Patents by Inventor Ji Hoon Choi

Ji Hoon Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LAUNDRY MACHINE
    Publication number: 20180258577
    Abstract: Provided is a washing machine including a rib extending outward from a central portion of a rear portion of a tub. One end of the rib is provided adjacent to the central portion of the tub, the other end of the rib is provided adjacent to an outer side of the tub, and since a width of the one end of the rib is greater than a width of the other end of the rib, thereby maintaining efficient rigidity against stress generated in the rear portion of the tub. Further, in order to secure rigidity against stress due to vibrations generated by a driving motor, an additional rib is included between a side to which the driving motor is coupled and the outer side of the tub, thereby efficiently maintaining rigidity against additional stress.
    Type: Application
    Filed: August 12, 2016
    Publication date: September 13, 2018
    Inventors: Jung Hee LEE, Jeong Hoon KANG, Min Sung KIM, Ji Hoon CHOI, Kwan Woo HONG
  • Image processing apparatus and method for performing preprocessing to obtain image with improved sharpness
    Patent number: 10007972
    Abstract: An image processing apparatus for transforming a wide-angle image into a narrow-angle image includes a deblurrer performing deblurring on the wide-angle image to generate a deblurred image; a super-resolution (SR) unit performing SR processing on the deblurred image to generate an upscaled transformed image; and a view transformer performing view transformation to obtain the narrow-angle image based on the wide-angle image and the upscaled transformed image.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: June 26, 2018
    Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION, INHA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Jin Wook Choi, Byung Cheol Song, Dong Yoon Choi, Ji Hoon Choi
  • Semiconductor devices with charge fixing layers
    Patent number: 10002875
    Abstract: A semiconductor device may include gate electrodes and interlayer insulating layers alternately stacked on a substrate, a channel layer penetrating the gate electrodes and the interlayer insulating layers, a gate dielectric layer between the gate electrodes and the channel layer, a filling insulation that fills at least a portion of an interior of the channel layer, a charge fixing layer between the channel layer and the filling insulation and including a high-k material and/or a metal, and a conductive pad connected to the channel layer and on the filling insulation. The conductive pad may be physically separated from the charge fixing layer.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: June 19, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Phil Ouk Nam, Hyung Joon Kim, Sung Gil Kim, Ji Hoon Choi, Seulye Kim, Hong Suk Kim, Jae Young Ahn
  • HOME APPLIANCE HAVING LEVELING DOOR HANDLE
    Publication number: 20180163443
    Abstract: A home appliance in which an opening and closing operation of a door and a turning operation of a handle are connected through five joints, so that the turning operation of the handle can be performed smoothly, and a latch for fixing the door to a body moves to a position parallel to the door when the door is opened, so that a user is prevented from being interfered with the latch while opening the door and using a cavity of the home appliance.
    Type: Application
    Filed: December 8, 2017
    Publication date: June 14, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wan Gi PARK, Ji-Hoon Choi, Young Jun Cho, Han Seong Kang, Hwa Gyu Reo, Simon Ireland, Byeong Woo Ahn, Pung Yeun Cho
  • Washing machine and method for controlling the same
    Patent number: 9994986
    Abstract: A washing machine includes: a tub configured to accommodate wash water therein; a rotary tub rotatably mounted in the tub; a pulsator rotatably arranged below the rotary tub, configured to form a water current; a motor configured to provide driving power to the pulsator; and a floater configured to ascend or descend in response to a water level of the wash water in such a manner that the pulsator and the rotary tub interact with each other or the interaction therebetween is released. The pulsator includes a reinforcement rib protruding from a bottom surface of the pulsator to reinforce stiffness. The floater is connected to the reinforcement rib in a manner that the floater ascends or descends along the reinforcement rib. The washing machine can alternatively transmit the driving power of the motor only to the pulsator or to the pulsator and the rotary tub.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: June 12, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Oh Kim, Young Myung Son, Ji Hoon Choi
  • SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20180122907
    Abstract: A semiconductor device includes a substrate, a plurality of gate electrodes extending in a first direction parallel to an upper surface of a substrate on the substrate, and alternately arranged with an interlayer insulating layer in a second direction perpendicular to the upper surface of the substrate, a vertical channel layer on a sidewall of a vertical channel hole extending in the second direction by penetrating through the plurality of gate electrodes and the interlayer insulating layer, and connected to the upper surface of the substrate, and a first gap-fill insulating layer formed in the vertical channel hole and including an outer wall contacting the vertical channel layer and an inner wall opposite the outer wall, wherein a part of the inner wall forms a striation extending in the second direction.
