiring layer, a via level layer positioned between the first wiring level layer and the second wiring level layer and including a via connecting the lower wiring layer to the upper wiring layer, and a reinforcing insulating layer positioned between the lower wiring layer and the upper wiring layer in the via level layer.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

Abstract: A light-emitting device includes a carrier, a reflection layer, a common electrode and a first semiconductor stack. The carrier has a light-emitting region, an electrical connection region and a trench, which separates the light-emitting region from the electrical connection region. The reflection layer is disposed on a sidewall of the trench. The common electrode is disposed in the electrical connection region. The first semiconductor stack is disposed in the light-emitting region, wherein a first type semiconductor layer of the first semiconductor stack is electrically connected to the common electrode. A light-emitting apparatus including the light-emitting device is also provided.

Abstract: Disclosed is a light transmission type-solar cell module, and a manufacturing method thereof, the manufacturing method of the light transmission type-solar cell module comprising: a first step of forming a thin-film solar cell comprising solar cell patterns by patterning a thin-film solar cell layer located on a glass substrate; a second step of disposing a transparent adhesion layer on the thin-film solar cell; and a third step of adhering a cover glass substrate onto the transparent adhesion layer, wherein the first step is to form the thin-film solar cell comprising the solar cell patterns in such a manner as to pattern the thin solar cell layer located on the glass substrate by carrying out etching using a laser.

Abstract: Provided is a power connector with a waterproof function. A waterproof piece is slideably sleeved at the periphery of a plug. An annular flange is formed on an inner edge of one end of the waterproof piece. A first sealing ring matched with the annular flange is mounted on an outer edge of the plug. Sealing structures matched with each other are respectively arranged on an outer edge of a socket and an inner edge of one end, away from the annular flange, of the waterproof piece. When the waterproof piece is mounted on the socket through the sealing structures, an internal space of the waterproof piece is sealed through the matching between the annular flange and the first sealing ring and the matching between the sealing structures, so that a sealed space is formed in the waterproof piece.

Abstract: Disclosed is a method for manufacturing a multi-junction solar cell including forming a lower cell, depositing a metal thin film layer on the lower cell, heat-treating the metal thin film layer to form a recombination layer and an intermediate charge transport layer, and forming an upper cell on the intermediate charge transport layer. After depositing a metal thin film on top of the lower cell, the deposited metal thin film is heat-treated at a high temperature, so that metal atoms in the metal thin film diffuse to the top of the lower cell to form the recombination layer of silicide at an interface between the metal thin film and the lower cell, and at the same time, oxygen atoms diffuse into the metal thin film to form metal oxide (the charge transport layer) at a surface of the metal thin film.

Abstract: A semiconductor package and a manufacturing method thereof are disclosed.

Abstract: According to an aspect of the present disclosure, a display device includes a substrate having an active area and a non-active area where sub pixels are disposed in the active area, a first assembly line and a second assembly line disposed in the sub pixels and being separated from each other to form a separated space, a light emitting diode disposed in the sub pixels and disposed on the first assembly line and the second assembly line, and a capacitor disposed below the first assembly line and the second assembly line. The capacitor is disposed so as to overlap the separated space formed between the first assembly line and the second assembly line. By this configuration, the light extraction of the display device can be improved.

Abstract: A circuit board according to an embodiment includes: a first insulating layer that does not include a reinforcing material; a conductive pad that protrudes above a surface of the first insulating layer; a dam that protrudes from the surface of the first insulating layer and is disposed outside a region where the conductive pad is disposed on a plane; and a second insulating layer that is disposed below the first insulating layer and includes a reinforcing material. A height of the dam based on the surface of the first insulating layer is higher than a height of the conductive pad.

Abstract: Disclosed is a battery module, which includes a cell stack formed by stacking a plurality of battery cells; a bus bar frame assembly including a bus bar frame configured to cover one longitudinal end and the other longitudinal end of the cell stack and a plurality of bus bars fixed on the bus bar frame and electrically connected to the battery cells; and a FPCB assembly including a first FPCB extending along a longitudinal direction of the cell stack to cover at least a portion of an upper surface of the cell stack, a second FPCB extending from one longitudinal end of the first FPCB and electrically connected to the bus bars, and a connector having a connector pin inserted into a pin insert hole formed in the second FPCB.

Abstract: Provided is a semiconductor device. A semiconductor device is implemented as a semiconductor module package for driving an inverter, the semiconductor device may include: a first upper metal layer in which a plurality of semiconductor chips implementing a right phase switching pattern are disposed along a first direction to form a first row; a second upper metal layer in which a plurality of semiconductor chips implementing a left phase switching pattern are disposed along the first direction to form a second row; a first connection, in the first upper metal layer, connecting a plurality of semiconductor chips disposed along the first row to each other in series and to the second upper metal layer in parallel; and a second connection, in the second upper metal layer, connecting a plurality of semiconductor chips disposed along the second row to each other in series.

