Abstract: Novel gene deletions and translocations involving chromosome 2 resulting in fusion proteins combining part of Anaplastic Lymphoma Kinase (ALK) kinase with part of a secondary protein have now been identified in human solid tumors, e.g. non-small cell lung carcinoma (NSCLC). Secondary proteins include Echinoderm Microtubule-Associated Protein-Like 4 (EML-4) and TRK-Fusion Gene (TFG). The EML4-ALK fusion protein, which retains ALK tyrosine kinase activity, was confirmed to drive the proliferation and survival of NSCLC characterized by this mutation. The invention therefore provides, in part, isolated polynucleotides and vectors encoding the disclosed mutant polypeptides, probes for detecting it, isolated mutant polypeptides, and reagents for detecting the fusion and truncated polypeptides.

Abstract: A frequency multiplier and associated method are provided, wherein the frequency multiplier includes a waveform generator and a slicer. The waveform generator generates a waveform in response to an input signal, and the slicer induces transitions in an output signal whenever the waveform crosses each of a plurality of reference levels, such that a frequency of the output signal is a multiple of a frequency of the input signal.

Abstract: Methods, systems and devices are provided for communicating multimedia content over a service provider network. A network server may receive an audio-video stream from a content provider server, relaying the audio-video stream to a receiver device via the service provider network, receive an operating mode notification identifying a user behavior from the receiver device, and ceasing the relaying of the audio-video stream to the receiver device based on the user behavior. The network server may also alter the audio-video stream based on the received operating mode notification and send the altered audio-video stream to the receiver device via the service provider network.

Abstract: This invention relates to the cleaning of flue gas released from various combustion processes, particularly a surface deposition NH3—SCR honeycomb catalyst and its preparation method. The catalyst is composed of framework material, TiO2, V2O5 and WO3, wherein the framework material is composed of clay, coal ash, mineral waste residue or their mixture. The mass fractions for framework material, TiO2, V2O5, and WO3 are 60 wt. % to 80 wt. %, 13 wt. % to 33 wt. %, 1 wt. % to 5 wt. %, and 0.1 wt. % to 2 wt. %, respectively.

Abstract: An electrical connector (1000) includes a number of frames (10). The frame includes a dielectric holder (3) holding a number of signal contacts (23), and a ground shield (2) including a base plate (20) coupled to the dielectric holder. The ground shield includes a number of mating sections (221) extending forwardly from a front edge of the base plate and parallel to a mating portion (231) of the signal contact. A number of grounding tails (214) are separately mounted into the bottom side of the holder and aligned to the mounting portion of the signal contacts. The ground shield further includes a front tail (211) extending downwardly along the base plate, and a number of connecting legs (213) each extending sideward adjacent a bottom edge of the base plate into the holder for electrically connecting with the grounding tail.

Abstract: A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of a buried dielectric layer, wherein the buried dielectric layer is on top of a base semiconductor layer. A capacitor is present in the trench, wherein the capacitor includes a lower electrode of a metal semiconductor alloy having an upper edge that is self-aligned to the upper surface of the base semiconductor layer, a high-k dielectric node layer, and an upper electrode of a metal. The memory device further includes a pass transistor in electrical communication with the capacitor.

Abstract: Methods and apparatus for supporting targeted advertising and/or other targeted applications in set top boxes which use data and/or applications, e.g., EBIF (Enhanced TV Binary Interchange Format) applications, are described. Application level targeting is supported in which an application running on different STBs presents different application behavior and/or presents different visual sub-elements depending on the content of a subscriber profile on the particular individual STB. In the case of addressability at the Application Layer an EBIF application can target different viewers by checking private User Preference Items at runtime. Addressability at the signaling/platform level is also supported allowing targeting of a specific application or a sub-element within an application to a specific target group. In this scenario the particular applications/sub-elements are loaded on the set-tops that belong to a target group, e.g.

Abstract: A structure and method for fabricating silicide contacts for semiconductor devices is provided. Specifically, the structure and method involves utilizing chemical vapor deposition (CVD) and annealing to form silicide contacts of different shapes, selectively on regions of a semiconductor field effect transistor (FET), such as on source and drain regions. The shape of silicide contacts is a critical factor that can be manipulated to reduce contact resistance. Thus, the structure and method provide silicide contacts of different shapes with low contact resistance, wherein the silicide contacts also mitigate leakage current to enhance the utility and performance of FETs in low power applications.

Abstract: A method of forming a semiconductor device is provided that includes forming a gate structure on a channel portion of a semiconductor substrate, forming an interlevel dielectric layer over the gate structure, and forming a opening through the interlevel dielectric layer to an exposed surface of the semiconductor substrate containing at least one of the source region and the drain region. A metal semiconductor alloy contact is formed on the exposed surface of the semiconductor substrate. At least one dielectric sidewall spacer is formed on sidewalls of the opening. An interconnect is formed within the opening in direct contact with the metal semiconductor alloy contact.

Abstract: Disclosed is a PTZ video visibility detection method based on luminance characteristic, which includes acquiring a road condition video image by utilizing a PTZ video camera, extracting the region of interest ROI of the road surface to obtain high constancy of selected pixels; acquiring precise road surface region by utilizing region-growing algorism based on Nagao filtering to ensure the illuminance constancy of the selected pixels in world coordinates; in the road surface region, extracting the contrast curve which reflects the luminance variation of the road surface, and searching the feature points of the luminance curve to calculate the human eye distinguishable and maximum far pixels in the image with an extinction coefficient; calculating the maximum visibility distance in combination with camera calibration to determine the visibility value.

