Patents by Inventor Jen-Kuang Fang

Jen-Kuang Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7041534
    Abstract: A semiconductor chip package mainly includes a semiconductor chip, a first dielectric layer disposed on the semiconductor chip, a plurality of conductive traces electrically connected to the semiconductor chip, a second dielectric layer disposed on the conductive traces and the first dielectric layer wherein a portion of the conductive traces are exposed from the second dielectric layer, and a plurality of contacts for external connection formed on the exposed portion of the conductive traces. The semiconductor chip has a surface including an active area, a dummy area surrounding the active area, and a plurality of bonding pads disposed on the active area. The bonding pads are electrically connected to the contacts by the conductive traces. The present invention further provides methods for manufacturing the semiconductor chip package.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: May 9, 2006
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Shin Hua Chao, Jen Kuang Fang, Ho Ming Tong
  • Patent number: 6989326
    Abstract: A method of forming bumps on the active surface of a silicon wafer. A first under-bump metallic layer is formed over the active surface of the wafer. A second under-bump metallic layer is formed over the first under-bump metallic layer. A portion of the second under-bump metallic layer is removed to expose the first under-bump metallic layer. A plurality of solder bumps is implanted onto the second under-bump metallic layer. The exposed first under-bump metallic layer is removed so that only the first under-bump metallic layer underneath the second under-bump metallic layer remains.
    Type: Grant
    Filed: December 26, 2002
    Date of Patent: January 24, 2006
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee
  • Publication number: 20050282314
    Abstract: Printed circuit boards and methods for fabricating the same. A via in a printed circuit board electrically connects to trace lines of the PCB, such that only one plating line is required to electrically connect a plating bus and the plating through hole. Thus, in an electroplating step, current can flow to fingers in the trace lines to plate an anti-oxidation metal layer thereon. The via is separated into several sub-vias to electrically isolate the plating line from trace lines and fingers, each of which connects to the plating line or the trace lines. Finally, at least one plating line remains, thus avoiding negative impact on electrical performance of an electronic device that uses the printed circuit board.
    Type: Application
    Filed: June 13, 2005
    Publication date: December 22, 2005
    Inventors: Kuang-Lin Lo, Jen-Kuang Fang
  • Patent number: 6972583
    Abstract: The present invention discloses a test method for the electrical characteristics of the bumps on wafer. That is, the bumps on the scribe lines and the bumps on the neighbor chips are in the status of electrical connections, therefore the electrical characteristics of the bumps on the neighboring chips could be verified by utilizing a probe to touch the bumps on the scribe lines. Because the bumps on the neighboring chips are not really contacted with the probe, the intact profile of the bumps on the neighboring chips certainly keeps the same.
    Type: Grant
    Filed: May 13, 2002
    Date of Patent: December 6, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventor: Jen-Kuang Fang
  • Patent number: 6967153
    Abstract: A bump fabrication process for forming a bump over a wafer having a plurality of bonding pads thereon is provided. A patterned solder mask layer having a plurality of openings that exposes the respective bonding pads is formed over a wafer. The area of the opening in a the cross-sectional area through a the bottom-section as well as through a the top-section of the opening is smaller than the area of the opening in a the cross-sectional area through a the mid-section of the opening. Solder material is deposited into the opening and then a reflow process is conducted fusing the solder material together to form a spherical bump inside the opening. Finally, the solder mask layer is removed. In addition, a pre-formed bump may form on the bonding pad of the wafer prior to forming the patterned solder mask layer over the wafer having at least with an opening that exposes the pre-formed bump.
    Type: Grant
    Filed: February 10, 2003
    Date of Patent: November 22, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
  • Publication number: 20050246892
    Abstract: A fabrication method for PCBs. The method includes providing a substrate having a layout area and a periphery area around the layout area on a surface, forming a patterned wiring layer, having a bus line in the periphery area, a plurality of pads in the layout area, a plurality of bridge lines providing electrical connection between the pads, and a plating line electrically connecting the bus line and pads, overlying the substrate, forming a patterned solder mask over the substrate and wiring layer, the patterned solder mask having a plurality of first openings respectively exposing the pads and plating a metal layer respectively overlying the pads, forming a plurality of second openings respectively exposing the bridge lines between the pads, and removing the exposed bridge lines.