Abstract: An anode active material for a secondary battery includes an anode current collector, and an anode active material layer on at least one surface of the anode current collector. The anode active material layer includes an anode active material and an anode binder. The anode active material includes a composite particle that includes a silicon-based active material particle and a solid electrolyte interphase (SEI) layer formed on at least a portion of a surface of the silicon-based active material particle. An F-density defined by Equation 1 is 23% or less.

Abstract: A display device includes a lower substrate having a thin-film transistor disposed thereon; a plurality of upper substrates respectively having light-emitting elements disposed thereon, wherein the plurality of upper substrates are spaced apart from each other and are disposed on the lower substrate; conductive adhesive members disposed between the lower substrate and the upper substrates; a first filling material filling a space between the lower substrate and each of the upper substrates, wherein the first filling material covers the conductive adhesive members; and a second filling material filling a boundary area between adjacent ones of the plurality of upper substrates.

Abstract: The present application relates to a pre-lithiation method of a negative electrode for a lithium secondary battery, a negative electrode for a lithium secondary battery, and a lithium secondary battery including a negative electrode. The pre-lithiation method includes forming a negative electrode current collector layer and a negative electrode active material layer on one surface or both surfaces of the negative electrode current collector layer; forming a silver (Ag)-containing metal layer on a surface of the negative electrode active material layer opposite to a surface of the negative electrode active material layer facing the negative electrode current collector layer; and transferring lithium metal to a surface of the Ag-containing metal layer opposite to a surface of the metal layer facing the negative electrode active material layer. A thickness of the Ag-containing metal layer is 10 nm or greater and 2 ?m or less.

Abstract: An ESD protection device includes a substrate, an epitaxial layer, first to third well regions, and first to sixth doped regions. The first to third well regions are disposed in the epitaxial layer. The third well region is disposed between the first and second well regions. The first and second doped regions are disposed on the first well region and coupled to a pad. The third and fourth doped regions are disposed on the second well region and coupled to a ground terminal. The fifth doped region is disposed on the third well region, and the sixth doped region is disposed in the fifth doped region. The third, fifth, and sixth doped regions have the same conductive type. In response to an electrostatic discharge event occurring on the pad, a discharge path is formed between the pad and the ground terminal.

Abstract: Disclosed are a negative active material for a rechargeable lithium battery and a rechargeable lithium battery. The negative active material for a rechargeable lithium battery includes a silicon-carbon composite; and graphene on a surface of the silicon-carbon composite, wherein a specific surface area of the negative active material is about 1.6 m2/g to about 2 m2/g.

Abstract: A display apparatus includes a substrate partitioned into a central area and a peripheral area disposed adjacent to the central area. The central area includes a display area; a first insulating layer corresponding to the peripheral area of the substrate; at least one slit corresponding to a region of the first insulating layer; and a cladding layer, which covers the at least one slit, on the first insulating layer.

Abstract: A lithium ion-conductive oxide or an all-solid-state battery, wherein the lithium ion-conductive oxide has a crystal structure based on LiTa2PO8, and has at least lithium, tantalum, boron, phosphorus, oxygen, and fluorine as constituent elements, wherein a boron content represented by the following formula (1) is 4.0 to 15.0%, and a fluorine content represented by the following formula (2) is 0.5 to 2.0%: The ? number ? of ? B ? ? atoms / ( the ? number ? of ? B ? atoms + the ? number ? of ? P ? atoms ) × 100 ( 1 ) The ? number ? of ? F ? atoms / ( the ? number ? of ? O ? ? atoms + the ? number ? of ? ? F ? atoms ) × 100.

Abstract: A display device may include pixel areas each including a first area and a second area; and a pixel in each pixel area. The pixel may include first to fifth insulating layers stacked on a substrate; a power line on the substrate; a pixel circuit component provided in the first area, and including a transistor disposed on the substrate and electrically connected to the power line; and an emission component provided in the second area, and including first, second, and third alignment electrodes disposed on the substrate, and a light emitting element disposed between the first, second, and third alignment electrodes. At least one of the first to the fifth insulating layers may be disposed under the first to the third alignment electrodes and may include an inorganic insulating layer.

Abstract: Disclosed are a positive active material for a rechargeable lithium battery, and a rechargeable lithium battery including the same. The positive active material for a rechargeable lithium battery includes a first positive active material including a secondary particle including lithium nickel-based composite oxide wherein in the secondary particle, a plurality of primary particles are aggregated and zirconium on the surface of the secondary particle, and a second positive active material including a single particle including lithium nickel-based composite oxide and zirconium on the surface of the single particle, wherein a ratio of a Zr content (at %) relative to all elements on the surface of the single particle of the second positive active material to a Zr content (at %) to all elements on the surface of the secondary particle of the first positive active material is about 1.5 to about 3.0.