Abstract: The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

Abstract: Provided are a solar cell a solar cell having high light absorbance and power conversion efficiency and a method for producing the solar cell. The solar cell includes a substrate, a first electrode disposed on the substrate, a photoactive layer disposed on the first electrode, and a second electrode disposed on the photoactive layer. The photoactive layer includes an electron acceptor and at least two electron donors.

Abstract: Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.

Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.

Abstract: An image sensor and an operating method thereof are disclosed. The image sensor includes a first photoelectric conversion portion configured to receive plural lights, except for a light of first wavelength, to generate an electric charge; and a second photoelectric conversion portion configured to receive the light of the first wavelength to generate an electric charge, wherein at least a portion of the first photoelectric conversion portion and the second photoelectric conversion portion is spaced apart from each other in a vertical direction.

Abstract: Disclosed are a polishing slurry used in a polishing process of tungsten and a method of polishing using the same. The slurry includes an abrasive for performing polishing and an oxidation promoting agent for promoting the formation of an oxide. The abrasive includes titanium oxide particles.

Abstract: Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage region disposed on a partial region of the insulating layer, a channel region disposed on the storage region to provide a valence band energy offset between the channel region and the storage region, a gate insulating layer and a gate electrode sequentially disposed on the channel region, and source and drain regions connected to the channel region and disposed at both sides of the gate electrode. A storage region having different valence band energy from a channel region is disposed under the channel region unit so that charges trapped in the storage region unit cannot be easily drained. Thus, a charge retention time may be increased to improve data storage capability.

Abstract: Disclosed are a benzobis(thiadiazole)-based alternating copolymer, a method for preparing the same, and an organic electronic device including the same. The present disclosure provides a benzobis(thiadiazole)-based alternating copolymer represented by the chemical formula 1: wherein R1, R2 or R3 is hydrogen or C1-C20 linear, branched or cyclic alkyl, X is S, O, NR4, PR5, or HC?CH, wherein R4 or R5 is C1-C20 linear, branched or cyclic alkyl, Y is C, Si or N (in this case only one of R2 and R3 exists), and m is an integer from 1 to 3.

Abstract: The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: Disclosed are a benzobis(thiadiazole)-based alternating copolymer, a method for preparing the same, and an organic electronic device including the same. The present disclosure provides a benzobis(thiadiazole)-based alternating copolymer represented by the chemical formula 1: wherein R1, R2 or R3 is hydrogen or C1-C20 linear, branched or cyclic alkyl, X is S, O, NR4, PR5, or HC?CH, wherein R4 or R5 is C1-C20 linear, branched or cyclic alkyl, Y is C, Si or N (in this case only one of R2 and R3 exists), and m is an integer from 1 to 3.

Abstract: Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer. The charge trapping layer comprise a nanocrystal layer intervened in an organic layer, and the nanocrystal layer comprises a plurality of nanocrystals.

Abstract: A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. The unit cell receives a plurality of voltage ranges to perform a plurality of operations. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range.

Abstract: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent.

Abstract: Provided are a solar cell a solar cell having high light absorbance and power conversion efficiency and a method for producing the solar cell. The solar cell includes a substrate, a first electrode disposed on the substrate, a photoactive layer disposed on the first electrode, and a second electrode disposed on the photoactive layer. The photoactive layer includes an electron acceptor and at least two electron donors.

Abstract: Disclosed is a double-sided light-collecting organic solar cell. The double-sided light-collecting organic solar cell comprises: a first light-transmitting electrode; a first photoactive layer disposed on the first light-transmitting electrode; a reflective electrode disposed on the first photoactive layer; a second photoactive layer disposed on the reflective electrode; and a second light-transmitting electrode disposed on the second photoactive layer. According to the present invention, photoactive layers are formed on both sides of a reflective electrode in the middle, and light-transmitting electrodes are formed to enable light to be absorbed at both sides of a cell, to increase the light absorption of the cell and enable the production of a highly efficient organic solar cell.

Abstract: The present invention provides a solar cell and manufacturing method thereof. The solar cell according to the present invention comprises: first and second electrodes, at least one of which has light transmitting properties; two or more photoelectric conversion layers positioned between the first and second electrodes; and a transflective conductive layer positioned between the photoelectric conversion layers. Further, tunneling layers are also provided between the photoelectric conversion layers and the transflective conductive layer. The efficiency of the solar cell can be improved, as compared with the prior art, by providing tunneling layers and a transflective conductive layer in this way.

Abstract: A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

Abstract: A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.