Abstract: A cathode active material precursor according to embodiments of the present invention includes a composite hydroxide particle in which primary precursor particles are aggregated. The primary precursor particles include a particle having a triangular shape in which a minimum interior angle is 300 or more and a ratio of a length of a short side relative to a length of a long side is 0.5 or more. A cathode active material and a lithium secondary having improved high temperature stability is provided using the cathode active material precursor.

Abstract: A semiconductor memory device is disclosed. The device may include an electrode structure including electrodes, the electrodes stacked on a substrate, a source semiconductor layer between the substrate and the electrode structure, and a vertical channel structure penetrating the electrode structure. The vertical channel structure includes a vertical insulating pattern, a vertical semiconductor pattern spaced apart from the electrode structure with the vertical insulating pattern interposed between the vertical semiconductor pattern and the electrode structure; and a barrier pattern spaced apart from the electrode structure with the vertical semiconductor pattern interposed between the barrier pattern and the electrode structure. The vertical semiconductor pattern comprises a recess region, the source semiconductor layer extending in the recess region. The barrier pattern includes an insulating layer including carbon.

Abstract: A cathode active material for a lithium secondary battery of embodiments of the present invention includes a lithium composite oxide, a first coating part formed on a surface of the lithium composite oxide and containing aluminum, and a second coating part formed on the first coating part and containing boron. Thereby, stability and electrical characteristics of the secondary battery may be improved.

Abstract: A cathode active material for a lithium secondary battery of embodiments of the present invention includes a lithium composite oxide, a first coating part formed on a surface of the lithium composite oxide and containing aluminum, and a second coating part formed on the first coating part and containing boron. Thereby, stability and electrical characteristics of the secondary battery may be improved.

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

Abstract: Provided is a washing machine including a rib extending outward from a central portion of a rear portion of a tub. One end of the rib is provided adjacent to the central portion of the tub, the other end of the rib is provided adjacent to an outer side of the tub, and since a width of the one end of the rib is greater than a width of the other end of the rib, thereby maintaining efficient rigidity against stress generated in the rear portion of the tub. Further, in order to secure rigidity against stress due to vibrations generated by a driving motor, an additional rib is included between a side to which the driving motor is coupled and the outer side of the tub, thereby efficiently maintaining rigidity against additional stress.

Abstract: A home appliance in which an opening and closing operation of a door and a turning operation of a handle are connected through five joints, so that the turning operation of the handle can be performed smoothly, and a latch for fixing the door to a body moves to a position parallel to the door when the door is opened, so that a user is prevented from being interfered with the latch while opening the door and using a cavity of the home appliance.

Abstract: A cathode active material for a lithium secondary battery includes a lithium-aluminum-titanium oxide formed on a surface of a lithium metal oxide particle having a specific formula. The cathode active material may have an improved structural stability even in a high temperature condition.

Abstract: Disclosed is a display device including a display panel having a plurality of pixels, each of the pixels including at least two subpixels, the display panel including a first display area and a second display area, the second display area being disposed to overlap an optical module, a memory configured to store shape information of the second display area including position information of a starting point, vertical length information of the second display area, and line-based direction information and width information indicating the border of the second display area, and a controller configured to change an image that is displayed in at least one of the first display area and the second display area using the shape information of the second display area and to perform control such that the changed image is displayed on the display panel.

Abstract: A vertical memory device may include a channel connecting pattern on a substrate, gate electrodes spaced apart from each other in a first direction on the channel connecting pattern, and a channel extending in the first direction through the gate electrodes and the channel connecting pattern. Each of the electrodes may extend in a second direction substantially parallel to an upper surface of the substrate, and the first direction may be substantially perpendicular to the upper surface of the substrate. An end portion of the channel connecting pattern in a third direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the second direction may have an upper surface higher than an upper surface of other portions of the channel connecting pattern except for a portion thereof adjacent the channel.

Abstract: A cathode active material for a lithium secondary battery includes a lithium-aluminum-titanium oxide formed on a surface of a lithium metal oxide particle having a specific formula. The cathode active material may have an improved structural stability even in a high temperature condition.

