Patents by Inventor Jiong Chen
Jiong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8993979Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: GrantFiled: February 26, 2014Date of Patent: March 31, 2015Assignee: Advanced Ion Beam Technology, Inc.Inventor: Jiong Chen
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Publication number: 20140366936Abstract: A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.Type: ApplicationFiled: June 17, 2013Publication date: December 18, 2014Inventors: Jiong Chen, Junhua Hong
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Publication number: 20140261181Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: ApplicationFiled: February 26, 2014Publication date: September 18, 2014Applicant: Advanced Ion Beam Technology, Inc.Inventor: Jiong CHEN
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Patent number: 8680480Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: GrantFiled: May 7, 2013Date of Patent: March 25, 2014Assignee: Advanced Ion Beam Technology, Inc.Inventor: Jiong Chen
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Publication number: 20140068479Abstract: Embodiments of the present invention relate to a key display updating method and a wireless handheld device. The method includes: counting click times of each key on a virtual keyboard; obtaining a display manner corresponding to the counted click times of each key based on correspondence between click times of keys and display manners; and displaying each key according to the display manner corresponding to the click times of each key. The embodiments of the present invention improve, for a wireless handheld device, the flexibility for displaying keys of a virtual keyboard and the efficiency for obtaining information input through the keys of the virtual keyboard.Type: ApplicationFiled: November 13, 2013Publication date: March 6, 2014Applicant: HUAWEI DEVICE CO., LTD.Inventors: Jiong CHEN, Yongsheng Zhu
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Patent number: 8570976Abstract: A method and system for fast handover in hierarchical mobile IPv6 includes: a mobile node which transmits a proxy route request message to a previous access router of the mobile node according to a handover expectation provided by the link layer, the previous access router transmits a network prefix information of a new access router of the mobile node to the mobile node; the mobile node which generates new care-of address according to the network prefix information; after the mobile node moves to a target network, an optimistic duplicate address detection is performed on the care-of address. The disclosure can simplify the handover procedure of hierarchical mobile IPV6 of the mobile node, reduce the signaling interaction in handover process, and shorten handover delay.Type: GrantFiled: August 25, 2008Date of Patent: October 29, 2013Assignee: Huawei Technologies Co., Ltd.Inventors: Xuezeng Pan, Jun Guan, Lingdi Ping, Jiong Chen, Defeng Li
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Publication number: 20130251121Abstract: The present invention provides a method and an apparatus for converting text information. The method includes: receiving, by a first terminal, a call or data from a second terminal; obtaining, by the first terminal, according to a mapping relationship between identification information of the second terminal and voice characteristic parameters of an user of the second terminal, the voice characteristic parameters of the user of the second terminal corresponding to the identification information of the second terminal when the first terminal is in a working mode of text-to-voice conversion; and converting, by the first terminal, related text information about the call or data to audio information with the voice characteristic parameters of the user of the second terminal.Type: ApplicationFiled: May 17, 2013Publication date: September 26, 2013Applicant: Huawei Device Co., LTDInventors: Jiong Chen, Xiaohai Zhang
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Publication number: 20130239892Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: ApplicationFiled: May 7, 2013Publication date: September 19, 2013Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventor: Jiong CHEN
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Patent number: 8502160Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: GrantFiled: November 30, 2010Date of Patent: August 6, 2013Assignee: Advanced Ion Beam Technology, Inc.Inventor: Jiong Chen
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Patent number: 8354654Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is built in.Type: GrantFiled: March 18, 2010Date of Patent: January 15, 2013Assignee: Kingstone Semiconductor CompanyInventor: Jiong Chen
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Patent number: 8044375Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.Type: GrantFiled: March 18, 2010Date of Patent: October 25, 2011Assignee: Kingstone Semiconductor Company, LimitedInventor: Jiong Chen
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Patent number: 8039821Abstract: An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.Type: GrantFiled: March 18, 2010Date of Patent: October 18, 2011Assignee: Kingstone Semiconductor Company, LimitedInventor: Jiong Chen
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Publication number: 20110068277Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: ApplicationFiled: November 30, 2010Publication date: March 24, 2011Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventor: Jiong CHEN
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Patent number: 7902527Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.Type: GrantFiled: August 19, 2008Date of Patent: March 8, 2011Inventors: Jiong Chen, Nicholas R. White
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Patent number: 7851767Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.Type: GrantFiled: March 21, 2008Date of Patent: December 14, 2010Assignee: Advanced Ion Beam Technology, Inc.Inventor: Jiong Chen
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Publication number: 20100237232Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is built in.Type: ApplicationFiled: March 18, 2010Publication date: September 23, 2010Inventor: Jiong Chen
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Publication number: 20100237231Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.Type: ApplicationFiled: March 18, 2010Publication date: September 23, 2010Inventor: Jiong Chen
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Publication number: 20100237260Abstract: An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.Type: ApplicationFiled: March 18, 2010Publication date: September 23, 2010Inventor: Jiong Chen
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Patent number: 7772571Abstract: To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.Type: GrantFiled: October 8, 2007Date of Patent: August 10, 2010Assignee: Advanced Ion Beam Technology, Inc.Inventors: Cheng-Hui Shen, Donald Wayne Berrian, Jiong Chen
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Patent number: 7687784Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.Type: GrantFiled: May 23, 2008Date of Patent: March 30, 2010Assignees: Advanced Ion Beam Technology, Inc., Advanced Ion Beam Technology, Inc.Inventors: Nai-Yuan Cheng, Yun-Ju Yang, Cheng-Hui Shen, Junhua Hong, Jiong Chen, Tienyu Sheng, Linuan Chen