Abstract: An electronic device includes a semiconductor substrate, an electronic element mounted on the substrate, a conductive layer electrically connected to the electronic element, a sealing resin and a columnar conductor. The substrate has a recess formed in its obverse surface. The electronic element is mounted on the bottom surface of the recess. The conductive layer has an obverse-surface contacting region located on the obverse surface of the substrate. The sealing resin is disposed in at least a part of the recess for covering at least a part of the obverse surface of the substrate. The columnar conductor is electrically connected to the obverse-surface contacting region of the conductive layer and exposed from the sealing resin at a side opposite to the obverse surface of the substrate.

Abstract: The present invention provides an optical semiconductor device for improving minimization and increase of detection precision.

Abstract: A semiconductor light-emitting device includes a substrate, an LED chip, a control element, a conductive layer and an insulating layer. The substrate, made of a semiconductor material, has an obverse surface and a reverse surface spaced apart from each other in the thickness direction of the substrate. The control element controls light emission of the LED chip. The conductive layer is electrically connected to the LED chip and the control element. The insulating layer is arranged between at least apart of the conductive layer and the substrate. The substrate has a recess formed in the obverse surface, and the LED chip is housed in the recess. The control element is arranged between the LED chip and the reverse surface in the thickness direction of the substrate.

Abstract: An electronic device includes a semiconductor substrate, an electronic element mounted on the substrate, a conductive layer electrically connected to the electronic element, a sealing resin and a columnar conductor. The substrate has a recess formed in its obverse surface. The electronic element is mounted on the bottom surface of the recess. The conductive layer has an obverse-surface contacting region located on the obverse surface of the substrate. The sealing resin is disposed in at least a part of the recess for covering at least a part of the obverse surface of the substrate. The columnar conductor is electrically connected to the obverse-surface contacting region of the conductive layer and exposed from the sealing resin at a side opposite to the obverse surface of the substrate.

Abstract: Provided is a magnetism detection device by which it is possible to achieve a reduction in size and an increase in accuracy. A magnetism detection device includes: a magneto-impedance element; a magnetic field direction changing body; and a substrate that is formed of a semiconductor material and has an element arrangement recessed portion bottom surface and a back surface that face mutually opposite sides in a thickness direction, and a through-hole that reaches the element arrangement recessed portion bottom surface and the back surface and has a cross-sectional dimension that increases toward the main surface starting from the element arrangement recessed portion bottom surface. The magneto-impedance element is mounted on the element arrangement recessed portion bottom surface, and the magnetic field direction changing body is accommodated in the through-hole.

Abstract: An electronic device, suitable for achieving a smaller size, includes a semiconductor substrate having a main surface and a back surface opposite to the main surface, a main electronic element arranged on the substrate, and a conducting layer electrically connected to the main electronic element. The substrate is formed with an element arrangement recessed portion that is recessed from the main surface and in which the main electronic element is arranged. The element arrangement recessed portion has a bottom surface facing in the thickness direction, and a side surface inclined with respect to the thickness direction of the substrate. The electronic device includes an auxiliary electronic element formed on the side surface of the element arrangement recessed portion.

Abstract: A semiconductor device includes a semiconductor substrate, a conducting portion, and a sealing resin. The substrate has a main surface and is formed with a recessed portion in the main surface. The conducting portion is formed on the substrate. The sealing resin is disposed in the recessed portion. The conducting portion includes a first wiring layer and a second wiring layer both formed in the recessed portion. The second wiring layer is closer to the main surface than is the first wiring layer in the normal direction of the main surface.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Abstract: The semiconductor device of the present invention includes an insulating layer, a copper wiring for wire connection formed on the insulating layer, a shock absorbing layer formed on an upper surface of the copper wiring, the shock absorbing layer being made of a metallic material with a hardness higher than copper, a bonding layer formed on the shock absorbing layer, the bonding layer having a connection surface for a wire, and a side protecting layer covering a side surface of the copper wiring, wherein the side protecting layer has a thickness thinner than a distance from the upper surface of the copper wiring to the connection surface of the bonding layer.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate insulating film. The gate electrode has a high-conductivity portion formed to cover the gate insulating film with a relatively high conductivity and a low-conductivity portion formed on a region inside the high-conductivity portion with a relatively low conductivity.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate insulating film. The gate electrode has a high-conductivity portion formed to cover the gate insulating film with a relatively high conductivity and a low-conductivity portion formed on a region inside the high-conductivity portion with a relatively low conductivity.

Abstract: The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate insulating film. The gate electrode has a high-conductivity portion formed to cover the gate insulating film with a relatively high conductivity and a low-conductivity portion formed on a region inside the high-conductivity portion with a relatively low conductivity.

Abstract: A semiconductor device according to the present invention includes: a semiconductor layer; an element separating portion, formed in a top layer portion of the semiconductor layer and separating, in the semiconductor layer, a first element forming region for forming a first conductive type MOSFET and a second element forming region for forming a second conductive type MOSFET; a first gate insulating film, selectively formed on a top surface of the semiconductor layer in the first element forming region; a first gate electrode, formed on the first gate insulating film; a first sidewall, formed at a periphery of the first gate insulating film and the first gate electrode; a second gate insulating film, selectively formed on a top surface of the semiconductor layer in the second element forming region; a second gate electrode, formed on the second gate insulating film; and a second sidewall, formed at a periphery of the second gate insulating film and the second gate electrode.

Abstract: The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.

Abstract: The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.

Abstract: A semiconductor device according to the present invention includes: a semiconductor layer; an element separating portion, formed in a top layer portion of the semiconductor layer and separating, in the semiconductor layer, a first element forming region for forming a first conductive type MOSFET and a second element forming region for forming a second conductive type MOSFET; a first gate insulating film, selectively formed on a top surface of the semiconductor layer in the first element forming region; a first gate electrode, formed on the first gate insulating film; a first sidewall, formed at a periphery of the first gate insulating film and the first gate electrode; a second gate insulating film, selectively formed on a top surface of the semiconductor layer in the second element forming region; a second gate electrode, formed on the second gate insulating film; and a second sidewall, formed at a periphery of the second gate insulating film and the second gate electrode.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate insulating film. The gate electrode has a high-conductivity portion formed to cover the gate insulating film with a relatively high conductivity and a low-conductivity portion formed on a region inside the high-conductivity portion with a relatively low conductivity.