Abstract: A memory device includes a configurable address register having a first set of input buffers coupled to a first set on address bus terminals and a second set of input buffers coupled to a second set of address bus terminals. In a first addressing configuration, address signals are simultaneously applied to the address bus terminals in the first and second sets, and they are simultaneously stored in respective address registers. In a second addressing configuration, a plurality of sets of address signals are sequentially applied to the address bus terminals in only the first set of address bus terminals. Each set of address signals is then stored in a different address register.

Abstract: Systems and methods for reducing delays between successive write and read accesses in multi-bank memory devices are provided. Computer circuits modify the relative timing between addresses and data of write accesses, reducing delays between successive write and read accesses. Memory devices that interface with these computer circuits use posted write accesses to effectively return the modified relative timing to its original timing before processing the write access.

Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

Abstract: Systems and methods for reducing delays between successive write and read accesses in multi-bank memory devices are provided. Computer circuits modify the relative timing between addresses and data of write accesses, reducing delays between successive write and read accesses. Memory devices that interface with these computer circuits use posted write accesses to effectively return the modified relative timing to its original timing before processing the write access.

Abstract: A data input circuit including a first input register, a second input register, and a write driver connected to the second input register. The first and second input registers are preferably series-connected. In the preferred embodiment, a multiplexer selectively connects one of the first and second input registers to the write driver. The input circuit may be embodied in a memory device and in memory systems.

Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

Abstract: A zero power standby mode in a memory device used in a system, such as a battery powered hand held device. By disconnecting the internal power supply bus on the memory device from the external power supply during standby mode, the junction leakage and gate induced drain leakage can be eliminated to achieve a true zero-power standby mode. A p-channel field effect transistor (FET) may be used to gate the external power supply such that the internal power supply bus on the memory device may be disconnected from the external power supply.

Abstract: A data input circuit including a first input register, a second input register, and a write driver connected to the second input register. The first and second input registers are preferably series-connected. In the preferred embodiment, a multiplexer selectively connects one of the first and second input registers to the write driver. The input circuit may be embodied in a memory device and in memory systems.

Abstract: A data input circuit including a first input register, a second input register, and a write driver connected to the second input register. The first and second input registers are preferably series-connected. In the preferred embodiment, a multiplexer selectively connects one of the first and second input registers to the write driver. The input circuit may be embodied in a memory device and in memory systems.

Abstract: A memory device includes a data array, a tag array, and control logic. The data array is adapted to store a plurality of data array entries. The tag array is adapted to store a plurality of data array entries corresponding to the data array entries. The control logic adapted to access a subset of the data array entries in the data array using a burst access and to access the tag array during the burst access. A method for accessing a memory device is provided. The memory device includes a data array and a tag array. The method includes receiving a data array burst access command. The data array is accessed in response to the data array burst access command. A tag array access is received. The tag array is accessed in response to the tag array access command while the data array is being accessed.

Abstract: The present invention is directed to a logic circuit for controlling the read latency time of a memory circuit. The logic circuit includes a first circuit for producing a plurality of values derived from a read enable signal. Each of the values represents the read enable signal delayed by a predetermined period of time. The logic circuit also includes a second circuit for selecting one of the plurality of values in response to at least one control signal. The selected value enables a read operation of the memory circuit. A method for controlling the read latency time of a memory circuit is also presented.

Abstract: A memory device includes a data array, a tag array, and control logic. The data array is adapted to store a plurality of data array entries. The tag array is adapted to store a plurality of data array entries corresponding to the data array entries. The control logic adapted to access a subset of the data array entries in the data array using a burst access and to access the tag array during the burst access. A method for accessing a memory device is provided. The memory device includes a data array and a tag array. The method includes receiving a data array burst access command. The data array is accessed in response to the data array burst access command. A tag array access is received. The tag array is accessed in response to the tag array access command while the data array is being accessed.

Abstract: A data input circuit including a first input register, a second input register, and a write driver connected to the second input register. The first and second input registers are preferably series-connected. In the preferred embodiment, a multiplexer selectively connects one of the first and second input registers to the write driver. The input circuit may be embodied in a memory device and in memory systems.

Abstract: An expandable-set, tag, cache circuit for use with a data cache memory comprises a tag memory divided into a first set and a second set for storing, under a single address location, first and second tag fields representative of first and second data, respectively. The tag memory also stores first and second signals representative of which of the sets is the least recently used. A comparator is responsive to a tag field of an address representative of requested data as well as to a first tag field output from the tag memory for producing an output signal indicative of a match therebetween. A second comparator is responsive to the same tag field of the address and to a second tag field output from the tag memory for producing an output signal indicative of a match therebetween. A first logic gate is responsive to the first and second comparators for producing an output signal indicative of the availability of the requested data in the data cache memory.

Abstract: The present invention is directed to a logic circuit for controlling the read latency time of a memory circuit. The logic circuit comprises a first circuit for producing a plurality of values derived from a read enable signal. Each of the values represents the read enable signal delayed by a predetermined period of time. The logic circuit also comprises a second circuit for selecting one of the plurality of values in response to at least one control signal. The selected value enables a read operation of the memory circuit. A method for controlling the read latency time of a memory circuit is also disclosed.

Abstract: A synchronous burst SRAM device comprising an SRAM core having a memory array, write drivers, sense amplifiers, and I/O buffers; an address register for receiving addresses for the memory array in the SRAM core; a burst address generator coupled to the address register for rapidly generating additional addresses using at least one address bit stored in the address register; an input for receiving an external address signal indicating that an external address is ready to be loaded into the address register; three chip enable inputs for receiving chip enable signals; chip enable and select logic coupled to the three chip enable inputs to perform the dual tasks of (1) selectively enabling or disabling the synchronous burst SRAM device and (2) selectively permitting access to the SRAM core when the SRAM device is enabled in accordance with a boolean function of the chip enable signals at the three chip enable inputs, the chip enable and select logic outputting an SRAM core enable signal resulting from the boolean

Abstract: The present invention is directed to a logic circuit for controlling the read latency time of a memory circuit. The logic circuit includes a first circuit for producing a plurality of values derived from a read enable signal. Each of the values represents the read enable signal delayed by a predetermined period of time. The logic circuit also includes a second circuit for selecting one of the plurality of values in response to at least one control signal. The selected value enables a read operation of the memory circuit. A method for controlling the read latency time of a memory circuit is also presented.

Abstract: A circuit for controlling the data transmissions among two devices capable of transmitting information, via an output buffer, over a bus, so as to prevent bus contention, is comprised of a first device enabled circuit for generating a first device enabled signal indicative of whether one of the devices is enabled to transmit information. A second device enabled circuit generates a second device enabled signal indicative of whether the other of the devices is enabled to transmit information. A circuit, which is in communication with the first and second device enabled circuits, generates an output enable signal. The output enable signal is input to one of the devices to create a delay between the end of a transmission of information by one device and the beginning of a transmission by the other device.