Patents by Inventor Jie Shen
Jie Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10825062Abstract: A system may include an aggregate model comprising a plurality of modules, a monitoring dashboard in communication with the aggregate model, and a search-marketing campaign manager in communication with the aggregate model, the monitoring dashboard, and a search engine entity. Additionally, the system may include a bidding interface in communication with the aggregate model and a search engine entity and/or a monitoring dashboard configured to generate model adjustment data. The search-marketing campaign manager may be configured to determine trend data, measured marketing indicators, or both, from one or more of marketing data or historical data.Type: GrantFiled: September 4, 2019Date of Patent: November 3, 2020Assignee: Capital One Services, LLCInventors: Patrick Manion, Edmond Truong, Meng Sun, Jie Shen
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Publication number: 20200327577Abstract: A system for targeted email marketing includes one or more processors, and a memory storing instructions. When executed by the one or more processors, the instructions cause the system to perform operations including: generating email templates respectively corresponding to different customer marketing communications; sending first emails to first customers, in which each of the first emails includes one of the email templates in accordance with an initial allocation; compiling response information from the first customers and updating a bandit model in accordance with the response information, the bandit model for determining an allocation of the email templates to customers; determining, by the bandit model, a revised allocation of the email templates to second emails; and sending the second emails to second customers in accordance with the revised allocation.Type: ApplicationFiled: April 11, 2019Publication date: October 15, 2020Applicant: Capital One Services, LLCInventors: Edmond Truong, Jie Shen, Phanindra Venkatesh Rao, Sunil Subrahmanyam Vasisht, Patrick James Manion, Meng Sun
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Patent number: 10792963Abstract: The filter assembly is positioned between an outwardly threaded stem of a tire valve that controls the flow of tire gas and an internally threaded stem-receiving mount on a tire gas sensor. The filter assembly includes a housing having relatively opposing first and second ends, a mount-engaging portion adjacent to said first end, a cavity open at said first end, a stem-engaging stub at the second end, and at least one port extending through the stub and into the cavity; a filter insertable in the cavity; and a retainer mountable in the cavity at the first end of the housing and having a bore extending therethrough. The stub at the second end of the housing is disposed to depress the tire valve stem and release tire gas when the filter assembly and the tire valve stem are fully threaded into the mount on the sensing device. The tire gas flows through the port in the stub, the filter, and the bore in the retainer before reaching the sensing device.Type: GrantFiled: June 12, 2017Date of Patent: October 6, 2020Assignee: DORAN MANUFACTURING LLCInventors: Jie Shen, Jeffrey Stegman, James Clifford Samocki
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Patent number: 10777664Abstract: A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions, so that portions of semiconductor strips between the isolation regions protrude higher than the isolation regions to form semiconductor fins. The method further includes recessing the semiconductor fins to form recesses, epitaxially growing a first semiconductor material from the recesses, etching the first semiconductor material, and epitaxially growing a second semiconductor material from the first semiconductor material that has been etched back.Type: GrantFiled: November 26, 2018Date of Patent: September 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tung-Husan Hung, Guan-Jie Shen, Pin-Cheng Hsu
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Publication number: 20200287010Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.Type: ApplicationFiled: May 22, 2020Publication date: September 10, 2020Inventors: Guan-Jie SHEN, Chia-Der Chang, Chih-Hsiung Lin
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Patent number: 10769508Abstract: A radio frequency yarn module includes a first flexible substrate, a radio frequency assembly, and a first packaging adhesive. The first flexible substrate is strip shaped and has a thickness ranging from 40 ?m to 60 ?m. The radio frequency assembly is disposed on the first flexible substrate and includes a first conductive layer, a second conductive layer, and a radio frequency chip. Each of the first and the second conductive layers is disposed on the first flexible substrate and has a thickness ranging from 3 ?m to 10 ?m. Extending paths of the first and the second conductive layers are respectively same as extending paths of a first and a second portions of the first flexible substrate. The radio frequency chip is disposed on the first conductive layer and the second conductive layer. The first packaging adhesive covers the radio frequency assembly.Type: GrantFiled: April 17, 2019Date of Patent: September 8, 2020Assignee: TAIWAN TEXTILE RESEARCH INSTITUTEInventors: Jie-Shen Tsai, Chien-Lung Shen
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Patent number: 10763280Abstract: A semiconductor device includes a first fin field effect transistor (FinFET) device, the first FinFET device including a plurality of fins formed in a substrate, an epitaxial layer of semiconductor material formed on the fins forming non-planar source/drain regions, and a first gate structure traversing across the plurality of fins. The semiconductor device includes a second FinFET device, the second FinFET device including a substantially planar fin formed in the substrate, an epitaxial layer of the semiconductor material formed on the substantially planar fin and forming substantially planar source/drain regions, and a second gate structure traversing across the substantially planar fin.Type: GrantFiled: May 25, 2018Date of Patent: September 1, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Chen Liu, Guan-Jie Shen, Chia-Der Chang