    Type: Application
    Filed: May 4, 2005
    Publication date: November 10, 2005
    Inventors: Hung-Nan Chen, Jen-Kuang Fang, Kuang-Lin Lo
  • Patent number: 6933616
    Abstract: The present invention discloses a multi-chip module packaging device which has outward extension portions of under bump metallurgies (UBM) for satisfying the bonding area requirement during wire bonding operation. Therefore, chips have electrical connections with metal bonding wires welded on the extended portions for transmitting electrical signals between each other. That is, the number of circuit layers of the substrate used in the device can be reduced; furthermore save on the production cost.
    Type: Grant
    Filed: October 29, 2002
    Date of Patent: August 23, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventor: Jen-Kuang Fang
  • Patent number: 6927964
    Abstract: A semiconductor device with a capability can prevent a burnt fuse pad from re-electrical connection, wherein the semiconductor device includes a bump pad and a fuse pad over a wafer. The fuse pad includes the burnt fuse pad having a gap for electrical isolation. The semiconductor device comprises a dielectric layer, disposed substantially above the burnt fuse pad and filling the gap, and a bump structure, disposed on the bump pad. The foregoing semiconductor device can further comprise a passivation layer, which exposes the bump pad and a portion of the burnt fuse pad. Wherein, the dielectric layer is over the passivation layer, covers the exposed portion of the burnt fuse pad and fills the gap.
    Type: Grant
    Filed: August 15, 2003
    Date of Patent: August 9, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
  • Patent number: 6924557
    Abstract: The present invention discloses a semiconductor package, wherein several chips can be packed thereinto. The present invention uses under bump metallurgies or bonding wires to connect the associated circuits of at least two chips in serial or in parallel. At least one slicing path is located between the at least two chips and a substrate is provided with an upper surface and a lower surface in which the upper surface is flip-chip bonded with the at least two chips.
    Type: Grant
    Filed: December 23, 2002
    Date of Patent: August 2, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventor: Jen-Kuang Fang
  • Publication number: 20050161812
    Abstract: A wafer-level package structure, applicable to a flip-chip type arrangement on a carrier having a plurality of contact points is described. This wafer-level package structure comprises a chip having a protective layer and a plurality of bonding pads and a conductive layer. The conductive layer is arranged on the bonding pads of the chip as contact points. The wafer-level package structure can further include a heat sink to enhance the heat dissipation ability of the package structure.
    Type: Application
    Filed: April 14, 2005
    Publication date: July 28, 2005
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shou Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
  • Patent number: 6916732
    Abstract: A method of forming a plurality of bumps over a wafer. The wafer has an active surface having a passivation layer and a plurality of contact pads thereon. The passivation layer exposes the contact pads on the active surface. An adhesion layer is formed over the active surface of the wafer and covers both the contact pads and the passivation layer. A metallic layer is formed over the adhesion layer. The adhesion layer and the metallic layer are patterned so that the adhesion layer and the metallic layer remain on top of the contact pads. A photoresist layer is formed on the active surface of the wafer. The photoresist layer has a plurality of openings that expose the metallic layer. Flux material is deposited into the openings and then a solder block is disposed into each of the openings. A reflow process is carried out so that the solder block bonds with the metallic layer. Finally, the flux material and the photoresist layer are removed.
    Type: Grant
    Filed: July 11, 2003
    Date of Patent: July 12, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Tsung-Hua Wu, Min-Lung Huang, Shih-Chang Lee, Jen-Kuang Fang, Yung-I Yeh
  • Publication number: 20050085061
    Abstract: The present invention provides a method of forming a plurality of bumps over a wafer. The wafer has a plurality of contact pads and a passivation layer thereon and the passivation layer exposes the contact pads. An adhesion layer is formed over the active surface of the wafer and covers both the contact pads and the passivation layer. A metallic layer is formed over the adhesion layer. The patterned adhesion layer and patterned metallic layer remain on top of the contact pads. A photoresist layer having a plurality of openings that expose the metallic layer is formed on the active surface of the wafer. A flux material is deposited into the openings and then a solder block is disposed into each of the openings. A reflow process is performed to bond the solder block with the metallic layer. Finally, the flux material and the photoresist layer are removed.
