Abstract: The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.

Abstract: A semiconductor device includes semiconductor elements and at least one dummy pattern. Each or at least some of the semiconductor elements has a Damascene gate structure or a replacing gate structure and is located in element-forming regions. In addition, at least a dummy pattern is located in a region different from the element-forming regions. The dummy pattern may have a semiconductor element structure of the same or different kind from the Damascene gate structure or replacing gate structure. The dummy pattern may be a pattern of an insulating film, an interface transistor, or an analog circuit capacitor electrode instead of the dummy gate.

Abstract: A semiconductor chip (3) to be positioned with a front face thereof downward for formation of a chip-on-chip structure has electrode marks (35) provided on a back face (34) thereof. The electrode marks (35) are respectively provided in association with a plurality of electrodes (33) provided on the front face (31) of the semiconductor chip in the same arrangement as the arrangement of the electrodes (33). The arrangement of the electrode marks (35) represents the arrangement of the electrodes (33) on the front face (31) when viewed from the side of the back face (34) of the semiconductor chip 3. Therefore, the semiconductor chip (3) can easily be positioned with the front face downward on the basis of the electrode marks (35).

Abstract: A semiconductor device includes semiconductor elements and at least one dummy pattern. Each or at least some of the semiconductor elements has a Damascene gate structure or a replacing gate structure and is located in element-forming regions. In addition, at least a dummy pattern is located in a region different from the element-forming regions. The dummy pattern may have a semiconductor element structure of the same or different kind from the Damascene gate structure or replacing gate structure. The dummy pattern may be a pattern of an insulating film, an interface transistor, or an analog circuit capacitor electrode instead of the dummy gate.

Abstract: A semiconductor chip (3) to be positioned with a front face thereof downward for formation of a chip-on-chip structure has electrode marks (35) provided on a back face (34) thereof. The electrode marks (35) are respectively provided in association with a plurality of electrodes (33) provided on the front face (31) of the semiconductor chip in the same arrangement as the arrangement of the electrodes (33). The arrangement of the electrode marks (35) represents the arrangement of the electrodes (33) on the front face (31) when viewed from the side of the back face (34) of the semiconductor chip 3. Therefore, the semiconductor chip (3) can easily be positioned with the front face downward on the basis of the electrode marks (35).

Abstract: A semiconductor chip (3) to be positioned with a front face thereof downward for formation of a chip-on-chip structure has electrode marks (35) provided on a back face (34) thereof. The electrode marks (35) are respectively provided in association with a plurality of electrodes (33) provided on the front face (31) of the semiconductor chip in the same arrangement as the arrangement of the electrodes (33). The arrangement of the electrode marks (35) represents the arrangement of the electrodes (33) on the front face (31) when viewed from the side of the back face (34) of the semiconductor chip 3. Therefore, the semiconductor chip (3) can easily be positioned with the front face downward on the basis of the electrode marks (35).

Abstract: A semiconductor device having a solid device, and a semiconductor chip bonded to the solid device with a back face thereof being opposed to a front face of the solid device. The semiconductor chip has a back electrode provided on the back face thereof and electrically connected to an electrode provided on a front face thereof through a through-hole. The solid device may be a wiring board or another semiconductor chip. Further another semiconductor chip may be stacked and bonded onto the front face of the semiconductor chip.

Abstract: A method of fabricating a semiconductor device comprises the steps of forming an insulating layer on a semiconductor substrate including a first layer, forming a through hole in the insulating layer so as to reach for the first layer, charging an oxide dielectric substance into the through hole to form an oxide dielectric section therein, and forming a second layer on the oxide dielectric section.

Abstract: In the present invention, an electrode having a structure in which a barrier layer 16 and a seed layer 17 are stacked on an electrode 12b is formed. In the electrode having such a structure, when an Al wiring film is formed, the barrier layer 16 and the seed layer 17 may be stacked by sputtering after the wiring film is formed. That is, at the time of forming wiring, the barrier layer 16 and the seed layer 17 may be stacked on the surface of the wiring. Accordingly, the formation of a bump and particularly, the formation of the seed layer for the bump are performed together with the wiring formation and protective film formation processing. Accordingly, the steps of fabricating a semiconductor are simplified, so that a time period required for the fabrication is shortened.