Abstract: An improved silicon building block is disclosed. In an embodiment, the silicon building block has at least two vias through it. The silicon building block is doped and the vias filled with a first material, and, optionally, selected ones of the vias filled instead with a second material. In an alternative embodiment, regions of the silicon building block have metal deposited on them.

Abstract: An inter-digital capacitor may be used in a power socket for a microelectronic device. In one embodiment an integrated, low-resistance power and ground terminal configuration is disclosed. The capacitor plates are alternatively coupled to the power and ground terminals. Two polarity types are disclosed. A method of operation is also described.

Abstract: A circuit board including a conductive plane, a first via and a second via. The first and second vias extend through the conductive plane such that there is no conductive material between the first and second vias within the conductive plane.

Abstract: An integrated circuit including a die, a power terminal and a ground terminal all mounted onto a substrate. The power terminal including a body and a first extension projecting from the body, and the ground terminal including a body and a second extension projecting from the body. The second extension on the ground terminal being adjacent to the first extension on the power terminal to offset inductance that is generated by supplying current to the die through the power terminal.

Abstract: Trace configurations for carrying high-speed digital differential signals provide for reduced conduction loss and improved signal integrity. In one embodiment, a circuit board has a first set of conductive traces disposed on nonconductive material, and a second set of conductive traces parallel to the first set and disposed within the conductive material. The second set is separated from the first set by non-conductive material. Corresponding traces of the first and second sets may be in a stacked configuration. In other embodiments, conductive material may be provided between corresponding traces of the first and second sets resulting in an “I-shaped” or “U-shaped” cross-section. In yet other embodiments, the trace configurations have “T-shaped” and “L-shaped” cross-sections.

Abstract: An inter-digital capacitor may be used in a power socket for a microelectronic device. In one embodiment an integrated, low-resistance power and ground terminal configuration is disclosed. The capacitor plates are alternatively coupled to the power and ground terminals. Two polarity types are disclosed. A method of operation is also described.

Abstract: The present invention relates to a power socket for a microelectronic device that, in one embodiment, uses a low-resistance power and ground terminal configuration. In another embodiment, a low-resistance power and ground terminal configuration is combined on the power socket with a vertically oriented interdigital capacitor that is used to lower inductance. By this combination a significantly lowered impedance is achieved during operation of the microelectronic device.