Abstract: An exemplary double-sided liquid crystal display includes a light guide plate, illuminators, a first liquid crystal panel, and a second liquid crystal panel. The light guide plate includes a first light emitting surface and a second light emitting surface. The first and second light emitting surfaces are configured for light emission. The illuminators are configured for providing light beams for the light guide plate. The first liquid crystal panel is configured for receiving the light beams from the first light emitting surface. The second liquid crystal panel is configured for receiving the light beams from the second light emitting surface. When the first liquid crystal panel is configured to display, the first liquid crystal panel is illuminated by only part of the illuminators. When the second liquid crystal panel is configured to display, the second liquid crystal panel is illuminated by all the illuminators.

Abstract: A system and method of enabling transmission control protocol (TCP) splice between a client application and a server, while maintaining control of the connections by a contest-based charging proxy. The system framework includes a TCP splicing module tor splicing connections between a client application and a server, an application proxy (e.g., content-based charging proxy) for redirecting a request of the client application, and a content-based charging engine for determining the classification of the data flow between the client application and the server. if the data flow has a predetermined classification or a triggering event has been detected, the content-based charging engine transfers control of the connections to the application proxy. The application proxy, for example, can redirect the client application to a predetermined service or source based on the classification of the data flow.

Abstract: A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: The present invention relates to a magnesium-based composite material includes at least two magnesium-based metallic layers; and at least one magnesium-based composite layer respectively sandwiched by the at least two magnesium-based metallic layers. The present invention also relates to a method for fabricating a magnesium-based composite material, the method includes the steps of: (a) providing at least two magnesium-based plates; (b) providing a plurality of nanoscale reinforcements; (c) sandwiching the nanoscale reinforcements between the at least two magnesium-based plates to form a preform; and (d) hot pressing the preform to achieve the magnesium-based composite material.

Abstract: A system and method of enabling transmission control protocol (TCP) splice between a client application and a server, while maintaining control of the connections by a content-based charging proxy. The system framework includes a TCP splicing module for splicing connections between a client application and a server, an application proxy (e.g., content-based charging proxy) for redirecting a request of the client application, and a content-based charging engine for determining the classification of the data flow between the client application and the server. If the data flow has a predetermined classification or a triggering event has been detected, the content-based charging engine transfers control of the connections to the application proxy. The application proxy, for example, can redirect the client application to a predetermined service or source based on the classification of the data flow.

Abstract: Automatic face recognition. In a first example embodiment, a method for automatic face recognition includes several acts. First, a face pattern and two eye patterns are detected. Then, the face pattern is normalized. Next, the normalized face pattern is transformed into a normalized face feature vector of Gabor feature representations. Then, a difference image vector is calculated. Next, the difference image vector is projected to a lower-dimensional intra-subject subspace extracted from a pre-collected training face database. Then, a square function is applied to each component of the projection. Next, a weighted summation of the squared projection is calculated. Then, the previous four acts are repeated for each normalized gallery image feature vector. Finally, the face pattern in the probe digital image is classified as belonging to the gallery image with the highest calculated weighted summation where the highest calculated weighted summation is above a predefined threshold.

Abstract: A method and an apparatus for obtaining an equivalent circuit model of a multi-layer circuit are disclosed. The method includes simulating the multi-layer circuit using an electromagnetic field analysis to provide a coupling network; and simplifying the coupling network using a circuit model order reduction method to generate the equivalent circuit model. The method is very simple to implement and the equivalent circuit model obtained has an apparent physical meaning.

Abstract: Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.

Abstract: Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Abstract: Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.

Abstract: A substrate processing apparatus comprises a process chamber accommodating stacked substrates; a heating unit heating an inside of the process chamber to a predetermined temperature; a gas supply unit supplying predetermined process gas to the inside of the process chamber; and an exhaust unit exhausting the inside of the process chamber. The gas supply unit comprises: a gas supply nozzle having a straight pipe shape and installed in a stacked direction of the substrates; a metal pipe supporting the gas supply nozzle; and a manifold forming a lower part of the process chamber. The metal pipe comprises: a first part extending from an outside of the process chamber to the inside of the processes chamber through the manifold; and a second part connected to the first part and extending in the stacked direction of the substrates. The gas supply nozzle is fitted to and supported by the second part.

Abstract: A voltage generating apparatus including a current source, a first voltage source, a second voltage source, a first differential pair, a second differential pair, a voltage divider and a current mirror is provided. The voltage divider is used for reducing a voltage with a negative temperature coefficient, so as to reduce the amplification ratio of the voltage with a positive temperature coefficient used for compensating the negative temperature coefficient.

Abstract: An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (34, 46) over an encapsulant (32). The conductive layer includes a combination of a conductive glue (38, 48, 52) and a metal paint (36, 50). A wire loop (30) is coupled to the conductive layer and a leadframe (10).

Abstract: The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.

Abstract: Provided is a substrate processing apparatus which is capable of suppressing the erosion of a metal member installed inside the processing chamber. The substrate processing apparatus includes: a processing chamber for performing a processing of forming a high dielectric constant film on a substrate; a processing gas supply system for supplying a processing gas into the processing chamber in order to form the high dielectric constant film; and a cleaning gas supply system for supplying a cleaning gas, which comprises a halogen-based gas except for a fluorine-based gas, into the processing chamber in order to remove materials including the high dielectric constant film deposited on the inside of the processing chamber, wherein a metal member is installed inside the processing chamber, and a DLC film is formed on at least a part of a surface of the metal member where the cleaning gas contacts.

Abstract: A voltage generating apparatus including a voltage generator and a current splitter is provided. The voltage generator has an output node, and generates a first output voltage from the output node. The first output voltage rises when the temperature rises and the current flowing from the output end of the voltage generator is fixed. And the first output voltage drops when the temperature is fixed and the current flowing from the output node of the voltage generator rises. The current splitter is used for increasing the current flowing through the current splitter when the temperature rises. Therefore, the rise of the first output voltage of the voltage generator will be restrained, and the temperature compensation can be achieved.

Abstract: A voltage generating apparatus including a current source, a first voltage source, a second voltage source, a first differential pair, a second differential pair, a voltage divider and a current mirror is provided. The voltage divider is used for reducing a voltage with a negative temperature coefficient, so as to reduce the amplification ratio of the voltage with a positive temperature coefficient used for compensating the negative temperature coefficient.

Abstract: The present invention suppresses metallic contamination in a processing chamber and a breakage of a quartz member, while suppressing decrease in film formation rate in a thin film formation process immediately after dry cleaning of the inside of the processing chamber, and enhances the operation rate of a apparatus. The method according to the invention includes the steps of: removing the thin film on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a first temperature; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a second temperature.

Abstract: A clamping fixture is provided for mounting work pieces. The clamping fixture includes a base, a supporting member, a covering member, and a positioning member. The supporting member and the positioning member are attached to the base. The work piece is clamped by the covering member and the supporting member. The positioning member is used for changing its position with respect to the base and fixedly mounted thereby for abutting against the work pieces.