Abstract: A logic circuit is operated in a normal mode, with a supply voltage coupled to a supply rail of the logic circuit, and with a ground rail of the logic circuit grounded; It is determined that at least a portion of the logic circuit has experienced degradation due to bias temperature instability. Responsive to the determining, the logic circuit is operated in a power napping mode, with the supply voltage coupled to the ground rail of the circuit, with the supply rail of the circuit grounded, and with primary inputs of the circuit toggled between logical zero and logical one at low frequency. A logic circuit and corresponding design structures are also provided.

Abstract: Methods and systems for computing threshold voltage degradation of transistors in an array of memory cells are disclosed. In accordance with one method, a process that models an expected usage of the array is selected. In addition, a hardware processor can run the process to populate the array with data over time to simulate the expected usage of the array. The method further includes compiling data that detail different durations at which each of the memory cells in the array stores 1 or at which each of the memory cells in the array stores 0. For each separate grouping of memory cells that share a common duration of the different compiled durations, a threshold voltage degradation is determined for each transistor in the corresponding grouping of cells based on at least one biased temperature instability model.

Abstract: Methods and systems for computing threshold voltage degradation of transistors in an array of memory cells are disclosed. In accordance with one method, a process that models an expected usage of the array is selected. In addition, a hardware processor can run the process to populate the array with data over time to simulate the expected usage of the array. The method further includes compiling data that detail different durations at which each of the memory cells in the array stores 1 or at which each of the memory cells in the array stores 0. For each separate grouping of memory cells that share a common duration of the different compiled durations, a threshold voltage degradation is determined for each transistor in the corresponding grouping of cells based on at least one biased temperature instability model.

Abstract: A system for estimating delay deterioration in an integrated circuit includes a degradation estimator for estimating degradation for each of one or more lifetimes in at least one characteristic of each device defined within the integrated circuit using voltages and logic values monitored during a simulation of the integrated circuit. A netlist generator generates an end-of-life netlist for each of the one or more lifetimes in which the at least one device characteristic of each device has been modified to reflect each of the estimated degradations. A timing analyzer performs a timing analysis on each of the end-of-life netlists to determine static or statistical circuit path delays over the one or more lifetimes.

Abstract: Systems and methods for error recovery include determining an error in at least one stage of a plurality of stages during a first cycle on a hardware circuit, each of the plurality of stages having a main latch and a shadow latch. A first signal is transmitted to an output stage of the at least one stage to stall the main latch and the shadow latch of the output stage during a second cycle. A second signal is transmitted to an input stage of the at least one stage to stall the main latch of the input stage during the second cycle and to stall the main latch and the shadow latch of the input stage during a third cycle. Data is restored from the shadow latch to the main latch for the at least one stage and the input stage to recover from the error.

Abstract: A light emitting diode including a magnetic structure and a method of fabricating the same are disclosed. The magnetic structure composed of passivation layers and a magnetic layer is disposed inside a luminous structure composed of an active layer and a semiconductor layer. In the light emitting diode, the magnetic structure including the magnetic layer is disposed on a side surface of the active layer to improve recombination rate of charge carriers for light emission by increasing influence of a magnetic field applied to the active layer. In addition, the light emitting diode according to the present invention allows change in position of the magnetic structure including the magnetic layer depending upon an etched shape of the luminous structure, thereby realizing various magnetic field distributions.

Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.

Abstract: A method for estimating delay deterioration in an integrated circuit comprising estimating degradation in at least one characteristic of each device defined within the integrated circuit using voltages and logic values monitored during a simulation of the digital circuit. Generating an end-of-life netlist in which the at least one device characteristic of each device has been modified to reflect the estimated degradation or estimating a change in timing delay of each device directly from the estimated degradation of the at least one characteristic of each device. A timing analysis is performed using the estimated change in timing delay of each device to determine circuit path delays. The timing analysis is static or statistical.

Abstract: Systems and methods for error recovery include determining an error in at least one stage of a plurality of stages during a first cycle on a hardware circuit, each of the plurality of stages having a main latch and a shadow latch. A first signal is transmitted to an output stage of the at least one stage to stall the main latch and the shadow latch of the output stage during a second cycle. A second signal is transmitted to an input stage of the at least one stage to stall the main latch of the input stage during the second cycle and to stall the main latch and the shadow latch of the input stage during a third cycle. Data is restored from the shadow latch to the main latch for the at least one stage and the input stage to recover from the error.

Abstract: Systems and methods for error recovery include determining an error in at least one stage of a plurality of stages during a first cycle on a hardware circuit, each of the plurality of stages having a main latch and a shadow latch. A first signal is transmitted to an output stage of the at least one stage to stall the main latch and the shadow latch of the output stage during a second cycle. A second signal is transmitted to an input stage of the at least one stage to stall the main latch of the input stage during the second cycle and to stall the main latch and the shadow latch of the input stage during a third cycle. Data is restored from the shadow latch to the main latch for the at least one stage and the input stage to recover from the error.