    Type: Application
    Filed: July 11, 2017
    Publication date: May 3, 2018
    Inventors: Ji-hoon CHOI, Hong-suk KIM, Sung-gil KIM, Phil-ouk NAM, Seul-ye KIM, Han-jin LIM, Jae-young AHN
  • Three-dimensional semiconductor memory device and method of fabricating the same
    Patent number: 9960182
    Abstract: A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: May 1, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji-Hoon Choi, SeungHyun Lim, Sunggil Kim, HongSuk Kim, Hunhyeong Lim, Hyunjun Sim
  • Memory device
    Patent number: 9953999
    Abstract: In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At least one of the gate electrode layers has a first portion and a second portion. The second portion forms an end portion of the at least one gate electrode layer, and a bottom surface of the second portion is at a lower level than a bottom surface of the first portion. A contact plug extends from the second portion.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: April 24, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Phil Ouk Nam, Sung Gil Kim, Seulye Kim, Hong Suk Kim, Jae Young Ahn, Ji Hoon Choi
  • SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER
    Publication number: 20180108672
    Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.
    Type: Application
    Filed: April 11, 2017
    Publication date: April 19, 2018
    Inventors: Ji Hoon CHOI, Sung Gil KIM, Seulye KIM, Jung Ho KIM, Hong Suk KIM, Phil Ouk NAM, Jae Young AHN, Han Jin LIM
  • Semiconductor Memory Devices
    Publication number: 20180097006
    Abstract: A semiconductor memory device may include: a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on a substrate; a lower semiconductor pattern that protrudes from the top of the substrate; a vertical insulating pattern that extends in a vertical direction from the substrate and penetrates the stacking structure; and a vertical channel pattern on the inner surface of the vertical insulating pattern and contacting the lower semiconductor pattern, wherein an upper part of the lower semiconductor pattern includes a recess region including a curve-shaped profile, and in the recess region, the outer surface of a lower part of the vertical channel pattern contacts the lower semiconductor pattern along a curve of the recess region.
    Type: Application
    Filed: April 6, 2017
    Publication date: April 5, 2018
    Inventors: Sung Gil Kim, Ji-Hoon Choi, Dongkyum Kim, Jintae Noh, Seulye Kim, Hong Suk Kim, Phil Ouk Nam, Jaeyoung Ahn
  • POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, METHOD FOR PREPARING THE SAME, AND SECONDARY BATTERY INCLUDING THE SAME
    Publication number: 20180090782
    Abstract: The present invention relates to a positive electrode active material for a secondary battery, a method for preparing the same, and a secondary battery including the same, and more particularly to a positive electrode active material for a secondary battery, which includes lithium transition metal oxide particles represented by Formula 1; and lithium metal phosphate nanoparticles disposed on the surface of the lithium transition metal oxide particles and represented by Formula 2, a method for preparing the same, and a lithium secondary battery including the same. Li(1+a)(Ni1-b-cMbCoc)O2??[Formula 1] In which, M is at least one metal selected from the group consisting of Mn, Al, Cu, Fe, Mg, Cr, Sr, V, Sc and Y, 0?a?0.2, 0?b?1, and 0?c?1. Li1+xM?xM?2-x(PO4)3??[Formula 2] In which, M? is Al, Y, Cr, or Ca, M? is Ge, Ti, Sn, Hf, Zn, or Zr, and 0?x?0.5.