Abstract: A semiconductor memory device has a plurality of gates vertically stacked on a top surface of a substrate, a vertical channel filling a vertical hole that extends vertically through the plurality of gates, and a memory layer in the vertical hole and surrounding the vertical channel. The vertical channel includes a bracket-shaped lower portion filling part of a recess in the top of the substrate and an upper portion extending vertically along the vertical hole and connected to the lower channel. At least one end of an interface between the lower and upper portions of the vertical channel is disposed at a level not than that of the top surface of the substrate.

Abstract: In a method of manufacturing a cathode active material for a lithium secondary battery, a preliminary lithium metal oxide particle is prepared. The preliminary lithium metal oxide particle is cleaned using a boron compound cleaning solution. A cathode active material for a lithium secondary particle includes a lithium metal oxide particle where a ratio of a B+ peak intensity relative to a sum of peak intensities of Li+, B+ and LiB+ fragments by a TOF-SIMS analysis is in a range from 0.03% to 1.5%.

Abstract: A vertical memory device may include a channel connecting pattern on a substrate, gate electrodes spaced apart from each other in a first direction on the channel connecting pattern, and a channel extending in the first direction through the gate electrodes and the channel connecting pattern. Each of the electrodes may extend in a second direction substantially parallel to an upper surface of the substrate, and the first direction may be substantially perpendicular to the upper surface of the substrate. An end portion of the channel connecting pattern in a third direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the second direction may have an upper surface higher than an upper surface of other portions of the channel connecting pattern except for a portion thereof adjacent the channel.

Abstract: A three-dimensional semiconductor memory device includes an electrode structure including electrodes vertically stacked on a semiconductor layer, a vertical semiconductor pattern penetrating the electrode structure and connected to the semiconductor layer, and a vertical insulating pattern between the electrode structure and the vertical semiconductor pattern. The vertical insulating pattern includes a sidewall portion on a sidewall of the electrode structure, and a protrusion extending from the sidewall portion along a portion of a top surface of the semiconductor layer. The vertical semiconductor pattern includes a vertical channel portion having a first thickness and extending along the sidewall portion of the vertical insulating pattern, and a contact portion extending from the vertical channel portion and conformally along the protrusion of the vertical insulating pattern and the top surface of the semiconductor layer. The contact portion has a second thickness greater than the first thickness.

Abstract: Disclosed is a display device including a display panel having a plurality of pixels, each of the pixels including at least two subpixels, the display panel including a first display area and a second display area, the second display area being disposed to overlap an optical module, a memory configured to store shape information of the second display area including position information of a starting point, vertical length information of the second display area, and line-based direction information and width information indicating the border of the second display area, and a controller configured to change an image that is displayed in at least one of the first display area and the second display area using the shape information of the second display area and to perform control such that the changed image is displayed on the display panel.

Abstract: Disclosed is a display device including a display panel having a plurality of pixels, the display panel including a first display area having first resolution and a second display area having second resolution, the second resolution being lower than the first resolution, and a controller configured to generate border information of pixels provided in a border area located within a predetermined range from the border between the first display area and the second display area, to correct an image that is displayed in the border area based on the border information, and to perform control such that the corrected image is displayed on the display panel.

Abstract: Disclosed is a display device including a display panel having a plurality of pixels, the display panel comprising a first display area and a second display area, the second display area being disposed so as to overlap an optical module, and a controller configured to generate display area information of each of the plurality of pixels and border information of pixels provided in a border area located within a predetermined range from a border between the first display area and the second display area, to change an image that is displayed in at least one of the first display area or the second display area based on the display area information and the border information upon determining that the optical module is operated, and to perform control such that the changed image is displayed on the display panel.

Abstract: Disclosed is a display device including a display panel having a plurality of pixels, the display panel comprising a first display area having first resolution and a second display area having second resolution, the second resolution being lower than the first resolution, and a controller configured to generate display area information of each of the plurality of pixels, to blur an image that is displayed in the second display area based on the display area information, and to perform control such that the blurred image is displayed on the display panel.

Abstract: A three-dimensional semiconductor memory device is disclosed. The device may include a first source conductive pattern comprising a polycrystalline material including first crystal grains on a substrate, the substrate may comprising a polycrystalline material including second crystal grains, a grain size of the first crystal grains being smaller than a grain size of the second crystal grains, a stack including a plurality of gate electrodes, the plurality of gates stacked on the first source conductive pattern, and a vertical channel portion penetrating the stack and the first source conductive pattern, and the vertical channel portion being in contact with a side surface of the first source conductive pattern.