Abstract: One exemplary disclosed embodiment comprises a two-terminal stacked-die package including a diode, such as a silicon diode, stacked atop a III-nitride transistor, such that a cathode of the diode resides on and is electrically coupled to a source of the III-nitride transistor. A first terminal of the package is coupled to a drain of the III-nitride transistor, and a second terminal of the package is coupled to an anode of the diode. In this manner, devices such as cascoded rectifiers may be packaged in a stacked-die form, resulting in reduced parasitic inductance and resistance, improved thermal dissipation, smaller form factor, and lower manufacturing cost compared to conventional packages.

Abstract: The high side or low side FET of a buck converter, or both, are replaced by plural parallel devices of different threshold voltage and are turned on and off in a sequence which offers the best turn on and turn off characteristics related to high and low threshold voltages. The parallel devices can have the same or different active areas.

Abstract: An integrated circuit that includes a power stage and a driver stage, all stages using III-nitride power devices.

Abstract: A power converter driver that is supplied with two different voltages.

Abstract: Novel fenicol compounds having useful properties as antibiotic prodrugs, are provided, together with methods of making and using these new compounds.

Abstract: A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally OFF) FET device for switching power applications. The main switching device comprises a depletion mode GaN-based HEMT (High Electron Mobility Transistor) FET that does not include an intrinsic body diode. In one or more embodiments, the higher speed switching device comprises a high speed FET semiconductor switch arranged or connected in parallel with a Schottky diode. The high speed FET semiconductor switch may comprise a Si FET, GaN FET or any other type of FET which possesses higher speed switching capabilities and a lower voltage than that of the GaN-based HEMT FET. In some embodiments, the GaN-based HEMT FET and the higher speed switching device (i.e., the FET and Schottky diode) may be monolithically integrated on the same substrate.

Abstract: A circuit comprising a gate driver including first and second switching stages for driving respective sync and control switches, at least one of which is a normally ON depletion mode device, and another circuit connected to the first and second switching stages and including first and second circuits. The first circuit is coupled to the first switching stage and to the sync switch, the first switching stage having a first state wherein the sync switch is on, and a second state wherein a first bias voltage is switched to the gate of the sync switch to turn it off. The second circuit has a first state wherein the control switch is on when the sync switch is off, and a second state wherein the control switch is switched off when the sync switch is on by switching a second bias voltage to the gate of the control switch.

Abstract: Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching device fabricated on a substrate comprising a high threshold GaN transistor coupled across a low threshold GaN transistor, wherein a gate and a source of the low threshold GaN transistor are shorted with an interconnect metal to function as a parallel diode in a reverse mode. The high threshold GaN transistor is configured to provide noise immunity for the GaN switching device when in a forward mode. The high threshold GaN transistor and the low threshold GaN transistor are typically fabricated on the same substrate, and with significantly different thresholds. As a result, the superior switching characteristics of III-nitride devices may be leveraged while retaining the functionality and the monolithic structure of the inherent body diode in traditional silicon FETs.

Abstract: A power converter driver that is supplied with two different voltages.

Abstract: One disclosed embodiment is a power conversion circuit including a power conversion bridge between a bus voltage and ground, including a switched node for supplying current to an output circuit. A driver section is configured to drive the power conversion bridge that includes a first section and a second section, the first section being between a negative supply voltage and ground, and the second section being between the switched node and a derived voltage below the switched node, the derived voltage being derived from the negative voltage. In one embodiment, the power conversion bridge includes a high side III-nitride switch and a low side III-nitride switch connected with the high side III-nitride switch to from a half-bridge. In one embodiment, the high side and low side III-nitride switches are depletion mode devices.

Abstract: Lithium ion batteries having an anode comprising at least one graphene layer in electrical communication with titania to form a nanocomposite material, a cathode comprising a lithium olivine structure, and an electrolyte. The graphene layer has a carbon to oxygen ratio of between 15 to 1 and 500 to 1 and a surface area of between 400 and 2630 m2/g. The nanocomposite material has a specific capacity at least twice that of a titania material without graphene material at a charge/discharge rate greater than about 10 C. The olivine structure of the cathode of the lithium ion battery of the present invention is LiMPO4 where M is selected from the group consisting of Fe, Mn, Co, Ni and combinations thereof.

