Patents by Inventor Jea-gun Park
Jea-gun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968874Abstract: An organic light-emitting display device includes quantum dots and an RGB color filter layer having quantum dots and thus is capable of removing 100% of interference among red, green, and blue color filters.Type: GrantFiled: May 26, 2020Date of Patent: April 23, 2024Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Jea Gun Park, Seung Jae Lee, Ji Eun Lee, Seo Yun Kim
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Patent number: 11968915Abstract: A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.Type: GrantFiled: September 21, 2021Date of Patent: April 23, 2024Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun Park, Soo Min Jin, Dong Won Kim, Hea Jee Kim, Dae Seong Woo, Sang Hong Park, Sung Mok Jung, Dong Eon Kim
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Patent number: 11932794Abstract: Disclosed are quantum dots based on a graded multishell structure and a method of manufacturing the same. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core, inter shells surrounding the core, and an outer shell surrounding the inter shells, wherein the concentrations of compounds composing the inter shells are changed stepwise from the core to the outer shell.Type: GrantFiled: May 22, 2020Date of Patent: March 19, 2024Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITYInventors: Jea Gun Park, Seung Jae Lee, Ji Eun Lee, Chang Jin Lee
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Patent number: 11827825Abstract: Disclosed are quantum dots including a luminescent dopant. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core and a shell surrounding the core, wherein at least one of an interior of the core and an interface between the core and the shell is doped with a luminescent group I dopant.Type: GrantFiled: May 22, 2020Date of Patent: November 28, 2023Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun Park, Seung Jae Lee, Ji Eun Lee, Chang Jin Lee
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Publication number: 20230240094Abstract: Embodiments provide a slurry for polishing copper, a manufacturing method of a display device which uses the slurry, and the display device. The slurry for polishing copper includes an abrasive, a catalyst including a single molecule having an iron ion, a polishing suppressant, and an oxidizing agent.Type: ApplicationFiled: January 20, 2023Publication date: July 27, 2023Applicants: Samsung Display Co., LTD., IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Byoung Kwon CHOO, Jea Gun PARK, Seung Bae KANG, Sungjun KIM, Sung Hoon MOON
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Publication number: 20230106112Abstract: Disclosed are quantum dots based on a graded multishell structure and a method of manufacturing the same. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core, inter shells surrounding the core, and an outer shell surrounding the inter shells, wherein the concentrations of compounds composing the inter shells are changed stepwise from the core to the outer shell.Type: ApplicationFiled: May 22, 2020Publication date: April 6, 2023Inventors: Jea Gun PARK, Seung Jae LEE, Ji Eun LEE, Chang Jin LEE
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Publication number: 20230098866Abstract: Disclosed are quantum dots including a luminescent dopant. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core and a shell surrounding the core, wherein at least one of an interior of the core and an interface between the core and the shell is doped with a luminescent group I dopant.Type: ApplicationFiled: May 22, 2020Publication date: March 30, 2023Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun PARK, Seung Jae LEE, Ji Eun LEE, Chang Jin LEE
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Publication number: 20230011421Abstract: A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.Type: ApplicationFiled: September 21, 2021Publication date: January 12, 2023Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun PARK, Soo Min JIN, Dong Won KIM, Hea Jee KIM, Dae Seong WOO, Sang Hong PARK, Sung Mok JUNG, Dong Eon KIM
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Patent number: 11404458Abstract: The present invention discloses an image sensor including a quantum dot layer. The image sensor including a quantum dot layer according to the present invention includes photoelectric conversion elements formed on a substrate to correspond to a plurality of pixel regions; a wiring layer formed on the substrate on which the photoelectric conversion elements are formed; color filters formed on the wiring layer to correspond to the photoelectric conversion elements; and a quantum dot layer formed on the color filters and absorbing light and emitting visible light having a specific range of wavelengths converted from the absorbed light.Type: GrantFiled: April 20, 2018Date of Patent: August 2, 2022Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Il Hwan Kim, Jun Seong Park, Yun Hyuk Koh
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Publication number: 20220149200Abstract: Disclosed are a neuron and a neuromorphic system including the same. More particularly, a neuron according to an embodiment of the present invention includes a completely depleted Silicon-On-Insulator (SOI) device whose a depletion region is controlled according to an inputted electrical signal to perform integration and leakage.Type: ApplicationFiled: November 6, 2019Publication date: May 12, 2022Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun PARK, Dong Won KIM
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Publication number: 20220115228Abstract: The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.Type: ApplicationFiled: September 30, 2019Publication date: April 14, 2022Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Jea Gun PARK, Tae Hun SHIM, Jae Hyoung SHIM, Jin Seong PARK, Jae Un LEE
