Abstract: Operating speeds of integrated circuit devices are tested to establish maximum and minimum frequency at maximum and minimum voltage. The devices are sorted into relatively-slow and relatively-fast devices to classify the devices into different voltage bins. A bin-specific voltage limit is established for each of the voltage bins needed for core performance at system use conditions. The bin-specific voltage limit is compared to core minimum chip-level functionality voltage at system maximum and minimum frequency specifications. The method correlates system design evaluation of design maximum and minimum frequency at design maximum and minimum voltage conditions with evaluation of tested maximum and minimum frequency at tested maximum and minimum voltage conditions. A chip-specific functionality voltage limit is established for the device.

Abstract: A method of optimizing power and timing for an integrated circuit (IC) chip, identifies a plurality of valid temperature and voltage combinations that allow integrated circuit chips produced according to the integrated circuit chip design to operate within average power consumption goals and timing delay goals. Such a method selects temperature cut points from the valid temperature and voltage combinations for each of the integrated circuit chips, calculates a power consumption amount of each of the temperature cut points, and adjusts the temperature cut points based on the power consumption amount until the temperature cut points achieve the average power consumption goals. Next, this method tests each of the integrated circuit chips, and records the temperature cut points in the memory of the integrated circuit chips.

Abstract: A method of reliability evaluation and system fail warning using on chip parametric monitors. The method includes determining impact of parametric variation on reliability by identifying key parametric questions to be answered by stress, identifying parametric macros for each parameter, and identifying layout sensitive areas of evaluation. The process can also include a set of parametric macros in one of a test site or a product to be stressed, testing the set of parametric macros prior to start of stress and at each stress read out, and setting life time parameter profile for technology.

Abstract: A method of optimizing power and timing for an integrated circuit (IC) chip, which uses an IC technology that exhibits temperature inversion, by modifying a voltage supplied to the IC chip, while meeting power consumption and timing delay performances across lower and higher temperature ranges. A high voltage is selected that meets a closed timing analysis across a full temperature range to meet a timing performance and a low voltage is selected to meet the timing performance and the power performance across a lower temperature range to a temperature cut point in the higher temperature range. The IC chip is turned on at the high voltage and the high voltage is lowered to the low voltage when the temperature cut point is exceeded to meet the power performance while maintaining the timing performance.

Abstract: Systems and methods receive a design of a circuit layout. The circuit layout has some available spaces. Such systems and methods automatically insert capacitor arrays in the specified spaces. Each of the capacitor arrays has capacitor cells, and each of the capacitor cells has capacitor structures and a buried implant. The process of inserting the capacitor arrays comprises a process of forming the capacitor arrays to either: grow the capacitor arrays to the size of the specified spaces; grow the capacitor arrays to a specified capacitance value within the restriction of the length dimension or the width dimension of the specified spaces; or grow the capacitor arrays to a specified capacitance value, irrespective of dimensional length dimension or width dimension limitations (where the only limitations are the dimensions of the specified space).

Abstract: A method of optimizing power and timing for an integrated circuit (IC) chip, which uses an IC technology that exhibits temperature inversion, by modifying a voltage supplied to the IC chip, while meeting power consumption and timing delay performances across lower and higher temperature ranges. A high voltage is selected that meets a closed timing analysis across a full temperature range to meet a timing performance and a low voltage is selected to meet the timing performance and the power performance across a lower temperature range to a temperature cut point in the higher temperature range. The IC chip is turned on at the high voltage and the high voltage is lowered to the low voltage when the temperature cut point is exceeded to meet the power performance while maintaining the timing performance.

Abstract: A method of test path selection and test program generation for performance testing integrated circuits. The method includes identifying clock domains having multiple data paths of an integrated circuit design having multiple clock domains; selecting, from the data paths, critical paths for each clock domain of the multiple clock domains; using a computer, for each clock domain of the multiple clock domain, selecting the sensitizable paths of the critical paths; for each clock domain of the multiple clock domain, selecting test paths from the sensitizable critical paths; and using a computer, creating a test program to performance test the test paths.