Abstract: A touch sensing apparatus includes a touch screen panel including first electrodes along a first direction and second electrodes along a second direction crossing the first direction to form capacitances with the first electrodes, a driving circuit configured to supply a driving signal to the first electrodes; and a sensing circuit configured to detect output sensing signals from the second electrodes and recognize a touch input based on the output sensing signals. The sensing circuit includes a switching unit configured to modulate the output sensing signals by providing codes as respective input sensing signals to the second electrodes, an amplifying unit configured to amplify the modulated sensing signals, an analog-digital conversion unit configured to convert the amplified sensing signals into digital sensing signals, and a controller configured to demodulate the digital sensing signals and detect a touch input and its position from the demodulated sensing signals.

Abstract: A logic circuit is operated in a normal mode, with a supply voltage coupled to a supply rail of the logic circuit, and with a ground rail of the logic circuit grounded; It is determined that at least a portion of the logic circuit has experienced degradation due to bias temperature instability. Responsive to the determining, the logic circuit is operated in a power napping mode, with the supply voltage coupled to the ground rail of the circuit, with the supply rail of the circuit grounded, and with primary inputs of the circuit toggled between logical zero and logical one at low frequency. A logic circuit and corresponding design structures are also provided.

Abstract: The present invention relates to a method for manufacturing a color filter and a color filter manufactured by using the same. More particularly, the present invention pertains to a method for manufacturing a color filter, which includes performing plasma treatment of a black matrix (BM) pattern formed on a substrate to increase a difference in ink repellency of the black matrix pattern and a pixel unit, and a color filter manufactured by using the same. When the production method of the present invention is used, it is possible to provide the color filter in which color mixing does not occur in a pixel unit or between pixel units during discharging of ink by using an inkjet printing process, discoloration due to unfilling does not occur, a surface is uniform, and there is an insignificant step in the pixel unit or between the pixel units.

Abstract: There is provided an alternating current supply noise reducer for a 3D chip stack having two or more strata. Each of the strata has a respective one of a plurality of power distribution circuits and a respective one of a plurality of clock distribution circuits arranged thereon. The alternating current supply noise reducer includes a plurality of voltage droop sensors and a plurality of skew adjustors. The plurality of voltage droop sensors is for detecting alternating current supply noise in the plurality of power distribution circuits. One or more voltage droop sensors are respectively arranged on at least some of the strata. The plurality of skew adjusters are for delaying one or more clock signals provided by the plurality of clock distribution circuits responsive to an amount of the alternating current supply noise. Each skew adjuster is respectively arranged on the at least some of the strata.

Abstract: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. The clock distribution network includes a plurality of clock distribution circuits, each being arranged on a respective one of the two or more strata for providing the global clock signals to various chip locations. Each of the plurality of clock distribution circuits includes a resonant circuit for providing stratum-to-stratum coupling for the clock distribution network. The resonant circuit includes at least one capacitor and at least one inductor.

Abstract: A dual-cell spin-transfer torque random-access memory including a first magnetic tunneling junction and a second magnetic tunneling junction. An access circuit is coupled to the first and second magnetic tunneling junctions such that independent read and write access is provided to bits stored in the first and second magnetic tunneling junctions.

Abstract: A method for estimating delay deterioration in an integrated circuit comprising estimating degradation in at least one characteristic of each device defined within the integrated circuit using voltages and logic values monitored during a simulation of the digital circuit. Generating an end-of-life netlist in which the at least one device characteristic of each device has been modified to reflect the estimated degradation or estimating a change in timing delay of each device directly from the estimated degradation of the at least one characteristic of each device. A timing analysis is performed using the estimated change in timing delay of each device to determine circuit path delays. The timing analysis is static or statistical.

Abstract: A method for estimating delay deterioration in an integrated circuit comprising estimating degradation in at least one characteristic of each device defined within the integrated circuit using voltages and logic values monitored during a simulation of the digital circuit. Generating an end-of-life netlist in which the at least one device characteristic of each device has been modified to reflect the estimated degradation or estimating a change in timing delay of each device directly from the estimated degradation of the at least one characteristic of each device. Performing a timing analysis using the estimated change in timing delay of each device to determine circuit path delays. The timing analysis being static or statistical.

Abstract: A memory circuit includes a plurality of bit line structures (each including a true and a complementary bit line), a plurality of word line structures intersecting the plurality of bit line structures to form a plurality of cell locations; and a plurality of cells located at the plurality of cell locations. Each of the cells includes a logical storage element, a first access transistor selectively coupling a given one of the true bit lines to the logical storage element, and a second access transistor selectively coupling a corresponding given one of the complementary bit lines to the logical storage element. One or both of the first and second access transistors are configured with asymmetric current characteristics to enable independent enhancement of READ and WRITE margins. Also included within the 6-T scope are one or more design structures embodied in a machine readable medium, comprising circuits as set forth herein.

Abstract: A system has at least a first circuit portion and a second circuit portion. The first circuit portion is operated at normal AC frequency. The second circuit portion is operated in a back-up mode at low AC frequency, such that the second circuit portion can rapidly come-online but has limited temperature bias instability degradation. The second circuit portion can then be brought on-line and operated at the normal AC frequency. A system including first and second circuit portions and a control unit, as well as a computer program product, are also provided.