    Type: Application
    Filed: April 27, 2016
    Publication date: March 29, 2018
    Applicant: LG Chem, Ltd.
    Inventors: Ji Hoon Choi, In Kook Jun, Seung Beom Cho
  • TETRAHYDROPYRIDINE DERIVATIVES AND THEIR USE AS ANTIBACTERIAL AGENTS
    Publication number: 20180086709
    Abstract: The present disclosure relates to a novel tetrahydropyridine derivative compound, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof, methods for preparing the compounds, methods for inhibiting UDP-3-O—(R-3-hydroxymyristoyl)-N-acetylglucosamine deacetylase (LpxC), methods for treating Gram-negative bacterial infections, the use of the compounds for the preparation of therapeutic medicaments for treating Gram-negative bacterial infections, and pharmaceutical compositions for prevention or treatment of Gram-negative bacterial infections, which contain the compounds. The compounds represented by formula I, stereoisomers thereof or pharmaceutically acceptable salts thereof according to the present disclosure can exhibit excellent effects on the treatment bacterial infections.
    Type: Application
    Filed: September 28, 2017
    Publication date: March 29, 2018
    Inventors: Sun-Ho Choi, Weon-Bin Im, Sung-Hak Choi, Chong-Hwan Cho, Ho-Sang Moon, Jung-Sang Park, Min-Jung Lee, Hyun-Jung Sung, Jun-Hwan Moon, Seung-Hyun Song, Hyung-Keun Lee, Ji-Hoon Choi, Cheon-Hyoung Park, Yoon-Jung Kim, Jin-Hyuk Kim
  • Refrigerator
    Patent number: 9920975
    Abstract: A refrigerator includes a mid-frame positioned on a front surface of the main body wall and a heater configured to heat the mid-frame and provided at the mid-frame. The mid-frame includes a front frame provided to cover at least a part of a front surface of the at least one inner box configured to form the main body wall, and an extension frame formed to extend rearward from the front frame and including an edge portion in which an end portion of the extension frame has a thickness greater than that of an adjacent extension frame.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: March 20, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Bum Kim, Kyung Mok Yoo, Hyun Joo Kim, Kwang Su Heo, Eung Ryeol Seo, In-Yong Hwang, Ji Hoon Choi, Jeong Hoon Kang, Mi Jung Lee
  • Semiconductor Devices with Charge Fixing Layers
    Publication number: 20180053775
    Abstract: A semiconductor device may include gate electrodes and interlayer insulating layers alternately stacked on a substrate, a channel layer penetrating the gate electrodes and the interlayer insulating layers, a gate dielectric layer between the gate electrodes and the channel layer, a filling insulation that fills at least a portion of an interior of the channel layer, a charge fixing layer between the channel layer and the filling insulation and including a high-k material and/or a metal, and a conductive pad connected to the channel layer and on the filling insulation. The conductive pad may be physically separated from the charge fixing layer.
    Type: Application
    Filed: March 22, 2017
    Publication date: February 22, 2018
    Inventors: Phil Ouk Nam, Hyung Joon Kim, Sung Gil Kim, Ji Hoon Choi, Seulye Kim, Hong Suk Kim, Jae Young Ahn
  • Oil cooler
    Patent number: 9897397
    Abstract: An oil cooler includes a plurality of tubes having both ends each fixed to a pair of header tanks in the length direction to form channels. The oil cooler further includes heat radiation fins, a first flange having an inlet pipe and an outlet pipe each coupled thereto in the length direction, a second flange coupled to any one of the header tanks in the length direction, and a bypass valve installed between the first flange and the second flange. The fixing bolts bolt the first flange, the bypass valve, and the second flange together while penetrating through the first flange, the bypass valve, and the second flange in the length direction.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: February 20, 2018
    Assignee: Hanon Systems
    Inventor: Ji Hoon Choi
  • VERTICAL-TYPE MEMORY DEVICE
    Publication number: 20180040628
    Abstract: A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on the substrate, the ground selection transistor including a first gate insulation portion and a first replacement gate electrode, an etch control layer on the first replacement gate electrode, and a memory cell on the etch control layer, the memory cell including a second gate insulation portion and a second replacement gate electrode. The etch control layer may include a polysilicon layer doped with carbon, N-type impurities, or P-type impurities, or may include a polysilicon oxide layer comprising carbon, N-type impurities, or P-type impurities. A thickness of the first replacement gate electrode may be the same as a thickness of the second replacement gate electrode, or the first replacement gate electrode may be thicker than the second.