Abstract: Disclosed is a buck converter for converting a high voltage at the input of the buck converter to a low voltage at the output of the buck converter. The buck converter includes a control circuitry configured to control a duty cycle of a control switch, the control switch being interposed between the input and the output of the buck converter. A synchronous switch is interposed between the output and ground. The control switch and the synchronous switch comprise depletion-mode III-nitride transistors. In one embodiment, at least one of the control switch and the synchronous switches comprises a depletion-mode GaN HEMT. The buck converter further includes protection circuitry configured to disable current conduction through the control switch while the control circuitry is not powered up.

Abstract: A circuit for driving a switching stage including control and sync switches series connected at a switching node, at least one of the control and sync switches being a normal ON depletion mode device, the circuit comprising a gate driver including first and second switching stages for generating gate drive signals for the sync and control switches, respectively, the first switching stage having a first driver output node and the second switching stage having a second driver output node, a signal from the first node driving the sync switch and a signal from the second node driving the control switch and a circuit connected to the first and second switching stages, the circuit including a first circuit providing a first voltage source, the first circuit being coupled to the first switching stage and to the sync switch, a first bias voltage from the first voltage source being switched by the first switching stage, the first switching stage having a first state wherein the sync switch is on, and a second state wh

Abstract: A buck converter circuit is disclosed in which one or both of the control switch and the synchronous switch are III-nitride-based depletion mode. An enhancement mode switch is connected with one or both of the III-nitride based switches and operated to prevent conduction of current by the III-nitride based switch until all biases are established for proper operation.

Abstract: A circuit comprising a gate driver including first and second switching stages for driving respective sync and control switches, at least one of which is a normally ON depletion mode device, and another circuit connected to the first and second switching stages and including first and second circuits. The first circuit is coupled to the first switching stage and to the sync switch, the first switching stage having a first state wherein the sync switch is on, and a second state wherein a first bias voltage is switched to the gate of the sync switch to turn it off. The second circuit has a first state wherein the control switch is on when the sync switch is off, and a second state wherein the control switch is switched off when the sync switch is on by switching a second bias voltage to the gate of the control switch.

Abstract: A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally OFF) FET device for switching power applications. The main switching device comprises a depletion mode GaN-based HEMT (High Electron Mobility Transistor) FET that does not include an intrinsic body diode. In one or more embodiments, the higher speed switching device comprises a high speed FET semiconductor switch arranged or connected in parallel with a Schottky diode. The high speed FET semiconductor switch may comprise a Si FET, GaN FET or any other type of FET which possesses higher speed switching capabilities and a lower voltage than that of the GaN-based HEMT FET. In some embodiments, the GaN-based HEMT FET and the higher speed switching device (i.e., the FET and Schottky diode) may be monolithically integrated on the same substrate.

Abstract: A circuit for reducing switching losses in a synchronous rectifier of a switching stage including a high-side control transistor and a low-side synchronous transistor coupled at a switching node, the switching stage receiving an input voltage and providing a controlled output voltage at an output node. The circuit including a first circuit portion for sensing waveshape edges of a first signal at a gate terminal of the low-side synchronous transistor and a first voltage to determine a delay between the waveshape edge of the first signal and the waveshape edge of the first voltage; and a second circuit portion for calibrating the first signal and the first voltage to align the waveshape edge of the first signal and the waveshape edge of the first voltage, with an optional offset to achieve minimal power loss.

Abstract: According to one exemplary embodiment, an efficient and high speed E-mode III-N/Schottky switch includes a silicon transistor coupled with a D-mode III-nitride device, where the silicon transistor causes the D-mode III-nitride device to operate in an enhancement mode. The E-mode III-N/Schottky switch further includes a Schottky diode coupled across the silicon transistor so as to improve efficiency, recovery time, and speed of the E-mode III-N/Schottky switch. An anode of the Schottky diode can be coupled to a source of the silicon transistor and a cathode of the Schottky diode can be coupled to a drain of the silicon transistor. The Schottky diode can be integrated with the silicon transistor. In one embodiment the III-nitride device is a GaN device.

Abstract: A power control system and method including a plurality of point-of-load regulators (POL) providing corresponding regulated output voltages; a manager for communicating control signals and operational parameters with said point-of load regulators; a digital bus to carry control signals therebetween; and an analog bus to carry operational parameters therebetween. Analog sensing circuits and a mutliplexer on the POL communicate operational parameters to and from the manager via the analog bus and are controlled via the digital bus. The operational parameters include output voltage, output current, over voltage, temperature, amplifier or comparator offset, and amplifier gain. The analog sensing circuits are calibrated by trim registers on the POL under digital control by the manager.