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Patent number: 10732685Abstract: A method of operating a multilevel power converter includes using, through a processing device, a model of an electrical circuit that includes a plurality of switching devices, a plurality of flying capacitors, and an AC terminal. The method also includes regulating a voltage level of the AC terminal through selecting, at least partially based on the model, a possible charging state of the electrical circuit. Each possible switching state has a voltage level that at least partially corresponds to a commanded voltage level for the AC terminal. The method further includes selecting, at least partially based on the model of the electrical circuit and at least partially based on the selected possible switching state, a charging state from a plurality of possible charging states. The method also includes setting the switching state of the electrical circuit at least partially based on the selected charging state of the electrical circuit.Type: GrantFiled: February 27, 2015Date of Patent: August 4, 2020Assignee: GE Energy Power Conversion Technology LimitedInventors: Zhihui Yuan, Stefan Schroeder, Qingyun Chen, Jie Shen, Nora Cheng-Huei Han
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Publication number: 20200243742Abstract: There is provided a method of selectively patterning a device structure. A hollow shadow wall is formed on a substrate. The hollow shadow wall is formed of a base lying on a surface of the substrate, and one or more side walls connected to the base. The one or more side walls extend away from the surface of the substrate and around the base to define an internal cavity of the hollow shadow wall. A device structure supported by the substrate adjacent to the shadow wall is selectively patterned by using a deposition beam to selectively deposit a layer of deposition material on the device structure. The deposition beam has a non-zero angle of incidence relative to a normal to the surface of the substrate and an orientation in the plane of the substrate's surface, such that the shadow wall prevents deposition on a surface portion of the device structure within a shadow region defined by the shadow wall.Type: ApplicationFiled: January 25, 2019Publication date: July 30, 2020Applicant: Microsoft Technology Licensing, LLCInventors: Senja Ramakers, Pavel Aseev, Amrita Singh, Jie Shen, Leonardus P. Kouwenhoven
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Publication number: 20200176329Abstract: A method of manufacturing a semiconductor device includes disposing two or more fins each having an initial fin profile on a substrate. A sacrificial oxide layer is grown on a first fin and a second fin of the two or more fins. The sacrificial oxide layer of the first and second fins is etched to trim the fin and to generate a next fin profile for the first and second fins. The growing and etching is repeated to trim the first and second fins such that the number of repetitions for the first fin and the second fin are different. Gate structures are formed over the two or more fins.Type: ApplicationFiled: November 15, 2019Publication date: June 4, 2020Inventors: Hsiao-Chun CHANG, Guan-Jie SHEN
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Publication number: 20200176584Abstract: In a method of manufacturing a semiconductor device, a fin structure having a bottom part and an upper part on the bottom part is formed over a substrate. The bottom part is trimmed so that a width of an uppermost portion of the bottom part is smaller than a width of the upper part. Bottom end corners of the upper part are trimmed to reduce a width of the upper part at a bottom of the upper part. An isolation insulating layer is formed so that the upper part protrudes from the isolation insulating layer. A dummy gate structure is formed. A source/drain structure is formed. An interlayer dielectric layer is formed over the dummy gate structure and the source/drain structure. The dummy gate structure is replaced with a metal gate structure.Type: ApplicationFiled: November 12, 2019Publication date: June 4, 2020Inventors: Jiun Shiung WU, Guan-Jie SHEN
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Patent number: 10668081Abstract: Prostamide-containing biodegradable intraocular implants, prostamide compounds, prostamide-containing pharmaceutical compositions, and methods for making and using such implants and compositions for the immediate and sustained reduction of intraocular pressure and treatment of glaucoma in an eye of a patient are described.Type: GrantFiled: February 12, 2018Date of Patent: June 2, 2020Assignee: ALLERGAN, INC.Inventors: Patrick M. Hughes, Jie Shen, Michael R. Robinson, David F. Woodward, Robert M. Burk, Hui Liu, Jinping Wan, Chandrasekar Durairaj, Gyorgy F. Ambrus, Ke Wu, Danny T. Dinh
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Publication number: 20200167617Abstract: A radio frequency yarn module includes a first flexible substrate, a radio frequency assembly, and a first packaging adhesive. The first flexible substrate is strip shaped and has a thickness ranging from 40 ?m to 60 ?m. The radio frequency assembly is disposed on the first flexible substrate and includes a first conductive layer, a second conductive layer, and a radio frequency chip. Each of the first and the second conductive layers is disposed on the first flexible substrate and has a thickness ranging from 3 ?m to 10 ?m. Extending paths of the first and the second conductive layers are respectively same as extending paths of a first and a second portions of the first flexible substrate. The radio frequency chip is disposed on the first conductive layer and the second conductive layer. The first packaging adhesive covers the radio frequency assembly.Type: ApplicationFiled: April 17, 2019Publication date: May 28, 2020Inventors: Jie-Shen TSAI, Chien-Lung SHEN