    Type: Application
    Filed: March 20, 2017
    Publication date: February 8, 2018
    Inventors: Phil-ouk Nam, Sung-gil KIM, Ji-hoon CHOI, SeuI-ye KIM, Jae-young AHN, Hong-suk KIM
  • MEMORY DEVICE
    Publication number: 20180026046
    Abstract: In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At least one of the gate electrode layers has a first portion and a second portion. The second portion forms an end portion of the at least one gate electrode layer, and a bottom surface of the second portion is at a lower level than a bottom surface of the first portion. A contact plug extends from the second portion.
    Type: Application
    Filed: December 12, 2016
    Publication date: January 25, 2018
    Inventors: Phil Ouk NAM, Sung Gil KIM, Seulye KIM, Hong Suk KIM, Jae Young AHN, Ji Hoon CHOI
  • Washing machine
    Patent number: 9873973
    Abstract: Disclosed herein is a washing machine having an elastic member for providing resilient power to the door in a direction in which the door is opened and a damping member arranged to damp pivoting of the door or an inner door. The washing machine has a structure to smoothly open/shut the door and inner door combined together, and if supplementary washing is required, to smoothly open/shut only the inner door.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: January 23, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wan Gi Park, Kab Jin Jun, Ji Hoon Choi
  • Vertical-type memory device
    Patent number: 9871055
    Abstract: A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on the substrate, the ground selection transistor including a first gate insulation portion and a first replacement gate electrode, an etch control layer on the first replacement gate electrode, and a memory cell on the etch control layer, the memory cell including a second gate insulation portion and a second replacement gate electrode. The etch control layer may include a polysilicon layer doped with carbon, N-type impurities, or P-type impurities, or may include a polysilicon oxide layer comprising carbon, N-type impurities, or P-type impurities. A thickness of the first replacement gate electrode may be the same as a thickness of the second replacement gate electrode, or the first replacement gate electrode may be thicker than the second.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: January 16, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Phil-ouk Nam, Sung-gil Kim, Ji-hoon Choi, Seul-ye Kim, Jae-young Ahn, Hong-suk Kim
  • Washing machine having a plurality of concentrically formed recessed portions on the tub
    Patent number: 9863079
    Abstract: A washing machine including a washing tub to allow enhancement in washing efficiency. A washing tub of the washing machine includes a pattern having a protrusion portion to generate friction force between laundry and the washing tub and to thereby increase washing efficiency. The pattern has a concave-convex structure and performs action similar to a lifter, washing efficiency may be enhanced using tumbling generated by the pattern. A plurality of drain holes are arranged in a certain pattern in the washing tub to prevent a dehydration bottleneck phenomenon in which dehydration is concentrated at a particular drain hole and to increase a dehydration rate. The pattern is provided such that protrusion portions and recessed portions continue on the surface of the washing tub to enhance stiffness of the washing tub.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: January 9, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In Cheol Jang, Ji Sung Kim, Eun Suk Bang, Nam Ki Sul, In Ju Lee, Seong Su Jeong, Bong Wha Kwak, Doo Pil Kim, Ki Sun Park, Jong Sung Park, Ji Hoon Choi