Abstract: The present invention provides a solution to avoid the robustness problems of sub-threshold circuits by switching small parts of circuits to nominal-voltage only when they are being used, and switching them back to sub-threshold levels when the operation finishes. Such “hybrid sub-threshold” approach is capable of supporting ultra-low power operation without the disadvantages of sub-threshold circuits. Hybrid power saving mode for logic circuits provide significant power saving and fast recovery time without performance degradation.

Abstract: The present invention provides a solution to avoid the robustness problems of sub-threshold circuits by switching small parts of circuits to nominal-voltage only when they are being used, and switching them back to sub-threshold levels when the operation finishes. Such “hybrid sub-threshold” approach is capable of supporting ultra-low power operation without the disadvantages of sub-threshold circuits.

Abstract: The present invention provides high performance, low power signal transfer methods for linking large numbers of integrated chips into ultra-high capacity circuits; Example application of the present invention including ultra-high capacity memory systems, and router systems.

Abstract: The present invention provides a solution to avoid the robustness problems of sub-threshold circuits by switching small parts of circuits to nominal-voltage only when they are being used, and switching them back to sub-threshold levels when the operation finishes. Such “hybrid sub-threshold” approach is capable of supporting ultra-low power operation without the disadvantages of sub-threshold circuits.

Abstract: The present invention provides memory system architectures developed to increase the capacity of memory systems. Typically applications including the main memory of computers. Memory systems of the present invention can achieve capacities larger than prior art systems by one or two orders of magnitudes without significant degradation in performance while using system interfaces that are compatible with existing memory systems with no or minimal modifications.

Abstract: The present invention provides memory system architectures developed to increase the capacity of memory systems. Typically applications including the main memory of computers. Memory systems of the present invention can achieve capacities larger than prior art systems by one or two orders of magnitudes without significant degradation in performance while using system interfaces that are compatible with existing memory systems with no or minimal modifications.

Abstract: The present invention provides memory system architectures developed to increase the capacity of memory systems. Typically applications including the main memory of computers. Memory systems of the present invention can achieve capacities larger than prior art systems by one or two orders of magnitudes without significant degradation in performance while using system interfaces that are compatible with existing memory systems with no or minimal modifications.

Abstract: Long existing performance, noise, and power consumption problems of prior art output drivers are solved by using n-channel transistors as pull up transistors and/or p-channel transistors as pull down transistors for high performance output drivers. Output drivers of the present invention can be fully compatible with HSTL, SSTL, LVDS, MIPI, or MDDI interfaces without using termination resistors. High resolution switching applications are also made possible without consuming much power. Output drivers of the present invention provide excellent solutions to support high performance interface while consuming much lower power.

Abstract: The present invention is related to sound generating devices such as audio speakers. Prior art audio speakers typically have inertia related distortion. The present invention provides methods and structures to solve the inertia distortion problem by stop-and-forget mechanism using stoppers.

Abstract: The present invention provides structures and methods for manufacturing thin film optical devices that perform the functions of prior art focal lenses. Multiple light beams are guided to the same focal point through thin film optical fiber channels with IC grade precision. The optical fiber lens of the present invention provides significant improvement for applications such as compact disk drivers, scanners, copy machines, and surgery knifes.

Abstract: A data access system for accessing data stored in a first and a second memory devices. The first and second memory devices have a difference of latency ?L that constitutes a time-duration by which the first memory device starts an initial data access earlier than in the second memory device. A data access controller is implemented to simultaneously access data in the first and second memory devices and to stop accessing data in the first memory device once a data access operation has begun in the second memory device. Therefore, the first memory device stored data only accessed initially in a time duration corresponding substantially to the difference of latency ?L before the data access operations is started in the second memory device.

