Abstract: A method for informing that the network supports the mobile Internet Protocol (IP) enhancement capability includes the network sending a message indicating the mobile IP enhancement capability of the network to a mobile station (MS). If the MS supports the mobile IP enhancement capability, the MS requests the enhanced mobile IP service according to the mobile IP enhancement specifications. If the MS does not support the mobile IP enhancement capability, the MS requests the mobile IP service according to the specifications which do not support mobile IP enhancement. The packet data access gateway may be a packet data serving node (PDSN) or a controlling access point (CAP) in a Code Division Multiple Access (CDMA) evolving network. Therefore, the method provided by the present disclosure enables the MS to learn the mobile IP enhancement capability of the network without having to resending requests, thus avoiding the waste of air interface resources.

Abstract: The present invention provides compositions and methods for the following: preventing and treating heart failure; preventing heart failure in a patient with a pre-heart failure condition; treating and preventing heart failure with ischemic and non-ischemic causes; treating and preventing heart failure in a subject status post myocardial infarction; reversing damage to the heart following myocardial infarction; by administering to a subject an effective amount of an adrenergic beta-agonist either alone or in combination with an effective amount of an adrenergic beta-1 antagonist. FIG. 1 is a bar graph representing relative infarct sizes, as expressed as a percentage of left ventricular circumference.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: A substrate processing apparatus comprising: a reaction tube that processes a substrate; a support portion that supports the substrate in the reaction tube; a process gas supply line that supplies a process gas into the reaction tube; and an exhaust line that exhausts an inside of the reaction tube, wherein the process gas is supplied into the reaction tube to form a silicon nitride film on the substrate, at least the reaction tube is made of quartz, a plurality of projections are provided on the inner wall of the reaction tube, and the diameter of the projections is larger than 2 ?m but smaller than 86 ?m.

Abstract: The present invention relates to a magnesium-based composite material includes at least two magnesium-based metallic layers; and at least one magnesium-based composite layer respectively sandwiched by the at least two magnesium-based metallic layers. The present invention also relates to a method for fabricating a magnesium-based composite material, the method includes the steps of: (a) providing at least two magnesium-based plates; (b) providing a plurality of nanoscale reinforcements; (c) sandwiching the nanoscale reinforcements between the at least two magnesium-based plates to form a preform; and (d) hot pressing the preform to achieve the magnesium-based composite material.

Abstract: The invention discloses a method and system for assigning a home agent, and the method includes: indicating, by a visited network, to a home network that the visited network supports the home agent assignment; receiving, by the visited network, authorization information from the home network, the authorization information indicates the visited network is authorized for assigning the home agent; and sending, by the visited network, information about an address of the home agent to a mobile node. The invention can remedy the drawback that the home agent can be assigned to the mobile node only in the home network, thus improving the communication efficiency and reducing the delay. Further, an effective control can be enforced on assignment, so that the visited network can indicate to the home network whether it can support assigning of the home agent, and the home network can enforce a control on whether to perform assignment in the visited network.

Abstract: The present invention relates to the preparation and pharmacological use of sinomenine derivatives of formula I. The approach disclosed herein is the modification of D ring by-substituting for R. Additional substitutions in the other rings are also provided herein. Several of the sinomenine derivatives have significantly greater anti-inflammation activity when compared with the parent compound.

Abstract: A lead frame for a semiconductor device includes at least one row of contact terminals and a die pad for receiving an integrated circuit die. An isolation material is located between the contact terminals and the die pad. The isolation material electrically isolates adjacent lead fingers from each other and from the die pad. The isolation material also holds the lead fingers in place during a wire bonding operation and thus the bottom of the lead frame does not have to be taped during the assembly process, which saves taping and detaping steps from being performed. The isolation material also prevents resin bleed problems that sometimes occur when using tape. If a sawing step is performed, the saw need only cut through the isolation material instead of a metal, and thus saw blade life is improved.

Abstract: A lead frame (10) for a quad flat non-leaded semiconductor package (606), includes a tie bar (12), a first group of leads (22) extending a first length from the tie bar (12) in a transverse direction (Y), and a second group of leads (24) extending a second length from the tie bar (12) in the transverse direction (Y). The second length is greater than the first length, and leads from the first and second group of leads (22, 24) alternate in a longitudinal direction (X) along the tie bar (12) so that the first and second groups of leads are staggered. The second group of leads (24) is displaced from the first group of leads (22) in a Z-direction (Z) perpendicular to both the transverse (Y) and longitudinal (X) directions. The leads of the first and second groups of leads (22, 24) each have a respective contact terminal (26 and 28) at their distal ends. The contact terminals (26 and 28) each have a contact face (40 and 42) in a contact plane (44).