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Patent number: 11296276Abstract: Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.Type: GrantFiled: November 19, 2019Date of Patent: April 5, 2022Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Jong Ung Baek, Kei Ashiba, Jin Young Choi, Mi Ri Park, Hyun Gyu Lee, Han Sol Jun, Sun Hwa Jung
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Publication number: 20220085104Abstract: The present invention discloses a selection device and a memory device including the same. The selection device according to an embodiment of the present invention has high reliability and a high selection ratio. Accordingly, when the selection device is used, a highly integrated memory cell capable of selecting a desired cell without leakage current may be provided.Type: ApplicationFiled: November 7, 2019Publication date: March 17, 2022Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventor: Jea Gun PARK
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Publication number: 20220076108Abstract: The present invention discloses a neuron and a neuromorphic system including the same. The neuron according to an embodiment of the present invention includes a two-terminal spin device for performing integration and fire, and the two-terminal spin device is formed to have a negative differential resistance (NDR) region in which current decreases as voltage increases.Type: ApplicationFiled: November 7, 2019Publication date: March 10, 2022Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Jea Gun PARK, Jong Ung BAEK
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Publication number: 20220058473Abstract: The present invention discloses a neuron and a neuromorphic system including the same. The neuron according to an embodiment of the present invention includes a metal insulator metal (MIM) device including a metal ion-doped insulating layer and configured to perform integration and fire, and the MIM device is formed to have a negative differential resistance (NDR) region in which current decreases as voltage increases.Type: ApplicationFiled: November 7, 2019Publication date: February 24, 2022Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Jea Gun PARK, Dong Won KIM
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Patent number: 11258935Abstract: The present invention discloses a dual image sensor. The dual image sensor according to one embodiment of the present invention includes first and second image sensor modules mounted on a printed circuit board, wherein the first image sensor module includes a first housing mounted on the printed circuit board; a first image sensor mounted on the printed circuit board and formed on a first surface of the first housing; and a first lens formed on a second surface of the first housing, and the second image sensor module includes a second housing mounted on the printed circuit board; a second image sensor mounted on the printed circuit board and formed on a first surface of the second housing; a second lens formed on a second surface of the second housing; and a quantum dot layer formed between the second image sensor and the second lens and absorbing ultraviolet light and emitting visible light converted from the absorbed ultraviolet light.Type: GrantFiled: April 20, 2018Date of Patent: February 22, 2022Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Il Hwan Kim, Jun Seong Park, Ji Ho Choi
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Publication number: 20220013714Abstract: Disclosed is a memory device including a lower electrode, a seed layer, a synthetic antiferromagnetic layer, a magnetic tunnel junction, and an upper electrode laminated on a substrate, wherein the magnetic tunnel junction includes a pinned layer, a tunnel barrier layer, and free layers, wherein the free layers include a first free layer, a spacer layer, a coupling layer, a buffer layer, and a second free layer laminated in sequential order.Type: ApplicationFiled: October 24, 2019Publication date: January 13, 2022Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Jea Gun PARK, Jong Ung BAEK
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Publication number: 20210408418Abstract: An organic light-emitting display device includes quantum dots and an RGB color filter layer having quantum dots and thus is capable of removing 100% of interference among red, green, and blue color filters.Type: ApplicationFiled: May 26, 2020Publication date: December 30, 2021Inventors: Jea Gun PARK, Seung Jae LEE, Ji Eun LEE, Seo Yun KIM
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Patent number: 11133458Abstract: Disclosed is a memory device. A memory device according to an embodiment of the present invention includes a memory device including a substrate; and a lower electrode, seed layer, lower synthetic antiferromagnetic layer, magnetic tunnel junction, upper synthetic antiferromagnetic layer, and upper electrode that are laminated on the substrate, wherein the magnetic tunnel junction includes a lower pinned layer, lower tunnel barrier layer, lower free layer, separation layer, upper free layer, upper tunnel barrier layer and upper pinned layer that are sequentially laminated.Type: GrantFiled: January 4, 2019Date of Patent: September 28, 2021Assignee: Industry-University Cooperation Foundation Hanyang UniversityInventors: Jea Gun Park, Jin Young Choi, Han Sol Jun, Dong Gi Lee, Kondo Kei, Jong Ung Baek
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Patent number: 11093824Abstract: The present disclosure provides a neuromorphic device and a method of driving the same. The neuromorphic device of the present disclosure includes a channel, the magnetization direction of which is changed as a plurality of data is integrated, first and second magnetization regulators formed on both ends of the channel and responsible for changing the magnetization direction of the channel according to a plurality of input data, and a controller formed on the channel between the first and second magnetization regulators and responsible for firing data equal to or greater than a critical value integrated in the channel.Type: GrantFiled: September 1, 2017Date of Patent: August 17, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jea Gun Park, Du Yeong Lee, Seung Eun Lee