Abstract: This invention provides practical methods to make a DRAM fully compatible with existing SRAM products. This is accomplished by design and manufacture methods according to the invention, which includes a method to reduce standby power of reference voltage generators and a method to avoid the alpha particle problem using a novel error correction code (ECC) mechanism. The reference voltage generator of the present invention can adjust the values of output voltage and driving power separately following simple procedures. It has very strong driving power to maintain the reference voltage, which is necessary to support high-speed operation of memory devices of the present invention. In the mean time, its standby power can be reduced by orders of magnitudes using simple control mechanism, which is necessary to make our memory device compatible with the properties of existing SRAM products. There is no need to use feedback circuits or operation amplifiers, so the circuit is extremely stable and reliable.

Abstract: The present invention provides structures and methods for expanding the functions of cellular phones. Practical applications in using cellular phones to support the functions of remote controllers, credit cards, automatic teller machine (ATM) cards, membership cards, insurance cards, business cards, and entertainment applications are discussed. Security features for cellular phone resource management systems and cellular phone direct communication methods are provided to facilitate expandable cellular phone functions.

Abstract: Long existing performance, noise, and power consumption problems of prior art output drivers are solved by using n-channel transistors as pull up transistors and/or p-channel transistors as pull down transistors for high performance output drivers. Output drivers of the present invention can be fully compatible with HSTL or SSTL interfaces without using termination resistors. High resolution switching applications are also made possible without consuming much power. Output drivers of the present invention provide excellent solutions to support high performance interface while consuming much lower power.

Abstract: The present invention provides methods to convert motion into electrical energy. These electrical power generators are made compatible with standard batteries so that they can support operations of existing battery powered portable appliances with no or minimal modifications. Electrical power generators of the present invention are therefore more convenient to use than conventional batteries while reducing the needs to replace or recharge batteries. Environment friendly methods are also introduced for generating electrical power.

Abstract: Long existing performance, noise, and power consumption problems of prior art output drivers are solved by using n-channel transistors as pull up transistors and p-channel transistors as pull down transistors for high performance output drivers. Output drivers of the present invention can be fully compatible with HSTL or SSTL interfaces without using termination resistors. High resolution switching applications are also made possible without consuming much power. Output drivers of the present invention provide excellent solutions to support high performance interface while consuming much lower power.

Abstract: The present invention discloses novel methods to transfer data between a plurality of integrated circuit dice on a semiconductor wafer. Each individual die contains internal circuits to control data transfer to nearby dice. Wafer level data transfer is achieved by a series of inter-dice data transfers. It is therefore possible to use a small number of small area metal lines to support wafer level parallel processing activities. External connections are provided by a small number of bonding pads on each wafer. The load on each external bounding pad is by far lower than that of prior art wafer level connections. These inter-dice data transfer mechanism also can be programmed to avoid defective circuitry. This invention has been used to support wafer level functional tests and wafer level burn-in tests. A Testing system of the present invention can test thousands of dice in parallel using simple testing equipment. Testing costs for integrated circuits are therefore reduced dramatically.

Abstract: The present invention provides methods to convert motion into electrical energy. These electrical power generators are made compatible with standard batteries so that they can support operations of existing battery powered portable appliances with no or minimal modifications. Electrical power generators of the present invention are therefore more convenient to use than conventional batteries while reducing the needs to replace or recharge batteries. Environment friendly methods are also introduced for generating electrical power.

Abstract: Long existing performance, noise, and power consumption problems of prior art output drivers are solved by using n-channel transistors as pull up transistors and p-channel transistors as pull down transistors for high performance output drivers. Output drivers of the present invention can be fully compatible with HSTL or SSTL interfaces without using termination resistors. High resolution switching applications are also made possible without consuming much power. Output drivers of the present invention provide excellent solutions to support high performance interface while consuming much lower power.

Abstract: Using 6 transistor memory cell to replace prior art 10 transistor binary content addressable memory (CAM) cells, and using 10 transistor ternary CAM (TCAM) cell to replace prior art 16 transistor TCAM cells, the present invention provided significant cost saving for high density CAM products. The power consumption problems of prior art high density CAM devices are solved by novel zoned lookup mechanism. For a high density CAM storing sorted data, lookup mechanisms of the present invention can reduce power consumption by two orders of magnitudes.