Abstract: Disclosed are embodiments of a method, system and computer program for optimizing system yield based on the results of post-manufacture integrated circuit (IC) chip performance path testing. In these embodiments, a correlation is made between IC chip performance measurements, which were acquired from IC chips specifically during post-manufacture (i.e., wafer-level or module-level) performance path testing, and system performance measurements, which were acquired from systems that incorporate those IC chips previously subjected to performance path testing. Based on this correlation and a target system performance value, a post-manufacture (i.e., wafer-level or module-level) chip dispositioning rule can be adjusted to optimize system yield (i.e., to ensure that subsequently manufactured systems which incorporate the IC chip meet the target system performance value).

Abstract: A method of reliability evaluation and system fail warning using on chip parametric monitors. The method includes determining impact of parametric variation on reliability by identifying key parametric questions to be answered by stress, identifying parametric macros for each parameter, and identifying layout sensitive areas of evaluation. The process can also include a set of parametric macros in one of a test site or a product to be stressed, testing the set of parametric macros prior to start of stress and at each stress read out, and setting life time parameter profile for technology.

Abstract: A method and system for dispositioning integrated circuit chips. The method includes performing a performance path test on an integrated circuit chip having one or more clock domains, the performance path test based on applying test patterns to selected sensitizable data paths of the integrated circuit chip at different clock frequencies; and dispositioning the integrated circuit chip based on results of the performance path test.

Abstract: A method and system for dispositioning integrated circuit chips. The method includes performing a performance path test on an integrated circuit chip having one or more clock domains, the performance path test based on applying test patterns to selected sensitizable data paths of the integrated circuit chip at different clock frequencies; and dispositioning the integrated circuit chip based on results of the performance path test.

Abstract: A method of test path selection and test program generation for performance testing integrated circuits.

Abstract: A plurality of digital circuits are manufactured from an identical circuit design. A power controller is operatively connect to the digital circuits, and a non-volatile storage medium is operatively connected to the power controller. The digital circuits are classified into different voltage bins, and each of the voltage bins has a current leakage limit. Each of the digital circuits has been previously tested to operate within a corresponding current leakage limit of a corresponding voltage bin into which each of the digital circuits has been classified. The non-volatile storage medium stores boundaries of the voltage bins as speed-binning test data. The power controller controls power-supply signals applied differently for each of the digital circuits based on which bin each of the digital circuit has been classified and the speed-binning test data.

Abstract: Techniques, systems, and methods are provided for optimizing pattern density fill patterns for integrated circuits. The method includes adjusting an area of a scribe line and a density of dummy fill shapes in the adjusted scribe line, while maintaining an area of the die, to achieve a pattern density associated with technology ground rules for a particular design of the die.

Abstract: A plurality of digital circuits are manufactured from an identical circuit design. A power controller is operatively connect to the digital circuits, and a non-volatile storage medium is operatively connected to the power controller. The digital circuits are classified into different voltage bins, and each of the voltage bins has a current leakage limit. Each of the digital circuits has been previously tested to operate within a corresponding current leakage limit of a corresponding voltage bin into which each of the digital circuits has been classified. The non-volatile storage medium stores boundaries of the voltage bins as speed-binning test data. The power controller controls power-supply signals applied differently for each of the digital circuits based on which bin each of the digital circuit has been classified and the speed-binning test data.

Abstract: A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed.

Abstract: A method of integrated circuit design and, more particularly, a method and system to optimize semiconductor products for power, performance, noise, die area, and cost through use of variable power supply voltage compression. The method is implemented in a computer-based tool and includes: embedding relationships in an optimization tool running on a computing device, wherein the relationships are based at least partly on performance, power-supply noise, die area, and power; inputting a set of product data and a set of technology data in the optimization tool running on the computing device; and determining product design parameters including power supply voltage, switching-noise-induced power supply voltage variation, and decap area. The determining is based on the relationships, the product data, and the technology data and is performed using the computing device running the optimization tool.

Abstract: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located at a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is approximately axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is approximately axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

Abstract: A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed.

Abstract: A method of reliability evaluation and system fail warning using on chip parametric monitors. The method includes determining impact of parametric variation on reliability by identifying key parametric questions to be answered by stress, identifying parametric macros for each parameter, and identifying layout sensitive areas of evaluation. The process can also include a set of parametric macros in one of a test site or a product to be stressed, testing the set of parametric macros prior to start of stress and at each stress read out, and setting life time parameter profile for technology.