Abstract: An input device includes a control surface for a color correction system. The control surface includes a housing with an upwardly facing control panel. The control panel has a proximal edge which is nearest a user and a distal edge that is furthest from a user in normal use. The control panel includes a plurality of controls. The plurality of controls includes: a plurality of trackballs, wherein each trackball comprises a ball and a control ring, said ball cooperating with at least one encoder to generate a multi-dimensional control signal based on motion of the ball, and said control ring cooperating with at least one encoder to generate a one dimensional control signal based on the rotational motion of the ring, wherein the ball of said trackball is mounted concentrically with said control ring; a plurality of control buttons; and a plurality of knobs coupled to respective rotary encoders.

Abstract: A method and system comprising; a physical medium having a first unique identifier and a second unique identifier stored within; where said physical medium is in communication with a first distributed ledger having said first unique identifier associated with said second unique identifier stored within; where said distributed ledger is operatively connected with a first comparison algorithm providing; physical authentication of data associated with additional data elements; further provides mathematical coupling to further additional data which allows for novel visibility and management, including reducing inefficiencies and errors, within physical systems, for example product supply chains, without the need to fully replace current supply chain management systems.

Abstract: Some examples described herein provide for a shield in an integrated circuit (IC) structure for memory protection. In an example, an IC structure includes a semiconductor material, an interconnect structure, and a shield. The semiconductor material has a protected region. Devices are disposed in a first side of the semiconductor material in the protected region. The interconnect structure is disposed on the first side of the semiconductor material. The interconnect structure interconnects the devices in the protected region. The shield is disposed on a second side of the semiconductor material opposite from the first side of the semiconductor material. The shield is positioned aligned with the protected region.

Abstract: Examples described herein generally relate to devices that include electrostatic discharge (ESD) protection in a chip stack. In an example, a device includes a chip stack including first and second chips, ground and power supply voltage nodes, and first and second resistor-capacitor (RC) clamps. The second chip is disposed on and attached to the first chip. The ground and power supply voltage nodes are connected between and extend in the first and second chips, and are connected to the ground and power supply voltage exterior connector pads, respectively, of the first chip. The first and second RC clamps are disposed in the first and second chips, respectively. The first and second RC clamps are connected to and between the ground node and the power supply voltage node. An RC-time constant of the second RC clamp is less than an RC-time constant of the first RC clamp.

Abstract: The present discloses a method and system for extracting and recovering selective bioactive components from Mitragyna speciosa plant biomass with carbon dioxide comprising one or more solutes in supercritical and/or subcritical state. The method and system disclosed herein comprise the steps; (i) contacting said Mitragyna speciosa plant biomass with carbon dioxide comprising one or more solutes in supercritical and/or subcritical state. (ii) further separating solution comprising said carbon dioxide, said solute(s) and said bioactive components from said plant biomass, (iii) further transitioning said solution comprising said carbon dioxide, said solute(s)s, and said bioactive components to solid phase, (iv) further removal of said carbon dioxide, and/or said solute(s) via sublimation and recovering said selective fraction of bioactive components consisting essentially of mitragyinien, paynanthine, speciogynine, and/or 7-Hydroxymitragynine.

Abstract: Examples described herein provide a circuit and methods for self-testing to detect damage to a device, which damage may be caused by an Electro-Static Discharge (ESD) event. In an example, an integrated circuit includes an input/output circuit, an ESD protection circuit, and a system monitor. The input/output circuit has an input/output node. The ESD protection circuit is connected to the input/output node. The system monitor has a driving/measurement node selectively connectable to the input/output node. The system monitor is configured to drive and measure a voltage of the driving/measurement node. The system monitor is further configured to determine, based on driving and measuring the voltage of the driving/measurement node, whether a damaged device is present. The damaged device is in the input/output circuit or the ESD protection circuit.