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Patent number: 10662174Abstract: Provided are a series of BTK inhibitors, and specifically disclosed are a compound, pharmaceutically acceptable salt thereof, tautomer thereof or prodrug thereof represented by formula (I), (II), (III) or (IV).Type: GrantFiled: July 14, 2017Date of Patent: May 26, 2020Assignee: HUBEI BIO-PHARMACEUTICAL INDUSTRIAL TECHNOLOGICAL INSTITUTE, INC.Inventors: Xuehai Wang, Chengde Wu, Yong Xu, Chunli Shen, Li'e Li, Guoping Hu, Yang Yue, Jian Li, Diliang Guo, Nengyang Shi, Lu Huang, Shuhui Chen, Ronghua Tu, Zhongwen Yang, Xuwen Zhang, Qiang Xiao, Hua Tian, Yanping Yu, Hailiang Chen, Wenjie Sun, Zhenyu He, Jie Shen, Jing Yang, Jing Tang, Wen Zhou, Jing Yu, Yi Zhang, Quan Liu
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Patent number: 10665686Abstract: A semiconductor device includes a fin structure, disposed on a substrate, that horizontally extends along a direction; and a gate feature comprising a gate dielectric layer and at least a first metal gate layer overlaying the gate dielectric layer, wherein the gate dielectric layer and the first metal gate layer traverse the fin structure to overlay a central portion of the fin structure and further extend along the direction to overlay at least a side portion of the fin structure that is located outside a vertical projection of a sidewall of the gate feature.Type: GrantFiled: April 8, 2019Date of Patent: May 26, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Guan-Jie Shen, Chia-Der Chang, Chih-Hsiung Lin
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Patent number: 10644609Abstract: Provided is an apparatus, including a capacitor module having a plurality of connecting terminals and a plurality of switch elements. Each switch element has at least one switch terminal coupled to a corresponding connecting terminal, wherein the switch elements are configured for mutually exclusive operation via a control device.Type: GrantFiled: November 19, 2014Date of Patent: May 5, 2020Assignee: GE Energy Power Conversion Technology, Ltd.Inventors: Fan Zhang, Richard S. Zhang, Kunlun Chen, Stefan Schroeder, Zhihui Yuan, Jie Shen
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Patent number: 10630068Abstract: A system, a switch assembly and an associated method. The system includes a number of switch assemblies, each including a switch module, isolation circuits, a detection unit, and a drive unit. The switch module includes power switch devices connected in parallel. The switch modules are connected in series. The isolation circuits each are connected in series to a gate terminal of at least one corresponding power switch device of the power switch devices. Each isolation circuit includes a capacitor or a controllable switch. The detection unit detects faults in at least one of the power switch devices. The drive unit is coupled to the switch module via the isolation circuits for driving the power switch devices of the corresponding switch module, and when the fault is detected, the drive unit is for turning on the power switch devices parallel connected to the at least one of faulty power switch devices.Type: GrantFiled: March 30, 2017Date of Patent: April 21, 2020Assignee: General Electric CompanyInventors: Zhihui Yuan, He Xu, Jie Shen, Fan Zhang, Stefan Schroeder
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Publication number: 20200090250Abstract: Systems and methods for providing improved recommendations are disclosed. In some embodiments, the systems and methods may be used for vehicle recommendations. The system may include a server system configured to receive user historical vehicle preferences, user vehicle preferences, generate weighted feature data sets, and apply a similarity model to the generated weighted feature data set in order to determine a vehicle recommendation data set. A visual representation of the vehicle recommendation data set may then be provided to an interface associated with a user.Type: ApplicationFiled: November 8, 2019Publication date: March 19, 2020Applicant: Capital One Services, LLCInventors: Jacob Anderson, Mithra Kosur Venuraju, Shilpa Mittal, Ben Hoang, Amit Deshpande, Jie Shen
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Patent number: 10585134Abstract: A drive system includes a current sensor configured to generate a first current signal representative of a current flowing in one or more electrical devices electrically coupled together through a power supply bus, a power output bus, and a common ground. The drive system also includes a voltage sensor configured to generate a first voltage signal representative of a voltage with respect to the common ground in the one or more electrical devices. The drive system further includes a ground fault detection controller configured to determine a ground fault in the one or more electrical devices based on a change in at least one of the first current signal and the first voltage signal.Type: GrantFiled: October 5, 2015Date of Patent: March 10, 2020Assignee: general electric companyInventors: Max-Josef Kell, Stefan Schroeder, Jie Shen, Zhihui Yuan, Yunzheng Chen, Mohamed Hashem
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Publication number: 20200058773Abstract: A method of fabricating a trimmed fin includes: forming a preliminary fin including silicon and germanium protruding from a substrate, in which the preliminary fin has a first germanium concentration at a top surface of the preliminary fin and a second germanium concentration at a position beneath the top surface of the preliminary fin, and the first germanium concentration is less than the second germanium concentration; oxidizing an exposed surface of the preliminary fin to form a trimmed fin covered by an oxide layer; and removing the oxide layer to obtain the trimmed fin.Type: ApplicationFiled: October 9, 2018Publication date: February 20, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Cheng SHEN, Guan-Jie SHEN