Abstract: An optical device packaging technique involves an optical sensor that is formed on a first substrate and flip chip bonded to a second substrate. The second substrate includes a through hole or a transparent section that is aligned with the optical sensor in order to allow light to contact the optical sensor. An embodiment of an optical device structure includes an optical sensor, a first substrate, a second substrate, and a circuit board. The optical sensor is formed on or within the first substrate and the individual sensors or pixels of the optical sensor are electrically connected to contact pads that are exposed on the first substrate. The first substrate is flip chip bonded to the second substrate. The second substrate is flip chip bonded to a circuit board. Another embodiment of an optical device structure includes an optical sensor, a first substrate, and a circuit board as the second substrate.

Abstract: A system and method for providing a constant electric field that is insensitive to fluctuations in the power supply to a FLASH EPROM during erasure. The system comprises a plurality of sector source drivers and a power supply insensitive constant current source. Each sector has at least one binary storage element. Each storage element has a source. The sector source drivers couple the at least one source of a sector to be erased to the power supply insensitive constant current source. The power supply insensitive constant current source provides an electric field across the tunneling oxide which is constant and insensitive to fluctuations in the power supply. This improves the wear characteristics and lifetime of the binary storage elements. In addition, this system remedies problems associated with short channel effects, electron trapping, and the use of various voltage sources.

Abstract: An output buffer circuit is disclosed that operates in low voltage applications but can be programmed using standard programmers at high voltage. The output buffer circuit provides for detecting a program verify logic signal from the programmer and slowing the output driver transistors when that signal is detected. In so doing, the noise problems associated with the higher voltages of programming a EPROM device are eliminated while at the same time allowing the output buffer circuit to operate at the required performance levels during normal operation.

Abstract: A distributed VCC/VSS clamp structure (10) for preventing inadvertent damage to semiconductor integrated circuits caused by an electrostatic discharging event occurring between any two external pins thereof includes a clamp transistor (Q4) which is disposed locally to every ESD protection circuitry associated with each input and output pin of a semiconductor integrated circuit. The clamp transistor is activated so as to provide a secondary discharging path when the direct clamp discharging paths of the ESD protection circuitry are not forming a complete path.

Abstract: A system for allowing a content addressable memory (CAM) to operate with first and second power voltage levels including: a first input voltage for providing a first bias to the content addressable memory; a second input voltage for providing a second bias to the content addressable memory; and a selection device coupled to the first input voltage and the second input voltage for decoupling the first input voltage from the content addressable memory and coupling the second input voltage to the content addressable memory in response to coupling the second power voltage level to the content addressable memory.

Abstract: A convertible gymnastic apparatus for doing push-lift movement or chest building movement makes use of a short cross bar having thereon a protruded bar extending upwardly and a swing frame comprising a longitudinal bar, to which a movable body is attached, and two gyrating arms having a baffle disposed at inner side end thereof. As movable body is moved upwardly, the movement of the baffle of gyrating arm is obstructed by the bump of the movable body so that the gyrating arm can not be rotated. Therefore, the user can do the push-lift movement. As movable body is moved downwardly, the protruded bar of the short cross bar is locked securely into the hole of the movable body, thereby resulting in prevention of the swing frame from swinging forward and allowing the user to do the chest building movement.

Abstract: An apparatus for storing data for read and write access receiving reset control signals, comprising a plurality of storage blocks, each block including an array of memory units for storing a unit of data is provided that is reset along storage block boundaries. A reset control means, coupled to receive the reset control signals which identify at least one of the storage blocks, is included for generating block reset signals. A means, coupled to the memory units in each storage block and to receive the block reset signals, for resetting the identified block of memory to 0. .

Abstract: A memory comprising apparatus for selecting redundant rows of memory cells wherein the addressing of a defective regular row of memory cells coupled to a first set of bit lines results in the selection of a redundant row of memory cells coupled to a second set of bit lines such that signal interference resulting from the simultaneous enablement of two word lines in the memory is avoided.

Abstract: The substrate active region contains the source and drain regions for the transistors in each cell. The grounded drains of the two pulldown transistors extend symmetrically into the three adjacent cells coupling with six other pulldown drains. This common ground node has a single upward contact to the metal ground lead. The poly-2 has a similar voltage node coupling eight pulldown resistors in four adjacent cells to the metal Vdd lead. The poly-2 forming the lightly doped resistor area has a heavily doped conductive area at each end for coupling the resistor into the pulldown circuit. The pulldown gate bands have 45 degree bends to maximize the gate area relative to the pass gate area. The gate bends cooperate with corresponding 45 degree slants in the edges of the active region to minimize the effect of misalignment. A conductive poly word line forms the pass gates just above the active region.