Abstract: A method for managing dynamic program changes in a digital video broadcasting (DVB) system, the method including detecting a dynamic program change in a DVB transmission received at a set-top box (STB), and changing a digital video recorder (DVR) recording instruction associated with the program to record the program in accordance with a parameter of the change.

Abstract: The present invention provides isolated nucleic acids encoding delta DNA methyltransferase 3B molecules that are involved in the treatment and prevention of cancers such as, but not limited to, lung cancer. The delta DNA methyltransferase 3B molecules of the present invention are found to play a critical role in promoter-specific methylation of tumor suppressor genes. The DNA methyltransferase 3B molecules of the present invention are provided as therapeutic targets for identifying inhibitors of DNA methyltransferase. Such inhibitors are contemplated for the treatment and/or prevention of cancers. In particular embodiments, the present invention involves the treatment and prevention of a non-small cell lung cancer.

Abstract: An exemplary double-sided liquid crystal display includes a light guide plate, illuminators, a first liquid crystal panel, and a second liquid crystal panel. The light guide plate includes a first light emitting surface and a second light emitting surface. The first and second light emitting surfaces are configured for light emission. The illuminators are configured for providing light beams for the light guide plate. The first liquid crystal panel is configured for receiving the light beams from the first light emitting surface. The second liquid crystal panel is configured for receiving the light beams from the second light emitting surface. When the first liquid crystal panel is configured to display, the first liquid crystal panel is illuminated by only part of the illuminators. When the second liquid crystal panel is configured to display, the second liquid crystal panel is illuminated by all the illuminators.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: A system and method of enabling transmission control protocol (TCP) splice between a client application and a server, while maintaining control of the connections by a content-based charging proxy. The system framework includes a TCP splicing module for splicing connections between a client application and a server, an application proxy (e.g., content-based charging proxy) for redirecting a request of the client application, and a content-based charging engine for determining the classification of the data flow between the client application and the server. If the data flow has a predetermined classification or a triggering event has been detected, the content-based charging engine transfers control of the connections to the application proxy. The application proxy, for example, can redirect the client application to a predetermined service or source based on the classification of the data flow.

Abstract: To provide a manufacturing method of a semiconductor device, comprising: loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber; heating an inside of said processing chamber; performing pre-processing of supplying at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface, and growing an epitaxial film on said silicon surface; and supplying gas containing at least silicon into said processing chamber after said pre-processing, and further growing the epitaxial film on said epitaxial film.

Abstract: The present invention provides a color filter structure and a forming the same method. The structure comprises a transparent substrate, a black matrix and a plurality of color regions separated by the black matrix. The black matrix grid is formed by a plurality of horizontal black matrix strips crossing a plurality of vertical black matrix strips. These color regions are formed by red, green or blue color resin forming in corresponding matrix grids. In each matrix grid, the resin is positioned to cover a larger area on an adjacent vertical black matrix strip than to cover an area of the other adjacent vertical black matrix strip. The structure can prevent the problem of corner image sticking in a frame of the liquid crystal display device.

Abstract: An optical interleaver comprising a first optical 3×3 coupler for receiving a broadband optical signal at one input port thereof, a second 3×3 optical coupler, three differential delay lines connected in parallel port-to-port between output ports of the first optical 3×3 coupler and input ports of the second optical 3×3 coupler, an infinite impulse response (IIR) element disposed in each of two of the delay lines, and wherein optical signals travelling in the respective delay lines interfere at the second 3×3 coupler to produce three frequency shifted transmission channel output signals at respective output ports of the second 3×3 coupler.

Abstract: The present invention discloses a method for implementing access restriction of mobile networks. The method includes the following steps: a Mobile Station (MS) inquiring a list of forbidden Public Land Mobile Networks (PLMNs) and access technology identifiers, which is saved by itself, when selecting a PLMN network; the MS determining whether the selected PLMN network and the access technology exist in the list of forbidden PLMNs and access technology identifiers, if they exist, the MS will not send a Location Updating Request to a Mobile Switching Center/Serving GPRS Support Node (MSC/SGSN); otherwise, the MS will send the Location Updating Request to the MSC/SGSN in order to access to the network. The present invention makes it possible to implement the access restrictions upon different types of access networks using different restriction rules.

Abstract: Disclosed is a producing method of a semiconductor device comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed, and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Abstract: A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer. The first type doped semiconductor layer is disposed on the epitaxy substrate, while the light-emitting layer is disposed between the first type and second type doped semiconductor layers. The first bonding pad is disposed in the through hole and electrically connected to the first type doped semiconductor layer, while the second bonding pad is disposed on the second type doped semiconductor layer.