Abstract: A method for formation of a copper diffusion barrier film using aluminum is disclosed. In the method, thin aluminum (Al) film is deposited on a dielectric, and a surface of the deposited aluminum film is plasma treated with NH3, thereby transforming the surface of the plasma treated aluminum film into a nitride film basically composed of aluminum nitride (AlxNy), and an aluminum film is deposited on the surface of the transformed aluminum nitride film, and copper is deposited on the surface of the deposited aluminum film. Therefore, because the diffusion of copper is suppressed, the problem that leakages between metal lines increase as pitches between the metals decrease due to high integrity of parts of semiconductor can be settled.

Abstract: After a trench is formed into a substrate, a polysilicon layer is formed on sidewalls and a bottom of the trench. A thermal oxidation is performed on the polysilicon layer such that a polysilicon oxide layer is formed thereon. Then, a portion of the polysilicon oxide layer is removed such that the polysilicon layer is exposed on the bottom of the trench while the sidewalls of the trench are still covered by the polysilicon oxide layer. A TEOS-ozone oxide layer is deposited on the substrate to fill the trench. Since the bottom of the trench has a better condition for the deposition of TEOS-ozone oxide layer than that of the sidewalls, a gap fill quality can be enhanced.

Abstract: A surface of a metal wiring formed over a portion of a substrate is oxidized and annealed to generate a stress reduction layer. Then a passsivation layer is deposited over the stress reduction layer and the remaining portions of the substrate so that a semiconductor with the stress reduction layer may be formed.

Abstract: Disclosed are functionalized styrene derivatives containing carbazole and their anionic polymerization. Styrene derivatives containing carbazole, and homopolymers or copolymers of the styrene derivatives can be synthesized by the anionic polymerization method. Thusly synthesized high molecular weight polymer containing carbazole has advantages of thermal stability, optical properties, and defined molecular weight and limited molecular weight distribution.

Abstract: The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom.

Abstract: Disclosed are polyarylene ether sulfides and polyarylene ether sulfones for optical device and a method for preparing the same. Polyarylene ether sulfides containing fluorine and polyarylene ether sulfones containing fluorine are synthesized through polycondensation of pentafluorophenyl sulfide and pentafluorophenyl sulfone monomer with dihydroxy monomer. In addition, by attaching ethynyl phenol and phenylethynylphenol to terminals of the high molecular weight polymer, solvent resistance of the polymer is increased. Thus, the high molecular weight polymers prepared by very simplified process have low light loss, excellent resistance for heat, solvent and water, and so can be used to manufacture inactive optical waveguide devices.

Abstract: Disclosed is a method of post treatment for a metal line of semiconductor device, wherein an aluminum oxide layer is employed as a protecting layer of metal line, thereby improving reliability thereof. The disclosed comprises the steps of: forming aluminum having a predetermined thickness on the entire surface of substrate having the metal line by performing a deposition process; performing a plasma treatment on a predetermined processing condition, thereby changing the aluminum into a lower barrier layer of aluminum oxide layer; and forming an inter metal dielectric layer on the entire surface of the lower barrier layer by performing a deposition process.

Abstract: The present invention relates to vinyl-phenyl monomers and polymers prepared therefrom. More particularly, the present invention is to provide the vinyl-phenyl monomers expressed by formula (1) which are capable of various polymerization such as radical polymerization, cation polymerization, anion polymerization and metallocene catalyzed polymerization due to resonance effect of phenyl group and changing characteristics variously and thus, suitable in the synthesis of general-purpose polymers which can be used in photo-functional materials by forming a complex with a metal component having an optical characteristic.

Abstract: The present invention relates to polyisocyanates having various functional groups and a preparing method thereof. More particularly, the present invention is to prepare polyisocyantes by living anion polymerization under suitable temperature and pressure enough to protect metal ions to prevent from the formation of trimer of the isocyanate through depolymerization and thus provide polyisocyanates having alkyl, silyl, siloxane and carbamate groups with desirable molecular weight, molecular weight distribution and improved physical properties.

Abstract: Disclosed are polyarylene ether sulfides and polyarylene ether sulfones for optical device and a method for preparing the same. Polyarylene ether sulfides containing fluorine and polyarylene ether sulfones containing fluorine are synthesized through polycondensation of pentafluorophenyl sulfide and pentafluorophenyl sulfone monomer with dihydroxy monomer. In addition, by attaching ethynyl phenol and phenylethynylphenol to terminals of the high molecular weight polymer, solvent resistance of the polymer is increased. Thus, the high molecular weight polymers prepared by very simplified process have low light loss, excellent resistance for heat, solvent and water, and so can be used to manufacture inactive optical waveguide devices.

Abstract: Disclosed are functionalized styrene derivatives containing carbazole and their anionic polymerization. Styrene derivatives containing carbazole, and homopolymers or copolymers of the styrene derivatives can be synthesized by the anionic polymerization method. Thusly synthesized high molecular weight polymer containing carbazole has advantages of thermal stability, optical properties, and defined molecular weight and limited molecular weight distribution.

Abstract: This invention discloses a planarization method for semiconductor device. The planarization method includes the steps of: providing a semiconductor substrate in which metal patterns are formed with various pattern densities; depositing a porous oxide layer over the semiconductor substrate so as to cover the metal patterns; plasma-treating surface of the porous oxide layer; and polishing the plasma-treated porous oxide layer by chemical mechanical polishing.

Abstract: A cell adhesive material with excellent cell adhesion and cell proliferating property and a method for producing the same are provided. The adhesion and proliferation of cells can be improved remarkably by the surface modification of a cell adhesive material comprising a polymer material containing carbon as a constituting element, such as polystyrene or segmented polyurethane, wherein at least a part of the surface is modified by ion bombardment through ion implantation. The method for producing such cell adhesive material comprises implanting ions into at least a part of the surface of the polymer material. The cell adhesive material and the method for producing the same are promising for application to cell culture petri dishes and hybrid-type medicinal materials.