Abstract: Disclosed herein are integrated circuit devices and methods for fabricating the same that include at least one non-I/O die having ESD protection circuitry. The ESD protection circuitry disclosed herein may also be utilized in I/O dies. In one example, an integrated circuit device includes a die having a first body. First and second contact pads are exposed to a surface of the first body. The first contact pad is configured to connect to a first supply voltage. The second contact pad is configured to connect to a second supply voltage or ground. A first charge-sensitive circuitry formed in the first body is coupled between the first and second contact pads. A first RC clamp formed in the first body is coupled between the first and second contact pads. The first RC clamp includes at least two BigFETs coupled between the first and second contact pads, and a trigger circuitry coupled in parallel to gate terminals of the at least two BigFETs.

Abstract: Techniques for electrostatic discharge (ESD) protection in integrated circuit (IC) chip packages methods for testing the same are described that are configured to directs the risk of ESD events through ground and power interconnects preferentially over I/O interconnects to enhance ESD protection in chip packages. In one example, a chip package is provided that includes an IC die, a substrate, and a plurality of interconnects. The plurality of interconnects are exposed on a side of the substrate opposite the IC die. The interconnects provide terminations for substrate circuitry formed within the substrate. At least one of the last 5 interconnects of the plurality of interconnects respectively comprising rows and columns of interconnects disposed along the edges of the substrate that closest to each corner of substrate project farther from the substrate than interconnects within those rows and columns that are configured as I/O interconnects.

Abstract: An electronics-harmful-radiation (EHR) monitoring system includes an EHR measurement circuit. The EHR measurement circuit includes a first device, a single event upset (SEU) detector circuit configured to determine a first number of SEUs of the first device during a first period, and an EHR measurement generator configured to generate a first EHR value based on the first number of SEUs and the first period.

Abstract: A method and system comprising; a physical medium having a first unique identifier and a second unique identifier stored within; where said physical medium is in communication with a first distributed ledger having said first unique identifier associated with said second unique identifier stored within; where said distributed ledger is operatively connected with a first comparison algorithm providing; physical authentication of data associated with additional data elements; further provides mathematical coupling to further additional data which allows for novel visibility and management, including reducing inefficiencies and errors, within physical systems, for example product supply chains, without the need to fully replace current supply chain management systems.

Abstract: Examples described herein provide for single event latch-up (SEL) mitigation techniques. In an example, a circuit includes a semiconductor substrate, a first transistor, a second transistor, and a ballast resistor. The semiconductor substrate comprises a p-doped region and an n-doped region. The first transistor comprises an n+ doped source region disposed in the p-doped region of the semiconductor substrate. The second transistor comprises a p+ doped source region disposed in the n-doped region of the semiconductor substrate. The p+ doped source region, the n-doped region, the p-doped region, and the n+ doped source region form a PNPN structure. The ballast resistor is electrically connected in series with the PNPN structure between a power node and a ground node.

Abstract: Disclosed herein are integrated circuit devices and and methods for fabricating the same that include at least one non-I/O die having ESD protection circuitry. The ESD protection circuitry disclosed herein may also be utilized in I/O dies. In one example, an integrated circuit device includes a die having a first body. First and second contact pads are exposed to a surface of the first body. The first contact pad is configured to connect to a first supply voltage. The second contact pad is configured to connect to a second supply voltage or ground. A first charge-sensitive circuitry formed in the first body is coupled between the first and second contact pads. A first RC clamp formed in the first body is coupled between the first and second contact pads. The first RC clamp includes at least two BigFETs coupled between the first and second contact pads, and a trigger circuitry coupled in parallel to gate terminals of the at least two BigFETs.

Abstract: Examples described herein provide for single event latch-up (SEL) mitigation techniques. In an example, a semiconductor structure includes a semiconductor substrate, a p-type transistor having p+ source/drain regions disposed in a n-doped region in the semiconductor substrate, an n-type transistor having n+ source/drain regions disposed in a p-doped region in the semiconductor substrate, a n+ guard ring disposed in the n-doped region and laterally around the p+ source/drain regions of the p-type transistor, and a p+ guard ring disposed laterally around the n-doped region. The p+ guard ring is disposed between the p-type transistor and the n-type transistor.

Abstract: FinFET, P-N junctions and methods for forming the same are described herein. In one example, a FinFET is described that includes a fin having a channel region wrapped by a gate, the channel region connecting a source and a drain. A first isolation layer is disposed on a first side of the fin and a second isolation layer is disposed on a second side of the fin, where the second side is opposite of the first side. The second isolation layer has a thickness greater than a thickness of the first isolation layer.

Abstract: Examples described herein provide for single event latch-up (SEL) mitigation techniques. In an example, a semiconductor structure includes a semiconductor substrate, a p-type transistor having p+ source/drain regions disposed in a n-doped region in the semiconductor substrate, an n-type transistor having n+ source/drain regions disposed in a p-doped region in the semiconductor substrate, a n+ guard ring disposed in the n-doped region and laterally around the p+ source/drain regions of the p-type transistor, and a p+ guard ring disposed laterally around the n-doped region. The p+ guard ring is disposed between the p-type transistor and the n-type transistor.

Abstract: Examples described herein provide for single event latch-up (SEL) mitigation techniques. In an example, a circuit includes a semiconductor substrate, a first transistor, a second transistor, and a ballast resistor. The semiconductor substrate comprises a p-doped region and an n-doped region. The first transistor comprises an n+ doped source region disposed in the p-doped region of the semiconductor substrate. The second transistor comprises a p+ doped source region disposed in the n-doped region of the semiconductor substrate. The p+ doped source region, the n-doped region, the p-doped region, and the n+ doped source region form a PNPN structure. The ballast resistor is electrically connected in series with the PNPN structure between a power node and a ground node.

Abstract: An integrated circuit device is described. The integrated circuit device comprises a substrate having transmitter for receiving a signal to be transmitted to a receiver of the substrate by way of a transmission channel; a first plurality of contacts adapted to receive a first integrated circuit die, wherein a contact of the first plurality of contacts is adapted to receive the signal to be transmitted by the transmitter; a second plurality of contacts adapted to receive a second integrated circuit die, wherein a contact of the second plurality of contacts is adapted to receive the signal transmitted by the transmitter and received by the receiver; a first resistive element coupled between a contact of the first plurality of contacts and the transmitter; and a second resistive element coupled between a contact of the second plurality of contacts and the receiver. A method of transmitting data in an integrated circuit is also described.

Abstract: An example integrated circuit (IC) assembly includes: a substrate, and a first IC die stacked on a second IC die, a stack of the first IC die and the second IC die mounted to the substrate. The first IC die includes an active side, a backside, a plurality of through-silicon vias (TSVs) exposed on the backside, an electrostatic discharge (ESD) circuit on the active side, and metallization on the active side. The metallization includes a first plurality of metal layers disposed on the active side and a second plurality of metal layers disposed on the first plurality of metal layers, each of the second plurality of metal layers thicker than each of the first plurality of metal layers. The metallization further includes a U-route that electrically couples a first TSV of the plurality of TSVs to the ESD circuit, the U-route including a conductive path through the second plurality of metal layers.

Abstract: FinFET, P-N junctions and methods for forming the same are described herein. In one example, a FinFET transistor is described that includes a fin having a channel region wrapped by a gate, the channel region connecting a source and a drain. A first isolation layer is disposed on a first side of the in and a second isolation layer is disposed on a second side of the fin, where the second side is opposite of the first side. The second oxide isolation layer has a thickness greater than a thickness of the first isolation layer.

Abstract: A method of digitizing an audio track carried on an elongate recording medium, such as a movie film, includes transporting the recording medium containing the audio track past a reader to enable sequential reading of the audio track. The reading of the audio track generates an analog output signal. The method also includes sensing a rate of transportation of the recording medium, and sampling the analog output signal at a sampling rate determined on the basis of the sensed rate of transportation to digitize the analog output signal. A system for digitizing audio is also disclosed.