Patents by Inventor James Karp

James Karp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory array using gate breakdown structure in standard sub 0.35 micron CMOS process
    Patent number: 6044012
    Abstract: A non-volatile memory cell is provided that includes a low voltage CMOS storage transistor having a source region and a drain region that are commonly connected to ground. The low voltage storage transistor is programmed by applying a high programming voltage to its gate, thereby rupturing the gate oxide of the storage transistor. The high programming voltage is applied to the low voltage storage transistor through a high voltage p-channel transistor. The high voltage p-channel transistor has a thicker gate oxide than the storage transistor, thereby enabling the p-channel transistor to withstand higher voltages. The high voltage p-channel transistor also has a higher breakdown voltage than a high voltage n-channel transistor of the same size. Both the low voltage storage transistor and the high voltage p-channel transistor are fabricated in accordance with a standard sub 0.35 micron process.
    Type: Grant
    Filed: March 5, 1999
    Date of Patent: March 28, 2000
    Assignee: Xilinx, Inc.
    Inventors: Kameswara K. Rao, Martin L. Voogel, Shahin Toutounchi, James Karp