    Type: Application
    Filed: November 19, 2004
    Publication date: April 21, 2005
    Inventors: Tsung-Hua Wu, Min-Lung Huang, Shih-Chang Lee, Jen-Kuang Fang, Yung-I Yeh
  • Patent number: 6878963
    Abstract: The present invention discloses a device for testing electrical characteristics of a chip, which is capable of verifying whether each chip can meet the requirement of the electrical specifications, and sort out the chips under the specifications. The invention utilizes a probe to contact the extension area of the under bump metallurgy to detect if the electrical characteristics of the chip can meet the requirement of the specifications. As the bumps on the chip do not actually contact the probe, the intact profile for the bumps on the chips can be assuredly kept so that the problem of voids existing in the melted bumps during reflow process can be avoided.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: April 12, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventor: Jen-Kuang Fang
  • Patent number: 6877653
    Abstract: A method of modifying the tin to lead ratio of a tin-lead bump forms a patterned solder mask over a substrate that comprises a first tin-lead bump formed thereon, the patterned solder mask having an opening that exposes the tin-lead bump. A solder material including tin and lead is filled in the opening of the solder mask over the first tin-lead bump. The solder material has a tin to lead ratio that differs from that of the first tin-lead bump. The solder material is reflowed to fuse with the first tin-lead bump, which forms a second tin-lead bump. The tin to lead ratio of the second tin-lead bump is thereby different from that of the first tin-lead bump.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: April 12, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
  • Patent number: 6875683
    Abstract: A method of forming a bump on an active surface of a wafer is disclosed. The method of the invention forms an under ball metallurgy (UBM) onto the active surface of the wafer. Then, the UBM is partially removed until a portion of the active surface of the wafer is exposed. At least one conductive stud is bonded onto the non-removed UBM by wire bonding.
    Type: Grant
    Filed: May 3, 2002
    Date of Patent: April 5, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee
  • Patent number: 6861346
    Abstract: A solder ball fabricating process for forming solder balls over a wafer having an active layer is provided. A patterned solder mask layer is formed over the active surface of the wafer. The patterned solder mask layer has an opening that exposes a bonding pad on the wafer. Solder material is deposited into the opening over the bonding pad. A reflow process is conducted to form a pre-solder body. The aforementioned steps are repeated so that various solder materials are fused together to form a solder ball over the bonding pad.
    Type: Grant
    Filed: August 14, 2003
    Date of Patent: March 1, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou
  • Patent number: 6846719
    Abstract: A wafer bump fabrication process is provided in the present invention. A wafer with multiple bonding pads and a passivation layer, which exposes the bonding pads, is provided. The surface of each bonding pad has an under bump metallurgy layer. A patterned photoresist layer with a plurality of opening is formed which openings expose the under bump metallurgy layer. Afterwards a curing process is performed to cure the patterned photoresist layer. Following a solder paste fill-in process is performed to fill a solder paste into the openings. A reflow process is performed to form bumps from the solder paste in the openings. The patterned photoresist layer is removed.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: January 25, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
  • Publication number: 20050001303
    Abstract: The present invention discloses a method of manufacturing a multi-chip stacking package. The characteristic of the invention is that after the alignment of the bumps of at least two chips, welded bumps will be generated in a high temperature welding to form a welded bump. Furthermore, one of the at least two chips may only provide bonding pad similar to the Under Bump Metallurgy and may not provide bumps, and using the bonding pad to be welded with the bump on another chip.
    Type: Application
    Filed: June 2, 2004
    Publication date: January 6, 2005
    Inventor: Jen-Kuang Fang
  • Patent number: 6838311
    Abstract: The present invention relates to a flip chip package comprising a chip assembly, a substrate, and an underfill material. The chip assembly has at least one chip. Each chips has a plurality of bond pads formed on a bottom portion of the chip. Each bond pad has a first solder bump formed on the bond pad. The chips are packaged by molding compound to form the chip assembly. The chip assembly has a bottom surface exposing a portion of the first solder bumps. The substrate has a plurality of support pads formed on a top surface of the substrate. Each support pad has a second solder bump formed on the support pad. The first solder bumps electrically connect to the second solder bumps to support the chip assembly by the substrate. The underfill material fills into a gap between the bottom surface of the chip assembly and the top surface of the substrate so as to form the flip chip package.
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: January 4, 2005
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventor: Jen-Kuang Fang
  • Patent number: 6827252
    Abstract: A method of forming bumps on the active surface of a silicon wafer. An under-ball metallic layer is formed over the active surface of the wafer. A plurality of first solder blocks is attached to the upper surface of the under-ball metallic layer. Each first solder block has an upper surface and a lower surface. The lower surface of each first solder block bonds with the under-ball metallic layer. The upper surfaces of the first solder blocks are planarized. A second solder block is attached to the upper surface of each first solder block and then a reflow operation is carried out.
    Type: Grant
    Filed: May 3, 2002
    Date of Patent: December 7, 2004
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee