Abstract: A semiconductor device includes a substrate, a first semiconductor element, and a wiring. The substrate includes an obverse surface and a reverse surface facing away from each other in a first direction. The first semiconductor element includes a first electrode and a second electrode. The wiring includes a portion located between the substrate and each of the first electrode and the second electrode. The first electrode and the second electrode are electrically bonded to the wiring. The substrate is formed with a recess recessed from the obverse surface, and the wiring is accommodated in the recess. The wiring includes an exposed surface that is flush with the obverse surface. A roughness of the exposed surface is smaller than a roughness of the reverse surface.

Abstract: A coil module includes a conductor layer, at least one element, and a sealing resin. The conductor layer is formed along a predetermined plane and includes a wiring portion and a helical-shaped coil portion. The at least one element is mounted on the wiring portion. The sealing resin covers the conductor layer and the at least one element. The sealing resin is integrally formed of a single type of resin material and has a predetermined thickness in a first direction perpendicular to the plane.

Abstract: A semiconductor device includes: a first semiconductor element; a second semiconductor element; an insulating element including a first coil; a second coil magnetically coupled to the first coil; and a support substrate on which the first semiconductor element and the second semiconductor element are mounted. The support substrate includes an insulating base member, and a substrate wiring formed on the base member. The substrate wiring includes a first wiring member electrically interposed between the first semiconductor element and the first coil, and a second wiring member electrically interposed between the second semiconductor element and the second coil. The second coil is arranged between the first coil and the base member. The insulating element is supported by the support substrate.

Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes a gate layer formed on an electron supply layer; a first insulating film, formed on the gate layer and having an opening exposing the gate layer; and a gate electrode including a gate field plate portion formed on the first insulating film. A side surface of the first insulating film is located further inside the gate electrode than a side surface of the gate field plate portion. The nitride semiconductor device further includes a second insulating film covering at least side surfaces of each of the gate layer, the first insulating film and the gate electrode. The second insulating film includes a portion embedded in a recessed portion formed by a lower surface of the gate field plate portion, the side surface of the first insulating film and an upper surface of the gate layer.

Abstract: A semiconductor device includes: a first semiconductor element; a second semiconductor element; an insulating element including a first coil; a second coil magnetically coupled to the first coil; and a support substrate on which the first semiconductor element and the second semiconductor element are mounted. The support substrate includes an insulating base member, and a substrate wiring formed on the base member. The substrate wiring includes a first wiring member electrically interposed between the first semiconductor element and the first coil, and a second wiring member electrically interposed between the second semiconductor element and the second coil. The second coil is arranged between the first coil and the base member. The insulating element is supported by the support substrate.

Abstract: A semiconductor device includes a first resin layer having a first obverse surface facing in a thickness direction, a first wiring layer facing the first obverse surface, a semiconductor layer, and a semiconductor element. The semiconductor element includes an electrode electrically connected to the semiconductor layer and facing the first obverse surface and is electrically bonded at the electrode to the first wiring layer. The semiconductor device further includes a second resin layer having a second obverse surface facing the same side as the first obverse surface in the thickness direction, and a second wiring layer facing the second obverse surface and electrically connected to the semiconductor layer. The second wiring layer is in contact with the semiconductor layer. The second wiring layer extends across an outer edge of the semiconductor layer as viewed in the thickness direction.

Abstract: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.

Abstract: A nitride semiconductor device includes an electron transit layer, formed above a substrate, and an electron supply layer formed on the electron transit layer and having a larger band gap than the electron transit layer. A gate layer is formed on the electron supply layer and contains an acceptor impurity. A gate electrode is formed on the gate layer. A source electrode and a drain electrode are located at opposite sides of the gate layer and contact the electron supply layer. The gate electrode has a greater length than the gate layer in a first direction in which the source electrode, the gate layer, and the drain electrode are arranged. The gate electrode contacts an entire upper surface of the gate layer and extends from the gate layer toward at least one of the source electrode and the drain electrode.

Abstract: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Abstract: A semiconductor device includes a substrate, a wire portion, a bonding portion, a semiconductor element, and an encapsulation resin. The substrate includes substrate main and back surfaces facing in opposite directions. The wire portion includes a conductive layer formed on the substrate main surface. The bonding portion includes a first plated layer formed on an upper surface of the wire portion and a first solder layer formed on an upper surface of the first plated layer. The semiconductor element includes an element main surface facing the substrate main surface, an element electrode formed on the element main surface, and a second plated layer formed on a lower surface of the element electrode and bonded to the first solder layer. The encapsulation resin covers the semiconductor element. The bonding portion is larger than the element electrode as viewed in a thickness-wise direction that is perpendicular to the substrate main surface.

Abstract: Provided is an electronic part that includes a first substrate including a first base and a first coil, the first coil being electrically insulated from the first base, a second substrate including a second base and a second coil, the second coil being electrically insulated from the second base, and a support member that supports the first substrate and the second substrate. The first substrate is arranged between the second substrate and the support member in a thickness direction of the support member and overlaps the second substrate as viewed in the thickness direction, the first base is positioned between the first coil and the second coil in the thickness direction, and the first coil and the second coil are magnetically coupled.

Abstract: A coil module includes a substrate, a conductor layer, at least one element, and a sealing resin. The substrate includes a semiconductor material. The conductor layer is formed on the substrate and includes a wiring section and a coil section of a helical shape. The at least one element is mounted on the wiring section. The sealing resin covers the obverse surface of the substrate, the conductor layer, and the at least one element. The at least one element includes, for example, a magnetic detection element.

Abstract: A semiconductor device includes: a substrate including a main surface; a wiring portion including a first conductive layer formed on the main surface, and a first plating layer which is provided on the first conductive layer and on which an oxide film is formed; a semiconductor element including an element mounting surface and an element electrode formed on the element mounting surface; a bonding portion including a second plating layer made of the same material as the first plating layer and laminated on the first conductive layer, and a solder layer laminated on the second plating layer and bonded to the element electrode; and a sealing resin covering the semiconductor element.

Abstract: A semiconductor device, includes: a semiconductor element including an element main surface and an element back surface facing opposite sides in a thickness direction; a wiring part electrically connected to the semiconductor element; an electrode pad electrically connected to the wiring part; a sealing resin configured to cover a part of the semiconductor element; and a first metal layer configured to make contact with the element back surface and exposed from the sealing resin, wherein the semiconductor element overlaps the first metal layer when viewed in the thickness direction.

Abstract: A thermal print head includes: a substrate; a resistor layer supported by the substrate and including a plurality of heat generating portions arranged in a main scanning direction; a wiring layer supported by the substrate and forming an energizing path to the plurality of heat generating portions; and an insulating layer interposed between the substrate and the resistor layer, wherein the substrate has a cavity portion overlapping the plurality of heat generating portions when viewed in a thickness direction of the substrate.

Abstract: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.

Abstract: A coil module includes a conductor layer, at least one element, and a sealing resin. The conductor layer is formed along a predetermined plane and includes a wiring portion and a helical-shaped coil portion. The at least one element is mounted on the wiring portion. The sealing resin covers the conductor layer and the at least one element. The sealing resin is integrally formed of a single type of resin material and has a predetermined thickness in a first direction perpendicular to the plane.

Abstract: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.