Abstract: A multiple-modulus divider and an associated control method are provided. The multiple-modulus divider includes a divisor loader, a multiple-modulus dividing circuit and a modulus controller. The divisor loader downloads a divisor when a download signal indicates a start of a division period. The multiple-modulus circuit includes a plurality of cascaded divisors, and provides an output frequency according to an input frequency and the divisor. The dividers respectively output a plurality of modulus output signals, and each is operable under either a close-loop state or an open-loop state. The modulus controller selects and controls one of the dividers according to the divisor, and ensures the selected divider is maintained at the open-loop state when the division period ends. The download signal corresponds to one of the modulus output signals.

Abstract: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

Abstract: Techniques disclosed herein include systems and methods for transmitting TV program related content to IP connected devices on a home network, or other local area network. Users can watch television while simultaneously receiving content related to TV programs currently being displayed on a television. TV centric and TV program related content can be transmitted to IP connected devices. Moreover, this TV program related content can be displayed at the same time as a television program is being displayed on a television. As such, the system can provide media synchronization within home network using the set-top box as a gateway for delivering the content. Users can watch TV at home, and at the same time receive TV program related content on a laptop, tablet computer, mobile phone, etc.

Abstract: The present invention provides a TSV-based oscillator WLP structure and a method for fabricating the same. The method of the present invention comprises steps: providing a silicon base having an oscillator unit disposed thereon; forming on the silicon base at least one package ring surrounding the oscillator unit; and disposing a silicon cap on the package ring to envelop the oscillator unit. The present invention adopts a cap and a base, which are made of the same material, to effectively overcome the problem of thermal stress occurring in a conventional sandwich package structure. Further, the present invention elaborately designs the wiring on the lower surface of the base to reduce the package size and decrease consumption of noble metals.

Abstract: A method of forming a semiconductor device is provided that includes forming a gate structure on a channel portion of a semiconductor substrate, forming an interlevel dielectric layer over the gate structure, and forming a opening through the interlevel dielectric layer to an exposed surface of the semiconductor substrate containing at least one of the source region and the drain region. A metal semiconductor alloy contact is formed on the exposed surface of the semiconductor substrate. At least one dielectric sidewall spacer is formed on sidewalls of the opening. An interconnect is formed within the opening in direct contact with the metal semiconductor alloy contact.

Abstract: An oscillation signal generator includes a quadrature voltage-controlled oscillator (QVCO), a phase corrector and a frequency adjusting circuit. The QVCO provides multiple oscillation signals having difference phases. The phase corrector selects one of the oscillation signals as a first oscillation signal and outputs the first oscillation signal from a first output terminal, and selects one of the oscillation signals as a second oscillation signal and outputs the second oscillation signal from a second output terminal. A phase difference between the first and second oscillation signals satisfies a predetermined relationship. The frequency adjusting circuit is coupled to the phase corrector, and generates a quadrature signal and an in-phase signal according to the oscillation signals. The frequency of the oscillation signals is a non-integral multiple of the frequencies of the quadrature and in-phase signals.

Abstract: Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. Various embodiments of forming the e-fuse structure include: forming a dummy poly gate structure to contact a surface of a silicon structure, the dummy poly gate structure extending only a part of a length of the silicon structure; and converting an unobstructed portion of the surface of the silicon structure to silicide to form a thinned strip of the silicide between two end regions.

Abstract: The invention relates to a method for the determination of the pore-mouth size distribution at the surface of porous materials. (i) While the backside of the sample is purged with a gas, the sample is immersed into a liquid wetting agent. (ii) The gas pressure is gradually decreased, and the gas flowrate is monitored; or, the gas flowrate is gradually decreased, and the gas pressure is monitored. (iii) When the gas flow stops, the remaining pressure in the system corresponds to the largest pore-mouth size. (iv) The pore-mouth size distribution can be calculated through a “dry curve” and a “wet curve”, which are curves of the gas flowrate vs. pressure at the dry and wetted states of the sample. The calculation of the pore-mouth size and the pore-mouth size distribution is the same as that based on the conventional bubble point method. The measurement of the pore-mouth size of the porous materials is of great importance when they are used as the substrates for surface coatings.

Abstract: Novel gene deletions and translocations involving chromosome 2 resulting in fusion proteins combining part of Anaplastic Lymphoma Kinase (ALK) kinase with part of a secondary protein have been identified herein in human solid tumors, e.g. non-small cell lung carcinoma (NSCLC). Secondary proteins include Echinoderm Microtubule-Associated Protein-Like 4 (EML-4) and TRK-Fusion Gene (TFG). The EML4-ALK fusion protein, which retains ALK tyrosine kinase activity, was confirmed to drive the proliferation and survival of NSCLC characterized by this mutation. The invention therefore provides, in part, isolated polynucleotides and vectors encoding the disclosed mutant ALK kinase polypeptides, probes for detecting it, isolated mutant polypeptides, recombinant polypeptides, and reagents for detecting the fusion and truncated polypeptides.

Abstract: A system for producing an image using an imaging system includes a) transmitting at least one signal of energy toward an object to be imaged by using two transmitters having the same output amplitude but of an opposite sign, or by using one transmitter to perform the task; b) exciting at least one transducer element to produce limited-diffraction array beams or their square-wave approximations with two levels of quantitations for both sine and cosine functions, c) weighting the received signals spatially with limited-diffraction array beams, their square-wave approximations, or spatial Fourier transform, and d) digitizing and then transferring received signals through high-speed optical fibers to a system for image reconstructions.