Abstract: There is further provided a transparent adhesive composition including a silicon acrylate monomer; a silanol compound; an alkoxy silane compound; and an optical initiator.

Abstract: A multilayer ceramic capacitor includes an active region including a plurality of dielectric layers, and first and second internal electrodes alternately disposed with each of the dielectric layers interposed therebetween; and upper and lower cover regions including at least one ferromagnetic layer and disposed on and below the active region, respectively.

Abstract: The present invention related to ferromagnetic nano-metal powders and more particularly, to ferromagnetic nano-metal powders for increasing packing density by decreasing the porosity between micro-sized soft magnetic metal powders. According to an embodiment of the present invention, the ferromagnetic nano-metal powder allows high packing density and high magnetic property at a high frequency to fill the pores inevitably generated during the manufacturing process of an inductor using the soft magnetic metal powders.

Abstract: The present invention related to ferromagnetic nano-metal powders and more particularly, to ferromagnetic nano-metal powders for increasing packing density by decreasing the porosity between micro-sized soft magnetic metal powders. According to an embodiment of the present invention, the ferromagnetic nano-metal powder allows high packing density and high magnetic property at a high frequency to fill the pores inevitably generated during the manufacturing process of an inductor using the soft magnetic metal powders.

Abstract: Provided is a composite for manufacturing a chip part for a high frequency, and the composite includes a magnetic powder having a relatively spherical shape, and a metal magnetic body particle having a relatively more amorphous shape than that of the magnetic powder and a lower hardness than that of the magnetic powder.

Abstract: A cell transistor of a flash memory device includes a semiconductor substrate, a source region, a drain region, a floating gate, an inter-gate insulating layer, and a control gate, wherein the floating gate has a tip protruding into an end portion of the source region. With the application of erasing voltages to the source region and the control gate, an intense electric field is induced on the tip of the floating gate. Accordingly, an erasing efficiency of the cell transistor can be enhanced.

Abstract: A cell transistor of a flash memory device includes a semiconductor substrate, a source region, a drain region, a floating gate, an inter-gate insulating layer, and a control gate, wherein the floating gate has a tip protruding into an end portion of the source region. With the application of erasing voltages to the source region and the control gate, an intense electric field is induced on the tip of the floating gate. Accordingly, an erasing efficiency of the cell transistor can be enhanced.

Abstract: A cell transistor of a flash memory device includes a semiconductor substrate, a source region, a drain region, a floating gate, an inter-gate insulating layer, and a control gate, wherein the floating gate has a tip protruding into an end portion of the source region. With the application of erasing voltages to the source region and the control gate, an intense electric field is induced on the tip of the floating gate. Accordingly, an erasing efficiency of the cell transistor can be enhanced.

Abstract: A split-gate flash memory cell and a manufacturing method thereof is provided. After a tunnel oxide layer is formed over a substrate, a peak floating gate layer of conducting material is formed over a portion of the tunnel oxide layer. An inter-gate insulating layer and a control gate layer are formed over the peak floating gate layer and then the control gate layer, the inter-gate insulating layer, the peak floating gate layer and the tunnel oxide layer are sequentially etched down to generate a control gate, an inter-gate insulating region, a peak floating gate and a tunnel oxide region. Finally, a source and a drain are defined adjoining the tunnel oxide region by using a self-align technique.

Abstract: A split-gate flash memory cell and a manufacturing method thereof is provided. After a tunnel oxide layer is formed over a substrate, a peak floating gate layer of conducting material is formed over a portion of the tunnel oxide layer. An inter-gate insulating layer and a control gate layer are formed over the peak floating gate layer and then the control gate layer, the inter-gate insulating layer, the peak floating gate layer and the tunnel oxide layer are sequentially etched down to generate a control gate, an inter-gate insulating region, a peak floating gate and a tunnel oxide region. Finally, a source and a drain are defined adjoining the tunnel oxide region by using a self-align technique.

Abstract: The present invention relates to a method of fabricating a semiconductor device which reduces The leakage current by controlling an etch of a field oxide layer when a contact hole is formed. The present invention includes the steps of forming a in a semiconductor device is reduced. A field oxide layer defining an active area and a field area is formed on a semiconductor substrateof a first conductive type, forming a . A gate is formed on the an active area of the semiconductor substrate. by inserting a gate insulating layer between the semiconductor substrate and the gate, forming impurity regions of a second conductive type in the semiconductor are formed on the substrate in use of using the gate as a mask, forming a . A first insulating interlayer layer is formed on the semiconductor substrate by depositing an insulator of which having the heat expansion coefficient and lattice mismatch that are less than those of the semiconductor substrateto cover the field oxide layer and the gate, forming a .